Optical microelectromechantical structure

Abstract

The invention relates to an optical microelectromechanical structure (MEMS) comprising—an (at least one) optically transmissive layer (UTL)—an (at least one) intermediate layer structure (IL)—a (at least one) device layer (DL) said intermediate layer structure (IL) defining one or more optical paths (OP) between said substantially optically transmissive layer (UTL) and said device layer (DL), said intermediate structure layer (IL) defining the distance (d) between said optically transmissive layer (UTL) and said device layer (DL).

1. An optical microelectromechanical structure (MEMS) comprising:
 (i) at least one optically transmissive layer (UTL); 
 (ii) at least one intermediate layer structure (IL); 
 (iii) at least one device layer (DL); 
 (iv) a base layer (BL); and 
 (v) a sealed package 
 
     wherein the intermediate layer structure (IL) facilitates one or more optical paths (OP) between the optically transmissive layer (UTL) and base layer and wherein the intermediate structure layer (IL) defines a distance (d) between the optically transmissive layer (UTL) and the device layer (DL) within a range of 10-1000 micrometers and wherein the optical paths (OP) for guiding light through the base layer are partly defined by a plurality of holes in a masking deposited on the base layer (BL). 
   
   
     2. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the intermediate layer structure (IL) comprises at least one electrically insulating layer having a thickness in the range 0.1-3 micrometers. 
   
   
     3. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the intermediate layer structure (IL) comprises a plurality of sub-layers. 
   
   
     4. The optical microelectromechanical structure (MEMS) according to  claim 3 , wherein at least one of the sub-layers comprises an electrically insulating layer. 
   
   
     5. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the intermediate layer structure (IL) comprises one unitary layer structure. 
   
   
     6. The optical microelectromechanical structure (MEMS) according to  claim 5 , wherein the unitary layer structure comprises a plate structure having at least one opening means forming part of the one or more optical paths (OP). 
   
   
     7. The optical microelectromechanical structure (MEMS) according to  claim 6 , wherein the at least one opening means comprises one opening forming part of the optical paths (OP). 
   
   
     8. The optical microelectromechanical structure (MEMS) according to  claim 6 , wherein the at least one opening means comprises a plurality of apertures (AP). 
   
   
     9. The optical microelectromechanical structure (MEMS) according to  claim 6 , wherein the at least one opening means comprises a plurality of apertures (AP) each forming part of one individual optical path (OP). 
   
   
     10. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the intermediate layer structure (IL) comprises a plurality of layer structures. 
   
   
     11. The optical microelectromechanical structure (MEMS) according to  claim 10 , wherein the plurality of layer structures comprise columns. 
   
   
     12. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the device layer (DL) is attached to the base layer (BL). 
   
   
     13. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the extent of the shortest individual optical paths (OP) between the optically transmissive layer (UTL) and the device layer (DL) equals the thickness of the intermediate layer structure (IL). 
   
   
     14. The optical microelectromechanical structure (MEMS) according to  claim 12 , wherein the extent of the said shortest individual optical paths (OP) between the optically transmissive layer (UTL) and the base layer (BL) equals the thickness of the combined intermediate layer structure (IL) and the device layer (DL) in combination. 
   
   
     15. The optical microelectromechanical structure (MEMS) according to  claim 12 , wherein the base layer (BL) is optically transmissive. 
   
   
     16. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the device layer (DL) comprises movable parts of actuators. 
   
   
     17. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the intermediate layer structure (IL) comprises a handle layer and an insulating layer of a SOI wafer. 
   
   
     18. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the optically transmissive layer (UTL) comprises micro lenses. 
   
   
     19. The optical microelectromechanical structure (MEMS) according to  claim 12 , wherein the base layer (BL) comprises micro lenses. 
   
   
     20. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the optically transmissive layer, intermediate layer structure, device layer and base layer are mutually joined. 
   
   
     21. The optical microelectrochemical structure (MEMS) according to  claim 1 , wherein the optically transmissive layer, intermediate layer structure and device layer are plane layers. 
   
   
     22. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the intermediate layer structure (IL) comprises silicon oxide, silica, quartz, glass, aluminum, sapphire, silicon, nickel, PMMA and/or combinations thereof 
   
   
     23. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the optically transmissive layer (UTL) comprises Pyrex glass, quartz, silica, aluminum, sapphire, silicon, PMMA and/or combinations thereof. 
   
   
     24. The optical microelectromechanical structure (MEMS) according to  claim 1 , wherein the device layer (DL) comprises silicon of any doping or nickel. 
   
   
     25. The optical microelectromechanical structure (MEMS) according to  claim 3 , wherein the electrically insulating layer comprises silica, quartz, glass, aluminum, sapphire, silicon nitride, PMMA and/or combinations thereof. 
   
   
     26. The optical microelectromechanical structure (MEMS) according to  claim 1 , further comprising at least one light modulator arrangement and electrical connections, wherein the light modulator arrangement includes at least one movable microshutter having at least one open and at least one closed position and wherein the at least one optical path guides light through the optical MEMS structure via the at least one light modulator arrangement, and wherein the electrical connections are adapted for transmission of electrical control signal to and optionally from the at least one light modulator arrangement. 
   
   
     27. The optical microelectromechanical structure (MEMS) according to  claim 26 , wherein light transmitted in the at least one optical path (OP) is focused in or in the vicinity of a shutter plane of the light modulator arrangement. 
   
   
     28. A method of manufacturing an optical microelectromechanical structure (MEMS) by bonding at least one optically transmissive layer with at least one intermediate layer structure (IL), at least one device layer (DL), and a base layer (BL) to form a sealed package, whereby optical transmission is facilitated between the optically transmissive layer (UTL) and the base layer by a plurality of holes in a masking deposited on the base layer (BL) and whereby the distance between the transmissive layer (UTL) and the device layer (DL) is defined by the thickness of the intermediate layer structure within a range of 10-1000 micrometers. 
   
   
     29. The method according to  claim 28 , whereby structural parts of the MEMS are formed by etching the device layer (DL). 
   
   
     30. The method according to  claim 29 , whereby the intermediate layer structure (IL) further comprises at least one electrically insulating layer having a thickness in the range of 0.1-3 micrometers and whereby a lossless transmission of light is facilitated between the optically transmissive layer and device layer (DL) by removal of at least a part of the intermediate layer structure (IL). 
   
   
     31. The method according to  claim 30 , whereby the removal is performed by etching of the intermediate layer structure (IL). 
   
   
     32. The method according to  claim 28 , whereby the optically transmissive layer, intermediate structure layer, device layer and base layer are mutually joined.