Passivation layer for semiconductor device and manufacturing method thereof

Abstract

Embodiments relate to a passivation layer for a semiconductor device that may be formed in a substrate having a plurality of semiconductor devices. The passivation layer may includes a first passivation layer, a second passivation layer, and a third passivation layer, and the passivation layer may have a laminated triple layer structure.

1. A passivation layer comprising:
 a first passivation layer; 
 a second passivation layer; and 
 a third passivation layer, 
 wherein the first, second, and third passivation layer form a laminated triple layer structure, 
 wherein the third passivation layer is formed by implanting ions in the second passivation layer and performing an annealing process, wherein said implanting ions and said performing an annealing process are two separate processes. 
 
   
   
     2. The passivation layer of  claim 1 , wherein the third passivation layer comprises a silicon oxide-nitride layer. 
   
   
     3. The passivation layer of  claim 2 , the first passivation layer comprises a silicon oxide layer. 
   
   
     4. The passivation layer of  claim 2 , wherein the second passivation layer comprises a silicon nitride layer. 
   
   
     5. The passivation layer of  claim 1 , wherein the first passivation layer comprises a silicon oxide layer, the second passivation layer comprises a silicon nitride layer, and the third passivation layer comprises a silicon oxide-nitride layer. 
   
   
     6. The passivation layer of  claim 1 , wherein the first passivation layer comprises a first material having first characteristics, the second passivation layer comprises a second material having second characteristics, and the third passivation layer comprises a third material having the first and second characteristics. 
   
   
     7. The passivation layer of  claim 6 , wherein the first passivation layer is formed on a semiconductor substrate. 
   
   
     8. A method comprising:
 providing a first passivation layer on a substrate; 
 providing a second passivation layer on the first passivation layer; 
 implanting an ion into a boundary surface between the first passivation layer and the second passivation layer; and 
 forming a third passivation layer between the first passivation layer and the second passivation layer by performing an annealing process, wherein said implanting an ion and said performing an annealing process are two separate processes. 
 
   
   
     9. The method of  claim 8 , wherein a plurality of semiconductor devices are formed on the substrate. 
   
   
     10. The method of  claim 8 , wherein the annealing process is performed to generate an interface between the first passivation layer and the second passivation layer. 
   
   
     11. The method of  claim 8 , wherein the ion comprises at least one of oxygen and an oxygen-based impurity. 
   
   
     12. The method of  claim 8 , wherein the annealing process is performed in a temperature range of approximately 250 to 450° C. 
   
   
     13. The method of  claim 8 , wherein a least one of N 2  and H 2  is used in the annealing process. 
   
   
     14. The method of  claim 8 , wherein the third passivation layer comprises a silicon oxide-nitride layer. 
   
   
     15. The method of  claim 8 , wherein the first passivation layer comprises a silicon oxide layer. 
   
   
     16. The method of  claim 8 , wherein the second passivation layer comprises a silicon nitride layer. 
   
   
     17. The method of  claim 8 , wherein the first passivation layer comprises a silicon oxide layer, the second passivation layer comprises a silicon nitride layer, and the third passivation layer comprises a silicon oxide-nitride layer. 
   
   
     18. A method comprising:
 forming a first passivation layer on a substrate having first material characteristics; 
 forming a second passivation layer on the first passivation layer having second material characteristics; and 
 forming a third passivation layer between the first and second passivation layers, the third passivation layer having material characteristics of both the first and second passivation layers, 
 wherein the third passivation layer is formed by implanting ions in the second passivation layer and performing an annealing process, wherein said implanting ions and said performing an annealing process are two separate processes. 
 
   
   
     19. The method of  claim 18 , wherein the first passivation layer comprises a silicon oxide layer, the second passivation layer comprises a silicon nitride layer, and the third passivation layer comprises a silicon oxide-nitride layer.