US7569505B2ExpiredUtilityPatentIndex 83
Method for producing an electronic component passivated by lead free glass
Est. expiryJul 5, 2025(expired)· nominal 20-yr term from priority
H10W 74/43C03C 3/068
83
PatentIndex Score
8
Cited by
11
References
25
Claims
Abstract
The invention relates to a method for the production of glass-coated electric components, wherein the components are, inter alia, passivated by the application of the glass. The lead-free glass used is not affected through purification and processing steps and the electric component is protected from mechanical damaging and other detrimental influences, such as impurities. Further, the method remarkably helps to stabilize the electrical properties of the components. Inter alia, a sufficient acid resistance is achieved and it results in an improvement of the expansion adjustment of the glass.
Claims
exact text as granted — not AI-modified1. A method of producing a glass-coated electronic component, comprising the following steps:
i. processing a lead-free glass with a liquid to a suspension, wherein the glass has a composition (in % by weight) comprising:
SiO 2
3-12%
B 2 O 3
24-35%
Al 2 O 3
0-6%
Cs 2 O
0-5%
MgO
0-5%
BaO
0-5%
Bi 2 O 3
0-5%
CeO 2
0.1-1%
MoO 3
0-1%
Sb 2 O 3
0-2%
ZnO
50-65%;
ii. applying the suspension onto a component body;
iii. sintering the component body.
2. The method according to claim 1 , wherein the composition (in % by weight) comprises:
SiO 2
4-10%
B 2 O 3
27-31%
Al 2 O 3
0-4%
Cs 2 O
0-4%
MgO
0-4%
BaO
0-4%
Bi 2 O 3
0-3%
CeO 2
0.6%
MoO 3
0.5%
Sb 2 O 3
0.5%
ZnO
57-62%.
3. The method according to claim 1 , wherein the glass processed into said suspension is in the form of a ground glass powder.
4. The method according to claim 3 , wherein the glass powder is iron-free and in an abrasion-poor condition.
5. The method according to claim 3 , wherein the glass powder has an average grain size range of between 2.5 to 150 μm.
6. The method according to claim 3 , wherein the glass is at first ground to a fine powder having a grain size of D50=10 μm, D99=63 μm to D50=8 μm, D99=40 μm.
7. The method according to claim 1 , wherein the liquid is water.
8. The method according to claim 1 , wherein the suspension contains at least one additive.
9. The method according to claim 8 , wherein the at least one additive is ammonium perchlorate and/or nitric acid.
10. The method according to claim 1 , wherein the suspension contains alcohols and/or organic binder systems.
11. The method according to claim 1 , wherein the suspension is dropped onto a component body.
12. The method according to claim 1 , wherein the electronic component is a semiconductor component.
13. The method according to claim 12 , wherein the semiconductor component is a diode.
14. The method according to claim 1 , wherein the sintering is performed at a sintering temperature of at most 680° C.
15. The method according to claim 1 , wherein the suspension completely covers fusion partners on the component body so that during burning no cavities are generated and/or no exfoliation occurs.
16. The method according to claim 1 , wherein a galvanic tinning or dip-tinning of electric lead wires of the electronic component follows the sintering.
17. An electronic component having an applied lead-free glass layer, wherein the glass layer comprises the following composition (in % by weight):
SiO 2
3-12%
B 2 O 3
24-35%
Al 2 O 3
0-6%
Cs 2 O
0-5%
MgO
0-5%
BaO
0-5%
Bi 2 O 3
0-5%
CeO 2
0.1-1%
MoO 3
0-1%
Sb 2 O 3
0-2%
ZnO
50-65%.
18. The electronic component according to claim 17 , wherein the glass layer comprises the following composition (in % by weight):
SiO 2
4-10%
B 2 O 3
27-31%
Al 2 O 3
0-4%
Cs 2 O
0-4%
MgO
0-4%
BaO
0-4%
Bi 2 O 3
0-3%
CeO 2
0.6%
MoO 3
0.5%
Sb 2 O 3
0.5%
ZnO
57-62%.
19. The electronic component according to claim 17 , consisting of a semiconductor component with the lead-free glass layer applied thereto.
20. The electronic component according to claim 19 , wherein the semiconductor component is a diode.
21. The method according to claim 10 , wherein said alcohols are polyhydric and long chain and wherein said organic binder systems are alcoholic dispersions of acrylate polymerizates.
22. A method of passivating an electronic component, said method comprising the steps of:
a) processing a glass powder with a liquid to form a suspension, wherein the glass powder is free of lead and has a composition, in percent by weight:
SiO 2
3-12%
B 2 O 3
24-35%
Al 2 O 3
0-6%
Cs 2 O
0-5%
MgO
0-5%
BaO
0-5%
Bi 2 O 3
0-5%
CeO 2
0.1-1%
MoO 3
0-1%
Sb 2 O 3
0-2%
ZnO
50-65%.
b) applying the suspension onto a component body of the electronic component; and
c) sintering the component body with the suspension applied there on in step b) to form a hermetically sealed lead-free glass layer around the electronic component so as to passivate the electronic component.
23. The method according to claim 22 , wherein the liquid is water and the glass powder has a grain size range of 2.5 to 150 μm.
24. The method according to claim 22 , wherein the sintering is performed at a sintering temperature of at most 680° C.
25. The method according to claim 23 , wherein the electronic component is a diode and said lead-free glass layer encloses the diode.Cited by (0)
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