Method for forming photoresist pattern

Abstract

A method of forming a photoresist pattern, capable of improving an adhesion property of the photoresist pattern formed on a substrate, includes forming a photocatalytic layer on a substrate, forming a negative-type photoresist layer on the photocatalytic layer, exposing the photoresist layer to ultraviolet rays, heat-treating the photoresist layer, and developing the photoresist layer to form the photoresist pattern. Thereby, applying the photocatalytic layer formed on various substrates, the photoresist pattern has excellent adhesion property and is capable of ensuring a high aspect ratio.

1. A method of forming a photoresist pattern, the method comprising:
 forming a photocatalytic layer on a substrate; 
 forming a negative-type photoresist layer on the photocatalytic layer; 
 exposing the photoresist layer to ultraviolet rays, wherein the photocatalytic layer reacts with the ultraviolet rays passed through the photoresist layer to produce a hydroxyl radical or superoxide between the photoresist layer and the photocatalytic layer, thereby inducing cross-linking at an interface between the photoresist layer and the photocatalytic layer; 
 heat-treating the photoresist layer; and 
 developing the photoresist layer which forms the photoresist pattern. 
 
     
     
       2. The method as claimed in  claim 1 , wherein the substrate is one selected from the group consisting of a silicon substrate, a glass substrate, a metal oxide substrate, a ceramic substrate and a plastic substrate. 
     
     
       3. The method as claimed in  claim 1 , further comprising forming a thin layer on the substrate, wherein the thin layer is one selected from the group consisting of a silicon layer, a glass layer, a metal layer, a metal oxide layer, a ceramic layer and a plastic layer, and the photocatalytic layer is formed on the thin layer. 
     
     
       4. The method as claimed in  claim 1 , wherein the photocatalytic layer is one selected from the group consisting of a titanium dioxide (TiO 2 ) layer, a zinc oxide (ZnO) layer, a tin dioxide (SnO 2 ) layer, a strontium titanate (SrTiO 3 ) layer, tungsten oxide (WO 3 ) layer, a boron oxide (B 2 O 3 ) layer and an iron oxide (FeO 3 ) layer. 
     
     
       5. The method as claimed in  claim 4 , wherein the photocatalytic layer is formed on the substrate using one method selected from the group consisting of sol-gel method, a chemical vapor deposition method and a physical vapor deposition method. 
     
     
       6. The method as claimed in  claim 1 , wherein the photocatalytic layer is formed on the substrate using one method selected from the group consisting of a sol-gel method, a chemical vapor deposition method and a physical vapor deposition method. 
     
     
       7. A method of forming a photoresist pattern, the method comprising:
 forming a photocatalytic layer on a substrate, wherein the photocatalytic layer has a porous surface; 
 forming a negative-type photoresist layer on the porous surface of the photocatalytic layer; 
 exposing the photoresist layer to ultraviolet rays, wherein the photocatalytic layer reacts with the ultraviolet rays passed through the photoresist layer to produce a hydroxyl radical or superoxide between the photoresist layer and the photocatalytic layer, thereby including cross-linking at an interface between the photoresist layer and the photocatalytic layer; 
 heat-treating the photoresist layer; and 
 developing the photoresist layer which forms the photoresist pattern. 
 
     
     
       8. The method as claimed in  claim 7 , wherein the photocatalytic layer is formed by a sol-gel method. 
     
     
       9. The method as claimed in  claim 7 , wherein the substrate is one selected from the group consisting of a silicon substrate, a glass substrate, a metal oxide substrate, a ceramic substrate and a plastic substrate. 
     
     
       10. The method as claimed in  claim 7 , wherein the photocatalytic layer is one selected from the group consisting of a titanium dioxide (TiO 2 ) layer, a zinc oxide (ZnO) layer, a tin dioxide (SnO 2 ) layer, a strontium titanate (SrTiO 3 ) layer, a tungsten oxide (WO 3 ) layer, a boron oxide (B 2 O 3 ) layer, and an iron oxide (FeO 3 ) layer. 
     
     
       11. A method of forming a photoresist pattern, the method comprising:
 forming a photocatalytic layer on a substrate; 
 forming a negative-type photoresist layer on the photocatalytic layer, wherein the photoresist layer comprises an epoxy component; 
 exposing the photoresist layer to ultraviolet rays, wherein the photocatalytic layer reacts with the ultraviolet rays passed through the photoresist layer to produce a hydroxyl radical or superoxide between the photoresist layer and the photocatalytic layer, thereby inducing cross-linking at an interface between the photoresist layer and the photocatalytic layer; 
 heat-treating the photoresist layer; and 
 developing the photoresist layer which forms the photoresist pattern. 
 
     
     
       12. The method as claimed in  claim 11 , wherein the substrate is one selected from the group consisting of a silicon substrate, a glass substrate, a metal oxide substrate, a ceramic substrate and a plastic substrate. 
     
     
       13. The method as claimed in  claim 11 , wherein the photocatalytic layer is one selected from the group consisting of a titanium dioxide (TiO 2 ) layer, a zinc oxide (ZnO) layer, a tin dioxide (SnO 2 ) layer, a strontium titanate (SrTiO 3 ) layer, a tungsten oxide (WO 3 ) layer, a boron oxide (B 2 O 3 ) layer, and an iron oxide (FeO 3 ) layer. 
     
     
       14. The method as claimed in  claim 11 , wherein the photocatalytic layer is formed on the substrate using one method selected from the group consisting of a sol-gel method, a chemical vapor deposition method and a physical vapor deposition method.