Semiconductor device and radiation detector employing it

Abstract

A wiring substrate 20 , comprising a glass substrate, formed by integrally bundling a plurality of glass fibers and provided with through holes 20 c , and conductive members 21 , disposed at through holes 20 c , is used. Input portions 21 a of conductive members 21 , formed on an input surface 20 a of this wiring substrate 20 , are connected to bump electrodes 17 , which are provided on an output surface 15 b of a PD array 15 in one-to-one correspondence with respect to conductive members 21 , thereby arranging a semiconductor device 5 . A radiation detector is arranged by connecting a scintillator 10 via an optical adhesive agent 11 to a light-incident surface 15 a of PD array 15 and connecting a signal processing element 30 via bump electrodes 31 to output surface 20 b of wiring substrate 20 . A semiconductor device, with which the semiconductor elements and the corresponding conductive paths of the wiring substrate are connected satisfactorily, and a radiation detector using this semiconductor device are thus provided.

1. A semiconductor device comprising:
 a semiconductor element, outputting an electrical signal; and 
 a wiring substrate, provided with a conduction path, guiding the electrical signal between a signal input surface and a signal output surface, and connected to the semiconductor element at the signal input surface; 
 the wiring substrate comprising: a glass substrate, formed by cutting a bundle-form glass member, formed by bundling fiber-form glass members, each comprising a core glass portion and a coating glass portion, provided at the periphery of the core glass portion, to a desired thickness and provided with a through hole by the removal of the core glass portion; and a conductive member, disposed in the through hole and functioning as the conduction path by providing electrical continuity between the signal input surface and the signal output surface; and 
 the semiconductor element and the corresponding conductive member of the wiring substrate being electrically connected via a bump electrode that is formed on an output surface of the semiconductor element and in one-to-one correspondence with respect to the conductive member, wherein 
 the semiconductor element is provided with, as the bump electrode, at least a first bump electrode, and a second bump electrode that is larger than the first bump electrode, 
 the glass substrate is provided with, as the through hole, at least a first through hole, corresponding to the first bump electrode, of a predetermined opening area and a second through hole, corresponding to the second bump electrode, that is larger in opening area than the first through hole, 
 the opening area of the second through hole at the signal input surface is larger than the opening area of the first through hole at the signal input surface, and 
 a portion of the first bump electrode enters into the interior of the first through hole provided with the corresponding conductive member, and a portion of the second bump electrode enters into the interior of the second through hole provided with the corresponding conductive member. 
 
   
   
     2. The semiconductor device according to  claim 1 , wherein the conductive member is formed on the inner wall of the through hole provided in the glass substrate. 
   
   
     3. The semiconductor device according to  claim 1 , wherein the through hole of the glass substrate is formed so that the opening area at the signal input surface is larger than the opening area at a predetermined position in the interior of the glass substrate. 
   
   
     4. The semiconductor device according to  claim 3 , wherein the through hole of the glass substrate has a predetermined range thereof at the signal input surface side formed to a tapered shape, with which the opening area decreases gradually from the signal input surface towards the interior of the glass substrate. 
   
   
     5. The semiconductor device according to  claim 3 , wherein the through hole of the glass substrate has a predetermined range thereof at the signal input surface side formed to a recessed shape that is of a predetermined opening area that is greater than the opening area in a range that includes a predetermined position in the interior of the glass substrate. 
   
   
     6. The semiconductor device according to  claim 1 , further comprising signal processing means, connected to the signal output surface of the wiring substrate and processing the electrical signal from the semiconductor element. 
   
   
     7. A radiation detector, arranged so as to include the semiconductor device according to  claim 6  and comprising:
 radiation detecting means, including the semiconductor element and outputting the electrical signal upon detection of incident radiation; 
 the signal processing means, processing the electrical signal from the radiation detecting means; and 
 a wiring substrate section, including the wiring substrate and having the signal input surface and the signal output surface being connected to the radiation detecting means and the signal processing means, respectively. 
 
   
   
     8. The radiation detector according to  claim 7 , wherein the glass substrate is formed of a predetermined glass material having a radiation shielding function. 
   
   
     9. The radiation detector according to  claim 7 , wherein the radiation detecting means comprises: a scintillator, generating scintillation light upon incidence of radiation; and the semiconductor element, detecting the scintillation light from the scintillator. 
   
   
     10. The radiation detector according to  claim 7 , wherein the radiation detecting means comprises the semiconductor element, detecting incident radiation.