Manufacturing method for photo mask

Abstract

A method for manufacturing a photo mask includes forming a mask pattern over a transparent substrate; forming a photoresist over the transparent substrate; subjecting the photoresist to an exposure light from the rear of the transparent substrate to form a photoresist pattern on the mask pattern; and correcting a line width in the mask pattern using the photoresist pattern as a mask.

1. A method for manufacturing a photo mask comprising:
 forming a mask pattern over a first surface of a transparent substrate, wherein the transparent substrate has a first surface and a second surface opposite to each other; 
 forming a positive photoresist over the first surface transparent substrate where the mask pattern is formed; 
 irradiating an exposure light to the second surface of the substrate with a predetermined dose and developing the photoresist thereby forming a photoresist pattern having a desired line width on the mask pattern; and 
 correcting a line width in the mask pattern using the photoresist pattern as a mask. 
 
     
     
       2. The method according to  claim 1 , wherein correcting a line width in the mask pattern comprises etching the mask pattern using the photoresist pattern as a mask. 
     
     
       3. The method according to  claim 1 , wherein the mask pattern comprises a phase shift film pattern. 
     
     
       4. The method according to  claim 1 , wherein the mask pattern comprises a phase shift film pattern and a light shielding film pattern formed on the transparent substrate. 
     
     
       5. The method according to  claim 4 , wherein the phase shift film pattern comprises a MoSiN film, the light shielding film pattern comprises chromium film, and the transparent substrate comprises quartz. 
     
     
       6. The method according to  claim 1 , wherein correcting a line width in the mask pattern comprises correcting the mask pattern in regions divided on the transparent substrate in a separate manner.