P
US7728496B2ExpiredUtilityPatentIndex 41

Electron emission device having curved surface electron emission region

Assignee: SAMSUNG SDI CO LTDPriority: Feb 26, 2004Filed: Feb 24, 2005Granted: Jun 1, 2010
Est. expiryFeb 26, 2024(expired)· nominal 20-yr term from priority
Inventors:CHOI YONG SOOLEE SANG-JOLEE BYONG-GONLEE CHUN-GYOO
H01J 3/021E05D 5/06E05D 3/02E05Y 2900/148H01J 2329/00
41
PatentIndex Score
0
Cited by
11
References
5
Claims

Abstract

An electron emission device includes first and second substrates opposing one another with a gap therebetween. Cathode electrodes are formed on the first substrate. An insulation layer is formed covering the cathode electrodes and having apertures. Gate electrodes are formed on the insulation layer and have apertures at locations corresponding to the locations of the apertures of the insulation layer so as to expose the cathode electrodes. Electron emission regions are formed in the apertures on the cathode electrodes. An anode electrode is formed on the second substrate. An outer surface of the electron emission regions is formed with a shape similar to a shape of equipotential lines formed when there is no electron emission region in the apertures, and predetermined drive voltages are applied to the electrodes.

Claims

exact text as granted — not AI-modified
1. An electron emission device, comprising:
 a first substrate and a second substrate provided in opposition to one another with a predetermined gap therebetween; 
 a plurality of cathode electrodes formed on a surface of the first substrate opposing the second substrate; 
 an insulation layer formed so as to cover the cathode electrodes and having a plurality of apertures that pass therethrough formed at predetermined locations; 
 a plurality of gate electrodes formed on the insulation layer and having a plurality of apertures that pass therethrough, the apertures of the gate electrodes being formed at areas corresponding to the apertures of the insulation layer, and the apertures of the gate electrodes and the apertures of the insulation layer exposing the cathode electrodes; 
 a plurality of electron emission regions formed in the apertures at areas wherein the cathode electrodes are exposed; and 
 an anode electrode formed on a surface of the second substrate opposing the first substrate; 
 wherein a surface of the electron emission regions opposite a surface adjacent to the cathode electrodes is curved with a predetermined radius of curvature; 
 wherein the electron emission regions are positioned within the apertures and in contact with the insulation layer; and 
 wherein the surface of the electron emission regions opposite a surface adjacent to the cathode electrodes is formed with a shape similar to an overall shape of equipotential lines formed in the apertures when there is no electron emission region in the apertures, and predetermined drive voltages are applied to the cathode electrodes, the gate electrodes and the anode electrode. 
 
   
   
     2. The electron emission device of  claim 1 , wherein the electron emission regions are made of a nanometer-sized material. 
   
   
     3. The electron emission device of  claim 2 , wherein the nanometer-sized material is selected from a group consisting of nano-tube, nano-fiber, nano-wire, and a combination of these materials. 
   
   
     4. The electron emission device of  claim 1 , wherein the electron emission regions are made of a carbon-based material. 
   
   
     5. The electron emission device of  claim 4 , wherein the carbon-based material is selected from a group consisting of carbon nanotubes, graphite, diamond, diamond-like carbon, C 60  (Fullerene), and a combination of these materials.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.