P
US7666382B2ExpiredUtilityPatentIndex 91

Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof

Assignee: NANTERO INCPriority: Dec 16, 2004Filed: Dec 15, 2005Granted: Feb 23, 2010
Est. expiryDec 16, 2024(expired)· nominal 20-yr term from priority
Inventors:GHENCIU ELIODOR GHAN TZONG-RU TERRYSIVARAJAN RAMESHRUECKES THOMASSEN RAHULSEGAL BRENT MWARD JONATHAN W
D06M 11/50D06M 11/64D06M 11/55D06M 10/02C01B 2202/28Y10S977/845B82Y 30/00Y10S977/746C01B 32/168C01B 32/17D06M 2101/40B82Y 10/00B82Y 40/00C01B 2202/02H10K 85/221H10K 71/12
91
PatentIndex Score
27
Cited by
282
References
53
Claims

Abstract

Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing water. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.

Claims

exact text as granted — not AI-modified
1. An applicator liquid comprising:
 one or more carbon nanotubes and 
 an electronics-grade liquid medium comprising water, 
 wherein the carbon nanotubes are distributed in the liquid medium without substantial precipitation, flocculation or other macroscopic interaction and can remain separated for about at least one week, 
 wherein the nanotubes are at a concentration of greater than or equal to 10 mg/L, 
 wherein the nanotubes are pretreated to reduce a level of metal impurities to less than about 1×10 18  atoms/cm 3 , 
 wherein the applicator liquid is substantially free of polymers and surfactants, and 
 wherein the applicator liquid is substantially free of particulates having a diameter greater than about 500 nm. 
 
     
     
       2. The applicator liquid of  claim 1 , wherein the applicator liquid meets or exceeds specifications for use in class 1 semiconductor fabrication facility. 
     
     
       3. The applicator liquid of  claim 1 , wherein the applicator liquid is substantially free of metallic impurities. 
     
     
       4. The applicator liquid of  claim 1 , wherein the applicator liquid is substantially free of amorphous carbon impurities. 
     
     
       5. The applicator liquid of  claim 1 , wherein the applicator liquid comprises less than 500 parts per billion of metallic impurities. 
     
     
       6. The applicator liquid of  claim 1 , wherein the applicator liquid comprises less than 200 parts per billion of metallic impurities. 
     
     
       7. The applicator liquid of  claim 1 , wherein the applicator liquid comprises less than 50 parts per billion of metal impurities. 
     
     
       8. The applicator liquid of  claim 1 , wherein the applicator liquid comprises less than 500 parts per billion of heavy metal impurities. 
     
     
       9. The applicator liquid of  claim 1 , wherein the applicator liquid comprises from 0.1 to 10 parts per billion of heavy metal impurities. 
     
     
       10. The applicator liquid of  claim 1 , wherein the applicator liquid comprises less than 500 parts per billion of alkali (group I element) and alkaline earth (group II element) impurities. 
     
     
       11. The applicator liquid of  claim 1 , wherein the applicator liquid comprises from 1 to 25 parts per billion of alkali (group I element) and alkaline earth (group II element) impurities. 
     
     
       12. The applicator liquid of  claim 1 , wherein the applicator liquid comprises less than 500 parts per billion of transition metal impurities. 
     
     
       13. The applicator liquid of  claim 1 , wherein the applicator liquid comprises from 0.1 to 10 parts per billion of transition metal impurities. 
     
     
       14. The applicator liquid of  claim 1 , wherein the applicator liquid is substantially free of particle impurities having a diameter of greater than about 300 nm. 
     
     
       15. The applicator liquid of  claim 1 , wherein the applicator liquid is substantially free of particle impurities having a diameter of greater than about 45 nm. 
     
     
       16. The applicator liquid of  claim 1 , wherein the carbon nanotubes comprise conductive nanotubes. 
     
     
       17. The applicator liquid of  claim 1 , wherein the carbon nanotubes comprise semiconductive nanotubes. 
     
     
       18. The applicator liquid of  claim 1 , wherein the carbon nanotubes comprise single-walled carbon nanotubes. 
     
     
       19. The applicator liquid of  claim 1 , wherein the carbon nanotubes comprise multi-walled carbon nanotubes. 
     
     
       20. The applicator liquid of  claim 1 , wherein the applicator liquid comprise nanotubes at a concentration of greater than 100 mg/L. 
     
     
       21. The applicator liquid of  claim 1 , wherein the applicator liquid comprise nanotubes at a concentration of greater than 1000 mg/L. 
     
