Photoelectric conversion device and manufacturing method of the same, and a semiconductor device

Abstract

A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.

1. A photoelectric conversion device comprising:
 a first electrode over a substrate; 
 a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film; 
 an insulating film covering the first electrode and the photoelectric conversion layer; 
 a second electrode over the insulating film, and in contact with a part of the firstelectrode; and 
 a third electrode over the insulating film, and in contact with a part of the third semiconductor film, 
 wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, and 
 wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. 
 
   
   
     2. The photoelectric conversion device according to  claim 1 , wherein the first electrode is a transparent electrode. 
   
   
     3. The photoelectric conversion device according to  claim 2 , wherein the transparent electrode comprises any of an indium oxide-tin oxide alloy containing silicon, zinc oxide, tin oxide, indium oxide, or an indium oxide-zinc oxide alloy formed by using a target in which indium oxide is mixed with 2 wt % or more to 20 wt % or less of zinc oxide. 
   
   
     4. The photoelectric conversion device according to  claim 1 , wherein the substrate is a flexible substrate. 
   
   
     5. The photoelectric conversion device according to  claim 4 , wherein the flexible substrate comprises a film selected from the group consisting of a polyethylenenaphthalate (PEN) film, a polyethylene terephthalate (PET) film, and a polybutylene naphthalate (PBN) film. 
   
   
     6. A photoelectric conversion device comprising:
 a first electrode over a substrate; 
 a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film; 
 an insulating film covering the first electrode and the photoelectric conversion layer; 
 a second electrode over the insulating film, and in contact with a part of the first electrode; and 
 a third electrode over the insulating film, and in contact with a part of the third semiconductor film, 
 wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, 
 wherein a width of the photoelectric conversion layer is larger than a width of the part of the first electrode, and 
 wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. 
 
   
   
     7. The photoelectric conversion device according to  claim 6 , wherein the first electrode is a transparent electrode. 
   
   
     8. The photoelectric conversion device according to  claim 7 , wherein the transparent electrode comprises any of an indium oxide-tin oxide alloy containing silicon, zinc oxide, tin oxide, indium oxide, or an indium oxide-zinc oxide alloy formed by using a target in which indium oxide is mixed with 2 wt % or more to 20 wt % or less of zinc oxide. 
   
   
     9. The photoelectric conversion device according to  claim 6 , wherein the substrate is a flexible substrate. 
   
   
     10. The photoelectric conversion device according to  claim 9 , wherein the flexible substrate comprises a film selected from the group consisting of a polyethylenenaphthalate (PEN) film, a polyethylene terephthalate (PET) film, and a polybutylene naphthalate (PBN) film. 
   
   
     11. A photoelectric conversion device comprising:
 a first electrode over a substrate; 
 a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film; 
 an insulating film covering the first electrode and the photoelectric conversion layer; 
 a second electrode over the insulating film, and in contact with a part of the first electrode; and 
 a third electrode over the insulating film, and in contact with a part of the third semiconductor film, 
 wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, 
 wherein a width of the photoelectric conversion layer is larger than a width of the part of  the third semiconductor film, and 
 wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. 
 
   
   
     12. The photoelectric conversion device according to  claim 11 , wherein the first electrode is a transparent electrode. 
   
   
     13. The photoelectric conversion device according to  claim 12 , wherein the transparent electrode comprises any of an indium oxide-tin oxide alloy containing silicon, zinc oxide, tin oxide, indium oxide, or an indium oxide-zinc oxide alloy formed by using a target in which indium oxide is mixed with 2 wt % or more to 20 wt % or less of zinc oxide. 
   
   
     14. The photoelectric conversion device according to  claim 11 , wherein the substrate is a flexible substrate. 
   
   
     15. The photoelectric conversion device according to  claim 14 , wherein the flexible substrate comprises a film selected from the group consisting of a polyethylenenaphthalate (PEN) film, a polyethylene terephthalate (PET) film, and a polybutylene naphthalate (PBN) film. 
   
   
     16. A photoelectric conversion device comprising:
 a first electrode over a substrate; 
 a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film over the first electrode; 
 an insulating film covering the first electrode and the photoelectric conversion layer; 
 a second electrode over the insulating film, and in contact with a part of the first electrode; and 
 a third electrode over the insulating film, and in contact with a part of the third semiconductor film, 
 wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, 
 wherein the third electrode does not overlap with the first electrode through the photoelectric conversion layer between the first electrode and the third electrode, and 
 wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. 
 
   
   
     17. The photoelectric conversion device according to  claim 16 , wherein the first electrode is a transparent electrode. 
   
   
     18. The photoelectric conversion device according to  claim 17 , wherein the transparent electrode comprises any of an indium oxide-tin oxide alloy containing silicon, zinc oxide, tin oxide, indium oxide, or an indium oxide-zinc oxide alloy formed by using a target in which indium oxide is mixed with 2 wt % or more to 20 wt % or less of zinc oxide. 
   
   
     19. The photoelectric conversion device according to  claim 16 , wherein the substrate is a flexible substrate. 
   
   
     20. The photoelectric conversion device according to  claim 19 , wherein the flexible substrate comprises a film selected from the group consisting of a polyethylenenaphthalate (PEN) film, a polyethylene terephthalate (PET) film, and a polybutyle nenaphthalate (PBN) film. 
   
   
     21. A photoelectric conversion device comprising:
 a first electrode over an insulating surface; 
 a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film over the first electrode; 
 an insulating film covering the first electrode and the photoelectric conversion layer; 
 a second electrode over the insulating film, and in contact with a part of the first electrode; and 
 a third electrode over the insulating film, and in contact with a part of the third semiconductor film, 
 wherein the photoelectric conversion layer overlaps and contacts with a part of the first  electrode, 
 wherein the photoelectric conversion layer is in contact with the insulating surface, and 
 wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. 
 
   
   
     22. The photoelectric conversion device according to  claim 21 , wherein the first electrode is a transparent electrode. 
   
   
     23. The photoelectric conversion device according to  claim 22 , wherein the transparent electrode comprises any of an indium oxide-tin oxide alloy containing silicon, zinc oxide, tin oxide, indium oxide, or an indium oxide-zinc oxide alloy formed by using a target in which indium oxide is mixed with 2 wt % or more to 20 wt % or less of zinc oxide.