Method for fabricating organic electroluminescent device

Abstract

A method for fabricating an organic electroluminescent device (OLED) includes the following steps. First, a substrate is provided. Next, an anode layer is formed on the substrate. Next, a buffer layer is formed on the anode layer, wherein the buffer layer include a CF x film (fluorinated carbon films) containing carbon-fluoride bonded molecules. Next, a treatment process is performed on the CF x film to convert the carbon-fluoride bonded molecules into carbon-carbon bonded molecules. A plurality of organic layers is formed on the buffer layer. A cathode layer is formed on the organic layer. Because the buffer layer has a better conductivity, the organic electroluminescent device (OLED) of the present invention has a better luminous efficiency.

1. A method for fabricating an organic electroluminescent device (OLED), comprising:
 providing a substrate; 
 forming an anode layer on the substrate; 
 forming a buffer layer on the anode layer, wherein the buffer layer comprises a fluorinated carbon film containing carbon-fluoride bonded molecules; 
 performing a treatment process on the fluorinated carbon film to convert the carbon-fluoride bonded molecules into carbon-carbon bonded molecules to form a carbon-enriched film, wherein carbon atoms in the carbon-enriched film possess sp 2  electronic orbital; 
 forming a plurality of organic layers on the carbon-enriched film; and 
 forming a cathode layer on the organic layers. 
 
     
     
       2. The method for fabricating an OLED as recited in  claim 1 , wherein the treatment process comprises an ultraviolet irradiation process or a plasma treatment process. 
     
     
       3. The method for fabricating an OLED as recited in  claim 2 , wherein the ultraviolet irradiation process employs an ultraviolet light with a wavelength of about 180 nm˜260 nm. 
     
     
       4. The method for fabricating an OLED as recited in  claim 3 , wherein the wavelength of the ultraviolet light is about 185 nm or 254 nm. 
     
     
       5. The method for fabricating an OLED as recited in  claim 2 , wherein the ultraviolet irradiation process employs an ultraviolet light with an intensity of about 270 mJ/cm2˜810 mJ/cm2. 
     
     
       6. The method for fabricating an OLED as recited in  claim 5 , wherein the light intensity of the ultraviolet light is about 270 mJ/cm 2  or 810 mJ/cm 2 . 
     
     
       7. The method for fabricating an OLED as recited in  claim 2 , wherein the gas the plasma treatment process employs a gas containing argon (Ar) or nitrogen (N 2 ). 
     
     
       8. The method for fabricating an OLED as recited in  claim 1 , wherein the carbon-fluoride bonded molecules includes one of CF 1  (carbon monofluoride bonded molecule), CF 2  (carbon bifluoride bonded molecule), CF 3  (carbon trifluoride bonded molecule), C—CF n  (carbon-carbon n-fluoride bonded molecule) and a combination thereof. 
     
     
       9. The method for fabricating an OLED as recited in  claim 1 , wherein the fluorinated carbon film is formed by performing a plasma chemical vapor deposition process. 
     
     
       10. The method for fabricating an OLED as recited in  claim 1 , wherein the buffer layer comprises a hole injection layer (HIL) and a hole transporting layer (HTL). 
     
     
       11. The method for fabricating an OLED as recited in  claim 1 , wherein the method for forming the organic layer on the buffer layer comprises sequentially forming a hole transporting layer (HTL), an organic electroluminescent layer (OEL), an electron transporting layer (ETL) and an electron injection layer (EIL) over the buffer layer. 
     
     
       12. The method for fabricating an OLED as recited in  claim 11 , wherein the hole transporting layer (HTL) comprises NPB (.-naphylhenyldiamine). 
     
     
       13. The method for fabricating an OLED as recited in  claim 11 , wherein the organic electroluminescent layer (OEL) comprises a blended luminescence material doped with AlQ3 (aluminum tris (8-hydroxyquinoline)). 
     
     
       14. The method for fabricating an OLED as recited in  claim 11 , wherein the electron transporting layer (ETL) comprises AlQ 3  (aluminum tris (8-hydroxyquinoline)). 
     
     
       15. The method for fabricating an OLED as recited in  claim 11 , wherein the electron injection layer (EIL) comprises LiF (lithium fluoride). 
     
     
       16. The method for fabricating an OLED as recited in  claim 1 , wherein the anode layer comprises metal or transparent conductive material. 
     
     
       17. The method for fabricating an OLED as recited in  claim 1 , wherein the cathode layer comprises metal or transparent conductive material.