Methods of forming a plurality of capacitors

Abstract

The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor electrode openings are bounded on a first pair of opposing sides by a first capacitor electrode-forming material at one elevation and on a second pair of opposing sides by a different second capacitor electrode-forming material at the one elevation. Individual capacitor electrodes are formed within individual of the capacitor electrode openings. The capacitor electrodes are incorporated into a plurality of capacitors. Other aspects and implementations are contemplated.

The invention claimed is: 
     
       1. A method of forming a plurality of capacitors, comprising:
 forming a plurality of capacitor electrode openings over a semiconductor substrate, individual of the capacitor electrode openings being bounded on a first pair of opposing sides by a first capacitor electrode-forming material at one elevation and on a second pair of opposing sides by a different second capacitor electrode-forming material at the one elevation, the first and second capacitor electrode-forming materials comprising respective thicknesses which overlap one another across the one elevation, one of the first and second capacitor electrode-forming materials being insulative and the other of the first and second capacitor electrode-forming materials being conductive; 
 forming individual capacitor electrodes within individual of the capacitor electrode openings; and 
 incorporating the capacitor electrodes into a plurality of capacitors. 
 
     
     
       2. The method of  claim 1  wherein the individual capacitor electrodes are supported at least in part by at least one of the first and second capacitor electrode-forming materials in a finished circuitry construction incorporating the plurality of capacitors. 
     
     
       3. The method of  claim 2  wherein the individual capacitor electrodes are supported at least in part by only one of the first and second capacitor electrode-forming materials in the finished circuitry construction. 
     
     
       4. The method of  claim 2  wherein the individual capacitor electrodes are supported at least in part by both of the first and second capacitor electrode-forming materials in the finished circuitry construction. 
     
     
       5. The method of  claim 1  wherein the individual capacitor electrodes are not supported by any of the first and second capacitor electrode-forming materials in a finished circuitry construction incorporating the plurality of capacitors. 
     
     
       6. A method of forming a plurality of capacitors, comprising:
 forming a plurality of capacitor electrode openings over a semiconductor substrate, individual of the capacitor electrode openings being bounded on a first pair of opposing sides by a first capacitor electrode-forming material at one elevation and on a second pair of opposing sides by a different second capacitor electrode-forming material at the one elevation, the first and second capacitor electrode-forming materials comprising respective thicknesses which overlap one another across the one elevation; 
 forming individual capacitor electrodes within individual of the capacitor electrode openings; 
 providing a retaining structure at another elevation supportive of a plurality of the individual capacitor electrodes, the retaining structure comprising material different from both of the first and second capacitor electrode-forming materials; and 
 incorporating the capacitor electrodes into a plurality of capacitors. 
 
     
     
       7. The method of  claim 6  wherein the retaining structure is provided prior to forming the capacitor electrodes within the capacitor electrode openings. 
     
     
       8. The method of  claim 7  wherein the retaining structure is provided prior to forming the plurality of capacitor electrode openings. 
     
     
       9. The method of  claim 6  comprising providing a plurality of the retaining structures at different elevations from the one elevation. 
     
     
       10. The method of  claim 6  wherein the retaining structure is insulative and comprises a part of a finished circuitry construction incorporating the plurality of capacitors. 
     
     
       11. The method of  claim 6  wherein no portion of the retaining structure comprises a part of a finished circuitry construction incorporating the plurality of capacitors. 
     
     
       12. The method of  claim 6  wherein the retaining structure comprises a lattice. 
     
     
       13. A method of forming a plurality of capacitors, comprising:
 forming a plurality of capacitor electrode openings over a semiconductor substrate, individual of the capacitor electrode openings being bounded on a first pair of opposing sides by a first capacitor electrode-forming material at one elevation and on a second pair of opposing sides by a different second capacitor electrode-forming material at the one elevation; 
 forming individual capacitor electrodes within individual of the capacitor electrode openings; 
 providing a retaining structure comprising a lattice at another elevation supportive of a plurality of the individual capacitor electrodes, the retaining structure comprising material different from both of the first and second capacitor electrode-forming materials, wherein cross pieces of the lattice intersect one another at about 90°; and 
 incorporating the capacitor electrodes into a plurality of capacitors. 
 
