P
US7820486B2ActiveUtilityPatentIndex 66

Method of fabricating a semiconductor device having a heat sink with an exposed surface

Assignee: PANASONIC CORPPriority: Dec 3, 2007Filed: Dec 2, 2008Granted: Oct 26, 2010
Est. expiryDec 3, 2027(~1.4 yrs left)· nominal 20-yr term from priority
Inventors:OHTANI KATSUMI
H10W 90/756H10W 90/754H10W 90/736H10W 90/734H10W 90/724H10W 74/15H10W 74/00H10W 72/07251H10W 72/884H10W 72/877H10W 72/552H10W 72/0198H10W 72/073H10W 72/072H10W 72/20H10W 74/117H10W 74/01H10W 40/778H10W 72/5449H10W 40/228
66
PatentIndex Score
7
Cited by
8
References
24
Claims

Abstract

A method includes: mounting a plurality of semiconductor elements on a substrate having wirings; connecting electrically electrodes of the semiconductor elements and the wirings; sealing the semiconductor elements with a resin, which is carried out by bringing a thermal conductor having a concavity and the substrate to be in contact with each other so that the semiconductor elements are positioned within the concavity and by filling the concavity with the resin; and separating respective semiconductor elements 1 . In the resin-sealing step, in a state where the thermal conductor is arranged with its concavity facing up and the concavity of the thermal conductor is filled with a liquid resin, the semiconductor elements are dipped in the liquid resin in the concavity and the liquid resin is solidified. Due to these steps, a semiconductor device can be manufactured without experiencing troubles such as short circuit of the metal thin wires or imperfect filling of resin during the manufacturing steps, and thus semiconductor devices with stable quality can be manufactured.

Claims

exact text as granted — not AI-modified
1. A method for manufacturing a semiconductor device, comprising:
 mounting a plurality of semiconductor elements on a substrate having wirings; 
 connecting electrically electrodes of the semiconductor elements and the wirings; 
 sealing the semiconductor elements with a resin, which is carried out by bringing a thermal conductor having a concavity and the substrate to be in contact with each other so that the semiconductor elements are positioned within the concavity and by filling the concavity with the resin; and 
 separating the respective semiconductor elements, 
 wherein in the resin-sealing step, in a state where the thermal conductor is arranged with its concavity facing up and the concavity of the thermal conductor is filled with a liquid resin, the semiconductor elements are dipped in the liquid resin in the concavity and the liquid resin is solidified. 
 
     
     
       2. The method for manufacturing a semiconductor device according to  claim 1 , wherein the state where the concavity of the thermal conductor is filled with the liquid resin is obtained by injecting the liquid resin into the concavity of the thermal conductor. 
     
     
       3. The method for manufacturing a semiconductor device according to  claim 1 , wherein the state where the concavity of the thermal conductor is filled with the liquid resin is obtained by casting a solid resin into the concavity of the thermal conductor and heating the thermal conductor so as to melt the solid resin. 
     
     
       4. The method for manufacturing a semiconductor device according to  claim 1 , wherein the thermal conductors before the separation step is provided as a group of joined thermal conductors, and the separation step is carried out by cutting the substrate and the thermal conductor group simultaneously. 
     
     
       5. The method for manufacturing a semiconductor device according to  claim 4 , wherein the thermal conductor group comprises the thermal conductors joined in a strip. 
     
     
       6. The method for manufacturing a semiconductor device according to  claim 4 , wherein the thermal conductor group comprises the thermal conductors joined in a matrix. 
     
     
       7. The method for manufacturing a semiconductor device according to  claim 4 , wherein the thermal conductor group has slits formed in the joints between the thermal conductors. 
     
     
       8. The method for manufacturing a semiconductor device according to  claim 1 , wherein the thermal conductor before the separation step is provided as a group of joined thermal conductors, and the separation step is carried out by cutting the substrate, the thermal conductor group and the sealing resin simultaneously. 
     
     
       9. The method for manufacturing a semiconductor device according to  claim 8 , wherein the thermal conductor group comprises the thermal conductors joined in a strip. 
     
     
       10. The method for manufacturing a semiconductor device according to  claim 8 , wherein the thermal conductor group comprises the thermal conductors joined in a matrix. 
     
     
       11. The method for manufacturing a semiconductor device according to  claim 8 , wherein the thermal conductor group has slits formed in the joints between the thermal conductors. 
     
     
       12. The method for manufacturing a semiconductor device according to  claim 1 , wherein the plural semiconductor elements are sealed simultaneously in the resin-sealing step. 
     
     
       13. A method for manufacturing a semiconductor device, comprising:
 mounting a plurality of semiconductor elements on a lead frame; 
 connecting electrically electrodes of the semiconductor elements and the lead frame; 
 sealing the semiconductor elements with a resin, which is carried out by bringing a thermal conductor having a concavity and the lead frame to be in contact with each other so that the semiconductor elements are positioned within the concavity and by filling the concavity with the resin; 
 separating the respective semiconductor elements, 
 wherein in the resin-sealing step, in a state where the thermal conductor is arranged with its concavity facing up and the concavity of the thermal conductor is filled with a liquid resin, the semiconductor elements are dipped in the liquid resin in the concavity and the liquid resin is solidified. 
 
     
     
       14. The method for manufacturing a semiconductor device according to  claim 13 , wherein the state where the concavity of the thermal conductor is filled with a liquid resin is obtained by injecting the liquid resin into the concavity of the thermal conductor. 
     
     
       15. The method for manufacturing a semiconductor device according to  claim 13 , wherein the state where the concavity of the thermal conductor is filled with the liquid resin is obtained by casting a solid resin into the concavity of the thermal conductor and heating the thermal conductor so as to melt the solid resin. 
     
     
       16. The method for manufacturing a semiconductor device according to  claim 13 , wherein the thermal conductor before the separation step is provided as a group of joined thermal conductors, and the separation step is carried out by cutting the lead frame and the thermal conductor group simultaneously. 
     
     
       17. The method for manufacturing a semiconductor device according to  claim 16 , wherein the thermal conductor group comprises the thermal conductors joined in a strip. 
     
     
       18. The method for manufacturing a semiconductor device according to  claim 16 , wherein the thermal conductor group comprises the thermal conductors joined in a matrix. 
     
     
       19. The method for manufacturing a semiconductor device according to  claim 16 , wherein the thermal conductor group has slits formed in the joints between the thermal conductors. 
     
     
       20. The method for manufacturing a semiconductor device according to  claim 13 , wherein the thermal conductor before the separation step is provided as a group of joined thermal conductors, and the separation step is carried out by cutting the lead frame, the thermal conductor group and the solidified resin simultaneously. 
     
     
       21. The method for manufacturing a semiconductor device according to  claim 20 , wherein the thermal conductor group comprises the thermal conductors joined in a strip. 
     
     
       22. The method for manufacturing a semiconductor device according to  claim 20 , wherein the thermal conductor group comprises the thermal conductors joined in a matrix. 
     
     
       23. The method for manufacturing a semiconductor device according to  claim 20 , wherein the thermal conductor group has slits formed in the joints between the thermal conductors. 
     
     
       24. The method for manufacturing a semiconductor device according to  claim 13 , wherein the plural semiconductor elements are sealed simultaneously in the resin-sealing step.

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