US7608547B2ExpiredUtilityA1

Etchant and method for fabricating liquid crystal display using the same

82
Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Jul 13, 2005Filed: Jul 13, 2006Granted: Oct 27, 2009
Est. expiryJul 13, 2025(expired)· nominal 20-yr term from priority
Inventors:Hong-Sick ParkShi-Yul KimJong-Hyun ChoungWon-Suk Shin
H10F 77/244H10F 71/138G02F 1/13439C23F 1/44C23F 1/16
82
PatentIndex Score
6
Cited by
10
References
27
Claims

Abstract

Provided are an etchant used for a transparent conductive oxide layer and a method for fabricating a liquid crystal display (LCD) using the etchant. The etchant includes 2-5 wt % sulfuric acid, 0.02-10 wt % hydrogen sulfate of alkali metal, and deionized water as the remainder.

Claims

exact text as granted — not AI-modified
1. An etchant for a transparent conductive oxide layer comprising:
 2-15 wt % sulfuric acid; 
 0.02-10 wt % hydrogen sulfate of an alkali metal; and deionized water as the remainder, 
 wherein the transparent conductive oxide layer is made of indium tin oxide (ITO) or indium zinc oxide (IZO). 
 
     
     
       2. The etchant of  claim 1 , wherein the hydrogen sulfate of an alkali metal includes KHSO 4 . 
     
     
       3. The etchant of  claim 2 , further comprising a 0.02-10 wt % auxiliary oxidizer. 
     
     
       4. The etchant of  claim 3 , wherein the auxiliary oxidizer is a compound of at least one selected from the group consisting of H 3 PO 4 , HNO 3 , CH 3 COOH, HClO 4 , H 2 O 2 , and oxone. 
     
     
       5. The etchant of  claim 1 , wherein the hydrogen sulfate of an alkali metal includes KHSO 4 , further comprising a 0.02-10 wt % auxiliary oxidizer, further comprising a 0.01-5 wt % auxiliary inhibitor. 
     
     
       6. The etchant of  claim 5 , wherein the auxiliary oxidizer is a compound of at least one selected from a group consisting of H 3 PO 4 , HNO 3 , CH 3 COOH, HClO 4 , H 2 O 2 , and oxone. 
     
     
       7. The etchant of  claim 5 , wherein the auxiliary inhibitor is a compound of at least one selected from the group consisting of CH 3 COONH 4 , NH 4 SO 3 NH 2 , NH 4 C 6 H 5 O 2 , NH 4 COONH 4 , NH 4 Cl, NH 4 H 2 PO 4 , NH 4 OOCH, NH 4 HCO 3 , H 4 NO 2 CCH 2 C(OH)(CO 2 NH 4 )CH 2 CO 2 NH 4 , NH 4 PF 6 , HOC(CO 2 H)(CH 2 CO 2 NH 4 ) 2 , NH 4 NO 3 , (NH 4 ) 2 S 2 O 8 , H 2 NSO 3 NH 4 , and (NH 4 ) 2 SO 4 . 
     
     
       8. The etchant of  claim 1 , wherein the hydrogen sulphate of an alkali metal includes KHSO 4 , further comprising 0.01-5 wt % auxiliary inhibitor. 
     
     
       9. The etchant of  claim 8 , wherein the auxiliary inhibitor is a compound of at least one selected from the group consisting of CH 3 COONH 4 , NH 4 SO 3 NH 2 , NH 4 C 6 H 5 O 2 , NH 4 COONH 4 , NH 4 Cl, NH 4 H 2 PO 4 , NH 4 OOCH, NH 4 HCO 3 , H 4 NO 2 CCH 2 C(OH)(CO 2 NH 4 )CH 2 CO 2 NH 4 , NH 4 PF 6 , HOC(CO 2 H)(CH 2 CO 2 NH 4 ) 2 , NH 4 NO 3 , (NH 4 ) 2 S 2 O 8 , H 2 NSO 3 NH 4 , and (NH 4 ) 2 SO 4 . 
     
     
       10. The etchant of  claim 1 , further comprising a 0.02-10 wt % auxiliary oxidizer. 
     
     
       11. The etchant of  claim 10 , wherein the auxiliary oxidizer is a compound of at least one selected from the group consisting of H 3 PO 4 , HNO 3 , CH 3 COOH, HClO 4 , H 2 O 2 , and oxone. 
     
     
       12. The etchant of  claim 1 , further comprising a 0.02-10 wt % auxiliary oxidizer, further comprising a 0.01-5 wt % auxiliary inhibitor. 
     
