High frequency arrangement

Abstract

A high frequency arrangement is provided that includes an integrated high frequency circuit, a first bond pad, which is electrically connected by a first electrical supply line, in particular a bond wire and/or a solder bump, to a housing terminal and/or another circuit, wherein the first bond pad adjoins a dielectric so that the first bond pad forms a first capacitance with the dielectric and an electrically conductive region of the integrated high-frequency circuit, and the first capacitance and the first supply line, which has an inductance, influence a (tuned) first resonant frequency associated with the high-frequency circuit.

1. A high frequency arrangement comprising:
 an integrated high frequency circuit operating at a given operating frequency; 
 a first bond pad being electrically connected by a first electrical supply line having an inductance to a housing terminal and/or another circuit, the first electrical supply line being a bond wire or a solder bump; and 
 a dielectric that adjoins the first bond pad so that the first bond pad forms a first capacitance with the dielectric and an electrically conductive region of the integrated high-frequency circuit, wherein the first capacitance and the first supply line provide a first resonant frequency associated with the high-frequency circuit at a value substantially equal to the operating frequency of the high-frequency circuit. 
 
     
     
       2. The high frequency arrangement according to  claim 1 , further comprising a second bond pad being electrically connected in parallel to the housing terminal and/or the additional circuit by a second supply line, the second bond pad being conductively connected to the electrically conductive region. 
     
     
       3. The high frequency arrangement according to  claim 1 , further comprising a third bond pad being electrically connected in parallel to the housing terminal and/or the additional circuit by a third supply line having an inductance, wherein the third bond pad adjoins a dielectric so that the third bond pad forms a second capacitance with the dielectric and an electrically conductive region of the integrated high-frequency circuit, and wherein the second capacitance and the third supply line provide a second resonant frequency associated with the high-frequency circuit in the vicinity of the operating frequency of the high-frequency circuit but different from the first resonant frequency. 
     
     
       4. The high frequency arrangement according to  claim 3 , further comprising additional parallel circuits formed of additional supply lines and additional bond pads adjoining dielectrics, which provide additional resonant frequencies. 
     
     
       5. The high frequency arrangement according to  claim 3 , wherein the first capacitance has a different geometry or a different surface area than the second capacitance. 
     
     
       6. The high frequency arrangement according to  claim 1 , wherein the conductive region is conductively connected to a semiconductor region of an active integrated component of the integrated high-frequency circuit or to an emitter of a high-frequency bipolar transistor or of a high-frequency tetrode. 
     
     
       7. The high frequency arrangement according to  claim 2 , wherein at least the second supply line forms a negative feedback for the integrated high frequency circuit, which is reduced for at least the first resonant frequency. 
     
     
       8. The high frequency arrangement according to  claim 1 , wherein the dielectric has silicon dioxide and has a thickness less than 100 nm. 
     
     
       9. The high frequency arrangement according to  claim 1 , wherein the conductive region has a metal. 
     
     
       10. A high frequency arrangement comprising:
 a high frequency circuit operating at a given operating frequency, the high frequency circuit being provided on a semiconductor chip that is connected to a housing terminal and/or an additional circuit by an electrical supply line having an inductance, the electrical supply line being a bond wire or a solder bump; and 
 a series-resonant circuit being connected in parallel with the electrical supply line and providing a resonant frequency substantially equal to an operating frequency of the high-frequency circuit. 
 
     
     
       11. The high frequency arrangement according to  claim 1 , wherein the high frequency arrangement is provided in a radar system, a radio communications system, or a mobile telephony system. 
     
     
       12. The high frequency arrangement according to  claim 1 , wherein the dielectric has silicon dioxide and has a thickness less than 50 nm.