US7810228B2ActiveUtilityA1

Method for manufacturing a magneto-resistance effect element

95
Assignee: TOSHIBA KKPriority: Jul 7, 2006Filed: Jul 5, 2007Granted: Oct 12, 2010
Est. expiryJul 7, 2026(expired)· nominal 20-yr term from priority
G11B 5/39Y10T29/49032Y10T29/49046Y10T29/49048Y10T29/49052Y10T29/49043Y10T29/49044Y10T29/49041H10B 61/10H10B 61/22H10N 50/01
95
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1
Claims

Abstract

An example method for manufacturing a magneto-resistance effect element involves irradiating inert gas ions to enhance an adhesive force between an area around an oxide layer and a metallic layer.

Claims

exact text as granted — not AI-modified
1. A method for manufacturing a magneto-resistance effect element, comprising steps of:
 forming a fixed magnetization layer; 
 forming a free magnetization layer; and 
 forming a spacer layer with an insulating layer and a non-magnetic metallic path penetrating through said insulating layer, comprising steps of:
 forming a first non-magnetic metallic layer; 
 forming a metallic layer on a surface of said first non-magnetic metallic layer; 
 irradiating, onto said metallic layer, ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, Kr so as to convert said metallic layer into said insulating layer and said non-magnetic metallic path containing said first non-magnetic metallic layer; 
 forming a second non-magnetic metallic layer on said non-magnetic metallic path; and 
 irradiating ions or plasma onto said fixed magnetization layer.

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