P
US7724523B2ExpiredUtilityPatentIndex 92

Electric power converter and mounting structure of semiconductor device

Assignee: DENSO CORPPriority: Aug 21, 2003Filed: Mar 11, 2008Granted: May 25, 2010
Est. expiryAug 21, 2023(expired)· nominal 20-yr term from priority
Inventors:ISHIYAMA HIROSHI
H10W 90/736H10W 72/07354H10W 72/347H10W 90/00H10W 40/613H10W 40/47H02M 7/003
92
PatentIndex Score
25
Cited by
39
References
6
Claims

Abstract

An electric power converter has a main circuit section including a semiconductor module and a cooling device; a control circuit substrate section electrically connected to a signal terminal of the semiconductor module, and having a control circuit; and a power wiring section connected to a main electrode terminal of the semiconductor module. The main circuit section is interposed between the control circuit substrate section and the power wiring section.

Claims

exact text as granted — not AI-modified
1. A mounting structure of a semiconductor device, the structure comprising:
 a semiconductor module including a semiconductor element for supplying electricity, a first and a second electrode plates disposed on both sides of the semiconductor element, a connecting terminal connected to a control circuit for controlling the semiconductor element, and a resin mold having electric insulation for sealing the semiconductor element and the first and the second electrode plates; and 
 a first and a second holding members having electric conductivity for holding the semiconductor module from both sides of the semiconductor module through a first and a second insulation members as a dielectric member, wherein 
 the first or second electrode plate, the first or second holding member, the first or second insulation member provide a bypass capacitor for reducing noise. 
 
   
   
     2. The mounting structure of a semiconductor device according to  claim 1 , wherein
 a part of each of the first and the second electrode plates is exposed, and 
 each of the first and the second insulation members is an insulation plate disposed between the exposed part of the first or the second electrode plate and the first or the second holding member. 
 
   
   
     3. The mounting structure of a semiconductor device according to  claim 1 , wherein
 a part of each of the first and the second electrode plates is exposed, and 
 each of the first and the second insulation members is an insulation coating film integrated with the resin mold and covering the exposed part of the first or the second electrode plate. 
 
   
   
     4. The mounting structure of a semiconductor device according to  claim 1 , wherein
 a part of each of the first and the second electrode plates is exposed, and 
 each of the first and the second insulation members is an insulation coating film integrated with the resin mold and facing the exposed part of the first or the second electrode plate. 
 
   
   
     5. The mounting structure of a semiconductor device according to  claim 2 , wherein the first and the second holding members are grounded. 
   
   
     6. The mounting structure of a semiconductor device according to  claim 2 , wherein
 cooling medium having electric conductivity flows inside of the first and the second holding members, and 
 the cooling medium is grounded.

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