US7732788B2ActiveUtilityA1

Radiation image converting panel, scintillator panel and radiation image sensor

65
Assignee: HAMAMATSU PHOTONICS KKPriority: Oct 23, 2007Filed: Oct 23, 2007Granted: Jun 8, 2010
Est. expiryOct 23, 2027(~1.3 yrs left)· nominal 20-yr term from priority
H10F 30/29G01T 1/20
65
PatentIndex Score
1
Cited by
46
References
12
Claims

Abstract

For a radiation image converting panel according to the present invention, a converting portion that converts a radiation image to an optical image is formed on a support for which a dielectric multilayer film is formed on a metal reflector, and the dielectric multilayer film includes at least a first dielectric layer that is in contact with the metal reflector and a second dielectric layer that is formed on the first dielectric layer and has a higher refractive index than that of the first dielectric film layer to light emitted by the converting portion.

Claims

exact text as granted — not AI-modified
1. A radiation image converting panel including a converting portion that converts a radiation image to an optical image on a support,
 the support comprising: 
 a metal reflector; and 
 a dielectric film mirror including at least a first dielectric layer which is in contact with the metal reflector and formed thereon and a second dielectric layer which is formed on the first dielectric layer and has a higher refractive index than that of the first dielectric layer to light of an optical image outputted from the converting portion, wherein the converting portion is formed on the dielectric film mirror side. 
 
   
   
     2. A scintillator panel for which a scintillator composed of a plurality of needle crystals is formed on a support, the support comprising:
 a metal reflector; and 
 a dielectric film mirror including at least a first dielectric layer which is in contact with the metal reflector and formed thereon and a second dielectric layer which is formed on the first dielectric layer and has a higher refractive index than that of the first dielectric layer to light emitted from the scintillator, wherein the scintillator is formed on the dielectric film mirror side. 
 
   
   
     3. The scintillator panel according to  claim 2 , wherein the first
 dielectric layer contains SiO2, and the second dielectric layer contains at least one material from TiO 2 , Nb 2 O 5 , Ta 2 O 5 , HfO 2 , and ZrO 2 . 
 
   
   
     4. The scintillator panel according to  claim 3 , wherein the dielectric film mirror is formed by laminating three or more layers of the first dielectric layer and the second dielectric layer alternately. 
   
   
     5. The scintillator panel according to  claim 4 , wherein a number of laminations of the dielectric film mirror is 10 layers or less. 
   
   
     6. The scintillator panel according to  claim 4 , wherein a thickness of the dielectric film mirror as a whole is 1 μm or less. 
   
   
     7. The scintillator panel according to  claim 2 , further comprising a transparent organic film which is formed, on the dielectric film mirror, at least between the dielectric film mirror and the scintillator, and has a lower refractive index than that of the second dielectric layer to light emitted by the scintillator. 
   
   
     8. The scintillator panel according to  claim 2 , wherein the metal reflector is a thin metal film. 
   
   
     9. The scintillator panel according to  claim 8 , further comprising a supporting substrate that supports the metal reflector. 
   
   
     10. The scintillator panel according to  claim 2 , wherein the metal reflector is a metal substrate. 
   
   
     11. The scintillator panel according to  claim 8  or  10 , wherein the metal reflector is formed of aluminum, silver, or gold. 
   
   
     12. A radiation image sensor comprising:
 a radiation image converting panel for which a converting portion that converts a radiation image to an optical image is formed, of a support including a metal reflector and a dielectric film mirror including at least a first dielectric layer which is in contact with the metal reflector and formed thereon and a second dielectric layer which is formed on the first dielectric layer and has a higher refractive index than that of the first dielectric layer to light of the optical image formed on the first dielectric film layer, on the dielectric film mirror side; and 
 an image pickup device that converts an optical image outputted from the converting portion to an electrical signal.

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