Method of manufacturing semiconductor device, acid etching resistance material and copolymer

Abstract

Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R 1 is a hydrogen atom or methyl group; R 3 is a cyclic group selected from an alicyclic group and an aromatic group; R 4 is a polar group; R 2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R 5 is a hydrogen atom or methyl group).

1. A semiconductor device having a roughened side surface comprising a semiconductor substrate having a roughened side surface; a first electrode; a light emitting layer formed above the semiconductor substrate having the roughened side surface; and a second electrode; the semiconductor device being manufactured by a method comprising: forming a protective film on a part of surfaces of the semiconductor device, the semiconductor device having an side exposed surface, the protective film comprising an acid etching resistance material having a repeating unit represented by the following general formula (1): 
     
       
         
         
             
             
         
       
     
     wherein in the general formula (1), R 1  is a hydrogen atom or methyl group; R 3  is a cyclic group selected from an alicyclic group and an aromatic group; R 4  is a polar group; and R 2  is a group represented by the following general formula (2): 
     
       
         
         
             
             
         
       
     
     wherein in the general formula (2), R 5  is a hydrogen atom or methyl group; immersing the semiconductor device into an acid solution, thereby etching the exposed side surface of the semiconductor device to form the roughened side surface; and removing the protective film. 
   
   
     2. The semiconductor device according to  claim 1 , wherein the protective film covers at least the first electrode and the second electrode. 
   
   
     3. The semiconductor device according to  claim 2 , wherein the first electrode is provided on a surface of the semiconductor substrate. 
   
   
     4. The semiconductor device according to  claim 3 , wherein the second electrode is provided above the light emitting layer. 
   
   
     5. The semiconductor device according to  claim 1 , wherein the light emitting layer is formed above a part of surfaces of the semiconductor substrate. 
   
   
     6. The semiconductor device according to  claim 1 , wherein the protective film comprises a lower protective film and an upper protective film on the lower protective film. 
   
   
     7. The semiconductor device according to  claim 6 , wherein the upper protective film is formed of a novolac resin. 
   
   
     8. The semiconductor device according to  claim 1 , wherein the semiconductor device is a light emitting element. 
   
   
     9. The semiconductor device according to  claim 1 , wherein R 3  in the general formula (1) is an alicyclic group selected from adamantane, norbornane, and cyclohexane ring. 
   
   
     10. The semiconductor device according to  claim 1 , wherein R 3  in the general formula (1) is an aromatic group selected from benzene and naphthalene ring. 
   
   
     11. The semiconductor device according to  claim 1 , wherein R 4  in the general formula (1) is —OH, —COOH, and =O. 
   
   
     12. The semiconductor device according to  claim 1 , wherein the acid etching resistance material further comprises a repeating unit represented by the following general formula (1′): 
     
       
         
         
             
             
         
       
       wherein in the general formula (1′), R 1  is a hydrogen atom or methyl group; R 3′  is a cyclic group; R 4  is a polar group. 
     
   
   
     13. The semiconductor device according to  claim 12 , wherein R 3′  in the general formula (1′) is an alicyclic group. 
   
   
     14. The semiconductor device according to  claim 13 , wherein the alicyclic group is selected from adamantane, norbornane, and cyclohexane ring. 
   
   
     15. A semiconductor device having a roughened side surface comprising a semiconductor substrate having a roughened side surface; a first electrode; a light emitting layer formed above the semiconductor substrate having the roughened side surface; and a second electrode; the semiconductor device being manufactured by a method comprising: forming a lower protective film above a part of surfaces of the semiconductor device using a first solution containing a first solvent and an acid etching resistance material, the semiconductor device having an exposed side surface, the lower protective film being insoluble to a second solvent, the acid etching resistance material having a repeating unit represented by the following general formula (1): 
     
       
         
         
             
             
         
       
     
     wherein in the general formula (1), R 1  is a hydrogen atom or methyl group; R 3  is a cyclic group selected from an alicyclic group and an aromatic group; R 4  is a polar group; and R 2  is a group represented by the following general formula (2): 
     
       
         
         
             
             
         
       
     
     wherein in the general formula (2), R 5  is a hydrogen atom or methyl group; forming an upper protective film using a second solution containing the second solvent on the lower protective film, thereby obtaining a protective film formed of a laminated structure comprising the lower protective film and the upper protective film; immersing the semiconductor device into an acid solution, thereby etching the exposed side surface of the semiconductor device to form the roughened side surface; and removing the protective film. 
   
   
     16. The semiconductor device according to  claim 15 , wherein the second solvent comprises propyleneglycol monomethyl ether acetate. 
   
   
     17. The semiconductor device according to  claim 15 , wherein the upper protective film is formed of a novolac resin. 
   
   
     18. The semiconductor device according to  claim 15 , wherein R 3  in the general formula (1) is an alicyclic group selected from adamantane, norbornane, and cyclohexane ring. 
   
   
     19. The semiconductor device according to  claim 15 , wherein the acid etching resistance material further comprises a repeating unit represented by the following general formula (1′) 
     
       
         
         
             
             
         
       
       wherein in the general formula (1′), R 1  is a hydrogen atom or methyl group; R 3′  is a cyclic group; R 4  is a polar group.