CMOS image sensor and method for manufacturing the same

Abstract

A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses.

1. A method of manufacturing a complementary metal oxide semiconductor image sensor, the method comprising:
 forming a first planarization layer on a semiconductor substrate having a plurality of photodiodes; 
 forming color filter layers on the first planarization layer corresponding to the plurality of photodiodes, the color filter layers being spaced apart from each other by a predetermined interval; 
 forming a second planarization layer on the color filter layers; 
 shaping a surface of the second planarization layer to a convex form; 
 forming holes by selectively removing a portion of the second planarization layer to expose space between each of the color filter layers; 
 forming a light blocking layer by filling the holes with a light blocking material; and 
 forming a plurality of microlenses on the convex shaped second planarization layer having the light blocking layer corresponding to the color filter layers. 
 
   
   
     2. The method according to  claim 1 , wherein shaping a surface of the second planarization layer to a convex form comprises;
 applying a photosensitive layer on the second planarization layer and selectively patterning the photosensitive layer; 
 reflowing the patterned photosensitive layer to form a convex shaped photosensitive layer; and 
 etching the photosensitive layer and the second planarization layer using 1:1 etching selectivity. 
 
   
   
     3. The method according to  claim 1 , wherein the light blocking material is formed of opaque metal. 
   
   
     4. The method according to  claim 1 , further comprising projecting ultraviolet rays on the microlenses for hardening. 
   
   
     5. A method of manufacturing a complementary metal oxide semiconductor image sensor, the method comprising:
 forming a first planarization layer on a semiconductor substrate having a plurality of photodiodes; 
 forming color filter layers on the first planarization layer corresponding to the plurality of photodiodes, the color filter layers being spaced apart from each other by a predetermined interval; 
 forming a second planarization layer on the color filter layers; 
 shaping a surface of the second planarization layer to a convex form, wherein shaping the surface of the second planarization layer to the convex form comprises:
 applying a photosensitive layer on the second planarization layer and selectively patterning the photosensitive layer, 
 reflowing the patterned photosensitive layer to form a convex shaped photosensitive layer, and 
 etching the photosensitive layer and the second planarization layer using 1:1 etching selectivity; and 
 
 forming a plurality of microlenses on the convex shaped second planarization layer corresponding to the color filter layers.