Semiconductor device, method of manufacturing the same

Abstract

A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.

1. A semiconductor device, comprising:
 a circuit board; and 
 a semiconductor chip, 
 wherein the circuit board includes a multilayer interconnection structure; a capacitor structure including a thin film capacitor on the multilayer interconnection structure; an insulating film covering the capacitor structure; through vias passing through the capacitor structure so as to be electrically connected to the thin film capacitor and the multilayer interconnection structure; 
 the semiconductor chip is electrically connected to the through vias on the circuit board; and 
 the capacitor structure includes a Si substrate on the multilayer interconnection structure; through holes in which the through vias are formed, the through holes passing through the Si substrate; and the thin film capacitor formed on the Si substrate, the Si substrate having a thickness less than a diameter of the through holes. 
 
     
     
       2. The semiconductor device as claimed in  claim 1 , wherein the thin film capacitor comprises:
 at least three electrode layers; and 
 a dielectric film provided between each adjacent two of the at least three electrode layers. 
 
     
     
       3. The semiconductor device as claimed in  claim 1 , wherein the circuit board further comprises:
 at least one additional capacitor structure so that the capacitor structure and the at least one additional capacitor structure are stacked between the multilayer interconnection structure and the insulating film. 
 
     
     
       4. The semiconductor device as claimed in  claim 1 , further comprising:
 at least one additional semiconductor chip,
 wherein the capacitor structure is provided for each of the semiconductor chips. 
 
 
     
     
       5. The semiconductor device as claimed in  claim 1 , wherein the capacitor structure is smaller in area than the semiconductor chip. 
     
     
       6. The semiconductor device as claimed in  claim 1 , wherein the thin film capacitor is a multilayer thin film capacitor including at least three electrode layers and a dielectric film provided between each adjacent two of the at least three electrode layers, so that the thin film capacitor includes a plurality of capacitors connected in parallel between the through vias with first ones of the through vias being electrically connected to odd-numbered ones of the at least three electrode layers from a side of the Si substrate and a second one or ones of the through vias being electrically connected to one or more even-numbered ones of the at least three electrode layers from the side of the Si substrate. 
     
     
       7. The semiconductor device as claimed in  claim 1 , wherein the Si substrate is 30 μm to 100 μm in thickness.