Semiconductor device including internal voltage generation circuit

Abstract

A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.

1. A semiconductor device comprising:
 a plurality of negative voltage supply lines connected in common, 
 a plurality of negative voltage detection circuits provided corresponding to said plurality of negative voltage supply lines, respectively, each providing a first activation signal when a voltage of a corresponding negative voltage supply line is higher than a predetermined negative voltage, 
 a plurality of negative charge supply circuits provided corresponding to said plurality of negative voltage supply lines, respectively, each supplying negative charge to a corresponding negative voltage supply line when said first activation signal is output from a corresponding negative voltage detection circuit, 
 a plurality of memory circuits provided corresponding to said plurality of negative voltage supply lines, respectively, each receiving said negative voltage from a corresponding negative voltage supply line, allowing a data write/read operation independently, and 
 a control circuit rendering a first number of negative voltage detection circuits active among said plurality of negative voltage detection circuits in an active mode, and rendering a second number of negative voltage detection circuits active in a standby mode, said second number lower than said first number. 
 
     
     
       2. The semiconductor according to  claim 1 , further comprising:
 a negative voltage detection circuit for standby, rendered active at least in a standby mode, driven by a drive current lower than the drive current of said negative voltage detection circuit to output a second activation signal when the voltage of said plurality of negative voltage supply lines is higher than said predetermined negative voltage, and 
 a negative charge supply circuit for standby, supplying negative charge to said plurality of negative voltage supply lines when said second activation signal is output from said voltage detection circuit for standby, 
 wherein said control circuit renders one or more of said plurality of negative voltage detection circuits active in an active mode, and renders said plurality of negative voltage detection circuits inactive in said standby mode. 
 
     
     
       3. The semiconductor device according to  claim 1 , further comprising a switch circuit provided between said plurality of negative voltage supply lines for electrically disconnecting each negative voltage supply line from other negative voltage supply lines in said active mode, and connecting in common said plurality of negative voltage supply lines in said standby mode.