Transflective pixel structure and fabricating method thereof

Abstract

A transflective pixel structure suitable for being disposed on a substrate is provided. The transflective pixel structure includes a gate, a gate insulator, a channel layer, a transflective conductive layer, a passivation layer, and a second transflective film. The gate is disposed on the substrate and the gate insulator is disposed on the substrate to cover the gate. The channel layer is disposed on the gate insulator and located above the gate. The transflective conductive layer is disposed on part of the channel layer and part of the gate insulator. The passivation layer is disposed on the transflective conductive layer and part of the channel layer, and the second transflective film is disposed on part of the passivation layer. The transflective conductive layer includes a source, a drain, and a first transflective film connected to the drain. Besides, the second transflective film is located above the first transflective film.

1. A transflective pixel structure, suitable for being disposed on a substrate, the transflective pixel structure comprising:
 a gate, disposed on the substrate; 
 a gate insulator, disposed on the substrate, the gate insulator covering the gate; 
 a channel layer, disposed on the gate insulator, wherein the channel layer is located above the gate; 
 a transflective conductive layer, disposed on part of the channel layer and part of the gate insulator, wherein the transflective conductive layer comprises a source, a drain, and a first transflective film connected to the drain; 
 a passivation layer, disposed on the transflective conductive layer and part of the channel layer; and 
 a second transflective film, disposed on part of the passivation layer, wherein the second transflective film is located above the first transflective film. 
 
   
   
     2. The transflective pixel structure as claimed in  claim 1 , wherein the material of the transflective conductive layer comprises silver or silver alloy. 
   
   
     3. The transflective pixel structure as claimed in  claim 1 , wherein the thickness of the first transflective film and the second transflective film is between 10 nm and 60 nm, respectively. 
   
   
     4. The transflective pixel structure as claimed in  claim 1 , wherein the second transflective film comprises a conductive layer. 
   
   
     5. The transflective pixel structure as claimed in  claim 4 , wherein the material of the conductive layer comprises silver or silver alloy. 
   
   
     6. The transflective pixel structure as claimed in  claim 1 , further comprising a capacitor-bottom electrode disposed on the substrate, wherein the capacitor-bottom electrode and the first transflective film form a storage capacitor. 
   
   
     7. The transflective pixel structure as claimed in  claim 1 , wherein the material of the passivation layer comprises dielectric material. 
   
   
     8. The transflective pixel structure as claimed in  claim 7 , wherein the material of the passivation layer is SiO 2 . 
   
   
     9. The transflective pixel structure as claimed in  claim 8 , wherein the thickness of the passivation layer is between 5 nm and 120 nm so that a light presents blue color through the transflective pixel structure; the thickness of the passivation layer is between 120 nm and 145 nm so that a light presents green color through the transflective pixel structure; and the thickness of the passivation layer is between 145 nm and 190 nm so that a light presents red color through the transflective pixel structure. 
   
   
     10. The transflective pixel structure as claimed in  claim 7 , wherein the material of the passivation layer is Si 3 N 4 . 
   
   
     11. The transflective pixel structure as claimed in  claim 10 , wherein the thickness of the passivation layer is between 5 nm and 70 nm so that a light presents blue color through the transflective pixel structure; the thickness of the passivation layer is between 70 nm and 95 nm so that a light presents green color through the transflective pixel structure; and the thickness of the passivation layer is between 95 nm and 120 nm so that a light presents red color through the transflective pixel structure. 
   
   
     12. A transflective pixel structure, suitable for being disposed on a substrate, the transflective pixel structure comprising:
 a gate, disposed on the substrate; 
 a gate insulator, disposed on the substrate, wherein the gate insulator covers the gate; 
 a channel layer, disposed on the gate insulator, wherein the channel layer is located above the gate; 
 a metal layer, disposed on part of the channel layer, wherein the metal layer comprises a source and a data line; 
 a transflective conductive layer, disposed on part of the channel layer and part of the gate insulator, wherein the transflective conductive layer comprises a drain and a first transflective film connected to the drain, and the transflective conductive layer and the metal layer respectively correspond to two sides of the gate; 
 a passivation layer, disposed on the metal layer, the transflective conductive layer, and part of the channel layer; and 
 a second transflective film, disposed on part of the passivation layer, wherein the second transflective film is located above the first transflective film. 
 
   
   
     13. The transflective pixel structure as claimed in  claim 12 , wherein the material of the metal layer comprises aluminum, molybdenum, or aluminum-molybdenum alloy. 
   
   
     14. The transflective pixel structure as claimed in  claim 12 , wherein the material of the transflective conductive layer comprises silver or silver alloy. 
   
   
     15. The transflective pixel structure as claimed in  claim 12 , wherein the second transflective film comprises a conductive layer. 
   
   
     16. The transflective pixel structure as claimed in  claim 15 , wherein the conductive layer further comprises a auxiliary data line disposed on part of the passivation layer, and the auxiliary data line is located above the metal layer. 
   
   
     17. The transflective pixel structure as claimed in  claim 16 , wherein the material of the conductive layer comprises silver or silver alloy. 
   
   
     18. The transflective pixel structure as claimed in  claim 12 , further comprising a capacitor-bottom electrode disposed on the substrate, wherein the capacitor-bottom electrode and the first transflective film form a storage capacitor. 
   
   
     19. The transflective pixel structure as claimed in  claim 12 , wherein the material of the passivation layer comprises dielectric material. 
   
   
     20. The transflective pixel structure as claimed in  claim 19 , wherein the material of the passivation layer is SiO 2 . 
   
   
     21. The transflective pixel structure as claimed in  claim 20 , wherein the thickness of the passivation layer is between 5 nm and 120 nm so that a light presents blue color through the transflective pixel structure; the thickness of the passivation layer is between 120 nm and 145 nm so that a light presents green color through the transflective pixel structure; and the thickness of the passivation layer is between 145 nm and 190 nm so that a light presents red color through the transflective pixel structure. 
   
   
     22. The transflective pixel structure as claimed in  claim 19 , wherein the material of the passivation layer is Si 3 N 4 . 
   
   
     23. The transflective pixel structure as claimed in  claim 22 , wherein the thickness of the passivation layer is between 5 nm and 70 nm so that a light presents blue color through the transflective pixel structure; the thickness of the passivation layer is between 70 nm and 95 nm so that a light presents green color through the transflective pixel structure; and the thickness of the passivation layer is between 95 nm and 120 nm so that a light presents red color through the transflective pixel structure.