     
       13. The etchant of  claim 12 , wherein the auxiliary oxidizer is a compound of at least one selected from the group consisting of H 3 PO 4 , HNO 3 , CH 3 COOH, HClO 4 , H 2 O 2 , and oxone. 
     
     
       14. The etchant of  claim 12 , wherein the auxiliary inhibitor is a compound of at least one selected form the group consisting of CH 3 COONH 4 , NH 4 SO 3 NH 2 , NH 4 C 6 H 5 O 2 , NH 4 COONH 4 , NH 4 Cl, NH 4 H 2 PO 4 , NH 4 OOCH, NH 4 HCO 3 , H 4 NO 2 CCH 2 C(OH)(CO 2 NH 4 )CH 2 CO 2 NH 4 , NH 4 PF 6 , HOC(CO 2 H)(CH 2 CO 2 NH 4 ) 2 , NH 4 NO 3 , (NH 4 ) 2 S 2 O 8 , H 2 NSO 3 NH 4 , and (NH 4 ) 2 SO 4 . 
     
     
       15. The etchant of  claim 1 , further comprising a 0.01-5 wt % auxiliary inhibitor. 
     
     
       16. The etchant of  claim 15 , wherein the auxiliary inhibitor is a compound of at least one selected from the group consisting of CH 3 COONH 4 , NH 4 SO 3 NH 2 , NH 4 C 6 H 5 O 2 , NH 4 COONH 4 , NH 4 Cl, NH 4 H 2 PO 4 , NH 4 OOCH, NH 4 HCO 3 , H 4 NO 2 CCH 2 C(OH)(CO 2 NH 4 )CH 2 CO 2 NH 4 , NH 4 PF 6 , HOC(CO 2 H)(CH 2 CO 2 NH 4 ) 2 , NH 4 NO 3 , (NH 4 ) 2 S 2 O 8 , H 2 NSO 3 NH 4 , and (NH 4 ) 2 SO 4 . 
     
     
       17. The etchant of  claim 1 , wherein the indium tin oxide (ITO) is amorphous indium tin oxide (ITO). 
     
     
       18. An etchant for a transparent conductive oxide layer, comprising:
 2-15 wt % sulfuric acid; 
 0.02-10 wt % hydrogen sulfate of alkali metal; 
 a 0.02-10 wt % auxiliary oxidizer; 
 a 0.01-5 wt % auxiliary inhibitor; and 
 deionized water as the remainder, 
 wherein the transparent conductive oxide layer is made of indium tin oxide (ITO) or indium zinc oxide (IZO). 
 
     
     
       19. The etchant of  claim 18 , wherein hydrogen sulfate of alkali metal includes KHSO 4 . 
     
     
       20. The etchant of  claim 18 , wherein the auxiliary oxidizer is a compound of at least one selected from the group consisting of H 3 PO 4 , HNO 3 , CH 3 COOH, HClO 4 , H 2 O 2 , and oxone. 
     
     
       21. The etchant of  claim 18 , wherein the auxiliary inhibitor is a compound of at least one selected from the group consisting of CH 3 COONH 4 , NH 4 SO 3 NH 2 , NH 4 C 6 H 5 O 2 , NH 4 COONH 4 , NH 4 Cl, NH 4 H 2 PO 4 , NH 4 OOCH, NH 4 HCO 3 , H 4 NO 2 CCH 2 C(OH)(CO 2 NH 4 )CH 2 CO 2 NH 4 , NH 4 PF 6 , HOC(CO 2 H)(CH 2 CO 2 NH 4 ) 2 , NH 4 NO 3 , (NH 4 ) 2 S 2 O 8 , H 2 NSO 3 NH 4 , and (NH 4 ) 2 SO 4 . 
     
     
       22. The etchant of  claim 18 , wherein the indium tin oxide (ITO) is amorphous indium tin oxide (ITO). 
     
     
       23. A method for fabricating a liquid crystal display (LCD), the method comprising:
 providing an insulating substrate in which a transparent conductive oxide layer is formed; and 
 patterning the transparent conductive oxide layer by etching the transparent conductive oxide layer using the etchant of one of  claims 1  to  14 . 
 
     
     
       24. The method of  claim 23 , wherein the etching is performed at 30-50° C. 
     
     
       25. The method of  claim 23 , wherein the etching is performed for 20-100 seconds. 
     
     
       26. The method of  claim 23 , wherein the transparent conductive oxide layer is made of indium tin oxide (ITO) or indium zinc oxide (IZO). 
     
     
       27. The method of  claim 26 , wherein the indium tin oxide (ITO) is amorphous indium tin oxide (ITO).

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