P
US7525124B2ExpiredUtilityPatentIndex 60

Submount for light emitting diode and its manufacturing method

Assignee: HITACHI KYOWA ENG CO LTDPriority: Sep 14, 2004Filed: Sep 9, 2005Granted: Apr 28, 2009
Est. expirySep 14, 2024(expired)· nominal 20-yr term from priority
Inventors:TAKEMORI HIDEAKIHIGASHIYAMA SATOSHIMORI KENJITOHMON RYOICHIHIROSE MINORUKAWAGUCHI HIROAKI
H10W 72/07251H10W 72/20H10H 20/8581H10H 20/851H10H 20/8506H10H 20/857H10H 20/856
60
PatentIndex Score
4
Cited by
15
References
3
Claims

Abstract

A submount for a light emitting diode and its manufacturing method, the submount including a reflector and having a compact size. The submount for the light emitting diode comprises a Si base substrate having input/output terminals formed on a front side thereof, and a Si reflector having a sloped through hole and a reflecting film formed at least on a slope defining the through hole. The Si reflector is mounted on the Si base substrate and is fixedly joined to the Si base substrate. The Si reflector and the Si base substrate are joined to each other by a thin film solder.

Claims

exact text as granted — not AI-modified
1. A submount for a light emitting diode, the submount comprising:
 a Si base substrate having input/output terminals formed on a front side thereof; and 
 a Si reflector having a sloped through hole and a reflecting film formed at least on a slope defining the through hole, 
 wherein said Si reflector is mounted on said Si base substrate and fixedly joined to said Si base substrate; and 
 wherein said reflecting film is an Al thin film. 
 
   
   
     2. The submount for the light emitting diode according to  claim 1 , wherein said Si base substrate has input/output pads formed on a backside thereof, and
 said input/output terminals and said input/output pads are electrically connected to each other with metalization made on the through hole formed in said Si base substrate. 
 
   
   
     3. The submount for the light emitting diode according to  claim 1 , wherein said Si reflector and said Si base substrate are joined to each other by a thin film solder.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.