     
       22. A method for making the applicator liquid of  claim 1 , the method comprising:
 a) contacting one or more carbon nanotubes with a liquid medium comprising water to obtain a mixture; and 
 b) removing impurities from the carbon nanotubes to obtain the applicator liquid, 
 wherein the applicator liquid meets or exceeds specifications for use in class 1 semiconductor fabrication facility. 
 
     
     
       23. The method of  claim 22 , wherein the applicator liquid is purified to comprise less than 500 parts per billion of metallic impurities. 
     
     
       24. The method of  claim 22 , wherein the applicator liquid is purified to comprise less than 200 parts per billion of metallic impurities. 
     
     
       25. The method of  claim 22 , wherein the applicator liquid is purified to comprise less than 50 parts per billion of metal impurities. 
     
     
       26. The method of  claim 22 , wherein the applicator liquid is purified to comprise less than 500 parts per billion of heavy metal impurities. 
     
     
       27. The method of  claim 22 , wherein the applicator liquid is purified to comprise from 0.1 to 10 parts per billion of heavy metal impurities. 
     
     
       28. The method of  claim 22 , wherein the applicator liquid is purified to comprise less than 500 parts per billion of alkali (group I element) and alkaline earth (group II element) impurities. 
     
     
       29. The method of  claim 22 , wherein the applicator liquid is purified to comprise from 1 to 25 parts per billion of alkali (group I element) and alkaline earth (group II element) impurities. 
     
     
       30. The method of  claim 22 , wherein the applicator liquid is purified to comprise less than 500 parts per billion of transition metal impurities. 
     
     
       31. The method of  claim 22 , wherein the applicator liquid is purified to comprise from 0.1 to 10 parts per billion of transition metal impurities. 
     
     
       32. The method of  claim 22 , wherein the applicator liquid is substantially free of particle impurities having a diameter of greater than about 300 nm. 
     
     
       33. The method of  claim 22 , wherein the applicator liquid is substantially free of particle impurities having a diameter of greater than about 45 nm. 
     
     
       34. The method of  claim 22 , wherein the carbon nanotubes comprise conductive nanotubes. 
     
     
       35. The method of  claim 22 , wherein the carbon nanotubes comprise semiconductive nanotubes. 
     
     
       36. The method of  claim 22 , wherein the carbon nanotubes comprise single-walled carbon nanotubes. 
     
     
       37. The method of  claim 22 , wherein the carbon nanotubes comprise multi-walled carbon nanotubes. 
     
     
       38. The method of  claim 22 , wherein the applicator liquid comprise nanotubes at a concentration of greater than 100 mg/L. 
     
     
       39. The method of  claim 22 , wherein the applicator liquid comprise nanotubes at a concentration of greater than 1000 mg/L. 
     
     
       40. The method of  claim 22 , wherein step b) comprises performing a filtration process. 
     
     
       41. The method of  claim 40 , wherein the filtration process is a cross-flow filtration process. 
     
     
       42. The method of  claim 22 , wherein step b) comprises performing a centrifugation process. 
     
     
       43. The method of  claim 42 , wherein the centrifugation process comprises a continuous flow centrifugation. 
     
     
       44. The method of  claim 22 , wherein step b) is carried after or simultaneously with step a). 
     
     
       45. The method of  claim 44 , wherein step b) comprises performing a sonication process. 
     
     
       46. The method of  claim 44 , wherein step b) comprises contacting the carbon nanotubes with an acid. 
     
     
       47. The method of  claim 46 , wherein step b) comprises contacting the mixture with a base. 
     
     
       48. The method of  claim 47 , wherein base is added to substantially neutralize the mixture. 
     
     
       49. A method for making the applicator liquid of  claim 1 :
 a) contacting one or more carbon nanotubes with a liquid medium comprising water and an acid to obtain a mixture; 
 b) contacting the mixture with a base; and 
 c) removing soluble and particulate impurities, 
 wherein the applicator liquid meets or exceeds specifications for use in class 1 semiconductor fabrication facility. 
 
     
     
       50. The method of  claim 49 , wherein the base is added to neutralize the mixture. 
     
     
       51. The method of  claim 49 , wherein step a) comprises performing a sonciation process. 
     
     
       52. The method of  claim 49 , wherein step c) comprises performing a centrifugation process. 
     
     
       53. The method of  claim 49 , wherein step c) comprises performing a filtration process.

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