     
     
       14. A method of forming a plurality of capacitors, comprising:
 forming a plurality of capacitor electrode openings over a semiconductor substrate, individual of the capacitor electrode openings being bounded on a first pair of opposing sides by a first capacitor electrode-forming material at one elevation and on a second pair of opposing sides by a different second capacitor electrode-forming material at the one elevation, the first and second capacitor electrode-forming materials comprising respective thicknesses which overlap one another across the one elevation; 
 forming individual capacitor electrodes within individual of the capacitor electrode openings; 
 providing a retaining structure at another elevation supportive of a plurality of the individual capacitor electrodes, the retaining structure comprising material different from both of the first and second capacitor electrode-forming materials; 
 after forming the capacitor electrodes, removing at least some of at least one of the first and second capacitor electrode-forming materials to expose opposing outer lateral sidewall surface portions of the capacitor electrodes; and 
 incorporating the capacitor electrodes into a plurality of capacitors. 
 
     
     
       15. The method of  claim 14  wherein the removing is of all of at least one of the first and second capacitor electrode-forming materials. 
     
     
       16. The method of  claim 15  wherein the removing is of all of only one of the first and second capacitor electrode-forming materials. 
     
     
       17. The method of  claim 14  wherein the removing is of only some of at least one of the first and second capacitor electrode-forming materials. 
     
     
       18. The method of  claim 17  wherein the removing is of only some of only one of the first and second capacitor electrode-forming materials. 
     
     
       19. The method of  claim 14  wherein one of the first and second capacitor electrode-forming materials is insulative, and the other of the first and second capacitor electrode-forming materials is at least one of conductive and semiconductive. 
     
     
       20. The method of  claim 19  wherein the other is semiconductive. 
     
     
       21. The method of  claim 19  wherein the one comprises silicon dioxide and the other comprises polysilicon. 
     
     
       22. The method of  claim 14  wherein the retaining structure is provided prior to forming the capacitor electrodes within the capacitor electrode openings. 
     
     
       23. The method of  claim 22  wherein the retaining structure is provided prior to forming the plurality of capacitor electrode openings. 
     
     
       24. The method of  claim 14  comprising providing a plurality of the retaining structures at different elevations from the one elevation. 
     
     
       25. The method of  claim 14  wherein the retaining structure is insulative and comprises a part of a finished circuitry construction incorporating the plurality of capacitors. 
     
     
       26. The method of  claim 14  wherein no portion of the retaining structure comprises a part of a finished circuitry construction incorporating the plurality of capacitors. 
     
     
       27. The method of  claim 14  wherein the retaining structure comprises a lattice. 
     
     
       28. The method of  claim 14  wherein the individual capacitor electrodes are supported at least in part by at least one of the first and second capacitor electrode-forming materials in a finished circuitry construction incorporating the plurality of capacitors. 
     
     
       29. The method of  claim 28  wherein the individual capacitor electrodes are supported at least in part by only one of the first and second capacitor electrode-forming materials in the finished circuitry construction. 
     
     
       30. The method of  claim 28  wherein the individual capacitor electrodes are supported at least in part by both of the first and second capacitor electrode-forming materials in the finished circuitry construction. 
     
     
       31. The method of  claim 14  wherein the individual capacitor electrodes are not supported by any of the first and second capacitor electrode-forming materials in a finished circuitry construction incorporating the plurality of capacitors. 
     
     
       32. A method of forming a plurality of capacitors, comprising:
 forming a plurality of capacitor electrode openings over a semiconductor substrate, individual of the capacitor electrode openings being bounded on a first pair of opposing sides by a first capacitor electrode-forming material at one elevation and on a second pair of opposing sides by a different second capacitor electrode-forming material at the one elevation; 
 forming individual capacitor electrodes within individual of the capacitor electrode openings; 
 providing a retaining structure comprising a lattice at another elevation supportive of a plurality of the individual capacitor electrodes, the retaining structure comprising material different from both of the first and second capacitor electrode-forming materials, wherein cross pieces of the lattice intersect one another at about 90°; 
 after forming the capacitor electrodes, removing at least some of at least one of the first and second capacitor electrode-forming materials to expose opposing outer lateral sidewall surface portions of the capacitor electrodes; and 
 incorporating the capacitor electrodes into a plurality of capacitors.