Semiconductor device and a manufacturing method of the same

Abstract

A semiconductor device is disclosed wherein first wiring lines in a first row extend respectively from first connecting portions toward one side of a semiconductor chip, while second wiring lines extend respectively from second connecting portions toward the side opposite to the one side of the semiconductor chip. The reduction in size of the semiconductor device can be attained.

1. A semiconductor device comprising:
 a wiring board having a first surface; 
 a semiconductor chip mounted over the first surface of the wiring board, the semiconductor chip having a main surface and a plurality of electrode pads including first electrode pads and second electrode pads formed over the main surface of the semiconductor chip along a first side of the semiconductor chip; 
 a plurality of first connecting portions formed over the first surface of the wiring board and arranged along the first side of the semiconductor chip; 
 a plurality of second connecting portions formed over the first surface of the wiring board and arranged along the first side of the semiconductor chip at positions more distant from the first side of the semiconductor chip than the first connecting portions; 
 a plurality of first wiring lines formed over the first surface of the wiring board, each connected to a corresponding first connecting portion of the plurality of first connecting portions, each of the plurality of first wiring lines having a width which is less than a width of the corresponding first connecting portion and extending from the corresponding first connecting portion toward the first side of the semiconductor chip; 
 a plurality of second wiring lines formed over the first surface of the wiring board, each connected to a corresponding second connecting portion of the plurality of second connecting portions, each of the plurality of second wiring lines having a width which is less than a width of the corresponding second connecting portion and extending from the corresponding second connecting portion toward a peripheral portion of the first surface of the wiring board, in a direction away from the first side of the main surface of the semiconductor chip; 
 a plurality of bonding wires connecting the first and second electrode pads with the first and second connecting portions, respectively; and 
 a resin sealing body for sealing the semiconductor chip and the bonding wires. 
 
     
     
       2. The semiconductor device as claimed in  claim 1 , wherein the second electrode pads are arranged alternately with the first electrode pads, and a first arrangement pitch (n 1 ), which is the arrangement pitch of the plurality of first connecting portions, is twice as large as a second arrangement pitch (ml), which is the arrangement pitch of the plurality of electrode pads. 
     
     
       3. The semiconductor device as claimed in  claim 2 , wherein a third arrangement pitch (n 2 ), which is the arrangement pitch of the plurality of second connecting portions, is twice as large as the second arrangement pitch (m 1 ). 
     
     
       4. The semiconductor device according to  claim 1 ,
 wherein the plurality of first and second connecting portions and the plurality of first and second electrode pads are quadrangular in plan, 
 wherein one side of each of the plurality of first connecting portions faces one side of a corresponding one of the first electrode pads, and 
 wherein one side of each of the plurality of second connecting portions faces one side of a corresponding one of the second electrode pads. 
 
     
     
       5. The semiconductor device according to  claim 3 , wherein the second connecting portions are each disposed at a middle position of the first arrangement pitch (n 1 ). 
     
     
       6. The semiconductor device according to  claim 1 , wherein the wiring board is of a multi-layer wiring structure having inner wiring layers. 
     
     
       7. The semiconductor device according to  claim 1 , wherein the wiring board is a build-up board of a multi-layer wiring structure having inner wiring layers. 
     
     
       8. The semiconductor device according to  claim 1 , wherein the wiring board is a semi-additive board of a multi-layer wiring structure having inner wiring layers. 
     
     
       9. The semiconductor device according to  claim 6 , wherein the first wiring lines are connected to plated wiring lines extended up to a surrounding portion of the wiring board. 
     
     
       10. The semiconductor device according to  claim 1 , further comprising a second semiconductor chip mounted over the first surface of the wiring board,
 wherein the first and second connecting portions are disposed between the semiconductor chip and the second semiconductor chip. 
 
     
     
       11. The semiconductor device according to  claim 7 , wherein the first wiring lines are connected to plated wiring lines extended up to a surrounding portion of the wiring board. 
     
     
       12. The semiconductor device according to  claim 8 , wherein the first wiring lines are connected to plated wiring lines extended up to a surrounding portion of the wiring board.