Current and voltage source that is unaffected by temperature, power supply, and device process

Abstract

An integrated circuit in accordance with one embodiment of the invention includes an oscillator circuit and a source circuit. The source circuit outputs a reference voltage and a bias current, wherein the reference voltage changes by substantially the same proportion as the bias current. The oscillator circuit is coupled to receive the reference voltage and the bias current from the source circuit. The oscillator circuit outputs an oscillating electrical signal.

1. An integrated circuit chip comprising:
 a bandgap reference circuit for outputting a reference voltage and a bias current, wherein said reference voltage changes by a substantially same proportion as said bias current, said bandgap reference circuit comprises a first resistor and a second resistor; and 
 an oscillator circuit coupled to receive said reference voltage and said bias current from said bandgap reference circuit, said oscillator circuit is coupled to said second resistor of said bandgap reference circuit, said oscillator circuit for outputting an oscillating electrical signal; 
 wherein an equation involving aspects of both said bandgap reference circuit and said oscillator circuit is utilized to determine a scalar value for said second resistor of said bandgap reference circuit such that said bandgap reference circuit is substantially unaffected by variations in temperature and power supply variations and variations in an integrated circuit transistor fabrication process. 
 
   
   
     2. The integrated circuit chip of  claim 1 , wherein said bandgap reference circuit comprises a transistor coupled to said second resistor; and wherein said equation comprises a base-emitter voltage of said transistor. 
   
   
     3. The integrated circuit chip of  claim 1 , wherein said equation comprises a temperature coefficient of said first resistor. 
   
   
     4. The integrated circuit chip of  claim 1 , wherein said equation comprises a change in degrees Celsius. 
   
   
     5. The integrated circuit chip of  claim 1 , wherein said equation comprises a temperature in degrees Kelvin. 
   
   
     6. The integrated circuit chip of  claim 1 , wherein said equation comprises an electron charge value. 
   
   
     7. An integrated circuit chip comprising:
 a bandgap reference circuit for generating a reference voltage and a bias current, wherein said reference voltage changes by a substantially same proportion as said bias current, said bandgap reference circuit comprises a first resistor, a second resistor, a first transistor, a second transistor and an amplifier, wherein said first transistor and said first resistor are coupled to a first input of said amplifier and said second transistor is coupled to a second input of said amplifier; and 
 an oscillator coupled to receive said reference voltage and said bias current, said oscillator is coupled to said second resistor of said bandgap reference circuit, said oscillator for outputting an oscillating electrical signal; 
 wherein an equation involving aspects of both said bandgap reference circuit and said oscillator circuit is utilized to determine a scalar value for said second resistor of said bandgap reference circuit such that said bandgap reference circuit is substantially unaffected by variations in temperature and power supply variations and variations in an integrated circuit transistor fabrication process. 
 
   
   
     8. The integrated circuit chip of  claim 7 , wherein said bandgap reference circuit comprises a third transistor coupled to said second resistor; and wherein said equation comprises a base-emitter voltage of said third transistor. 
   
   
     9. The integrated circuit chip of  claim 8 , wherein said equation comprises a temperature coefficient of said first resistor. 
   
   
     10. The integrated circuit chip of  claim 9 , wherein said equation comprises a change in degrees Celsius. 
   
   
     11. The integrated circuit chip of  claim 10 , wherein said equation comprises a temperature in degrees Kelvin. 
   
   
     12. The integrated circuit chip of  claim 11 , wherein said equation comprises an electron charge value.