GaN based digital controlled broadband MMIC power amplifier

Abstract

A power amplifier comprises a distributed pre-driver, digital signal adjuster, a distributed high power amplifier; and an integrated coupler-detector unit. The distributed pre-driver, the digital signal adjuster, the distributed high power amplifier and the integrated coupler-detector unit are formed at an interface of a Gallium Nitride layer and an Aluminum Gallium Nitride layer of a monolithic microwave integrated circuit device.

1. A power amplifier comprising:
 a distributed pre-driver; 
 digital signal adjuster; 
 a distributed high power amplifier; and 
 an integrated coupler-detector unit, 
 wherein said distributed pre-driver, said digital signal adjuster, said distributed high power amplifier and said integrated coupler-detector unit are formed at an interface of a Gallium Nitride layer and an Aluminum Gallium Nitride layer of a monolithic microwave integrated circuit device. 
 
   
   
     2. The power amplifier of  claim 1 , further comprising a GaN based 1×N switch. 
   
   
     3. The power amplifier of  claim 1 , wherein the distributed pre-driver is a digitally controlled broadband pre-driver. 
   
   
     4. The power amplifier of  claim 1 , wherein said digital signal adjuster is a digital variable attenuator. 
   
   
     5. The power amplifier of  claim 1 , wherein said digital signal adjuster is configured to adjust a signal level for an input signal based on a digital level control input. 
   
   
     6. The power amplifier of  claim 1 , wherein said digital signal adjuster comprises at least one GaN switching FET device. 
   
   
     7. The power amplifier of  claim 1 , wherein said distributed high power amplifier comprises a coupler. 
   
   
     8. The power amplifier of  claim 7 , wherein said coupler is positioned in closest proximity to a power output of said distributed high power amplifier. 
   
   
     9. The power amplifier of  claim 1 , wherein said integrated coupler-detector unit comprises a coupler portion configured to detect an output level via a capacitor formed between said coupler portion and a conductor disposed in parallel with an output line formed in a region of said interface of said Gallium Nitride layer and said Aluminum Gallium Nitride layer. 
   
   
     10. The power amplifier of  claim 9 , wherein said coupler portion utilizes a plurality wires to provide cross-over connections or an air-bridge fabrication processing to bridge strip conductors. 
   
   
     11. The power amplifier of  claim 1 , wherein said integrated coupler-detector unit comprises a detector portion configured to detect an output of said power amplifier. 
   
   
     12. The power amplifier of  claim 1 , wherein said integrated coupler-detector unit form a feedback control loop. 
   
   
     13. The power amplifier of  claim 12 , wherein said feedback control loop is configured to provide a voltage reference to said distributed pre-driver. 
   
   
     14. A method comprising:
 digitally pre-driving an input signal received by a power amplifier; 
 digitally attenuating said input signal; 
 amplifying said input signal via a distributed high power amplifier; and 
 providing integrated coupling and detecting of said amplified input signal via an integrated coupler-detector unit, 
 wherein said power amplifier is a monolithic microwave integrated circuit device formed at an interface of a Gallium Nitride layer and an Aluminum Gallium Nitride layer of said monolithic microwave integrated circuit device. 
 
   
   
     15. The amplifier of  claim 14 , wherein said digitally attenuating said input signal is provided by a digital variable attenuator. 
   
   
     16. The amplifier of  claim 14 , wherein said digitally attenuating said input signal comprises adjusting a signal level for an input signal based on a digital level control input. 
   
   
     17. The method of  claim 14 , wherein said providing integrated coupling and detecting of said amplified input signal via an integrated coupler-detector unit comprises forming a feedback control loop. 
   
   
     18. The method of  claim 17 , wherein said forming said feedback control loop further comprises providing a voltage reference prior to said digitally pre-driving an input signal received by a power amplifier. 
   
   
     19. The method of  claim 14 , further comprising providing GaN based lxN switching. 
   
   
     20. A system comprising:
 circuitry for digitally pre-driving an input signal received by a power amplifier; 
 circuitry for digitally attenuating said input signal; 
 circuitry for amplifying said input signal via a distributed high power amplifier; and 
 circuitry for providing integrated coupling and detecting of said amplified input signal via an integrated coupler-detector unit, 
 wherein said power amplifier is a monolithic microwave integrated circuit device formed at an interface of a Gallium Nitride layer and an Aluminum Gallium Nitride layer of said monolithic microwave integrated circuit device.