P
US7868536B2ActiveUtilityPatentIndex 84

Organic light emitting device

Assignee: GEN ELECTRICPriority: Oct 27, 2008Filed: Oct 27, 2008Granted: Jan 11, 2011
Est. expiryOct 27, 2028(~2.3 yrs left)· nominal 20-yr term from priority
Inventors:AURONGZEB DEEDER
H10K 50/82H10K 50/81H10K 50/171H10K 2102/351H10K 50/87
84
PatentIndex Score
13
Cited by
13
References
25
Claims

Abstract

An organic light emitting device including an anode including a lanthanide oxide. The lanthanide oxide is doped with a conductive material including rubidium, titanium, or combinations thereof. The organic light emitting device further includes a cathode, an organic hole transport layer intermediate the anode and cathode, and an electron injection layer intermediate the anode and cathode.

Claims

exact text as granted — not AI-modified
1. An organic light emitting device comprising:
 an anode, comprising a lanthanide oxide wherein said oxide is doped with a conductive material selected from the group consisting of rubidium, titanium, and combinations thereof; 
 a cathode; 
 an organic hole transport layer intermediate the anode and cathode; and 
 an electron injection layer intermediate the anode and cathode. 
 
     
     
       2. The organic light emitting device of  claim 1 , further including an organic light emission layer intermediate the anode and cathode. 
     
     
       3. The organic light emitting device of  claim 2 , wherein said organic light emission layer has a thickness which varies across the layer. 
     
     
       4. The organic light emitting device of  claim 3 , wherein said light emission layer has a maximum thickness of up to 250 nm. 
     
     
       5. The organic light emitting device of  claim 3 , wherein said light emission layer has a minimum thickness of at least 5 nm. 
     
     
       6. The organic light emitting device of  claim 3 , wherein a ratio between a thickest portion and thinnest portion of said light emission layer is at least 2:1. 
     
     
       7. The organic light emitting device of  claim 1 , wherein said light emission layer comprises tris(8-hydroxyquinoline) aluminum doped with a material selected from the group consisting of platinum octaethylporphyrin, nickel octaethylporphyrin, and chromium octaethylporphyrin, and mixtures thereof. 
     
     
       8. The organic light emitting device of  claim 1 , wherein said lanthanide oxide includes a oxide selected from the group consisting of La 2 O 3 , Tb 4 O 7 , Er 2 O 3 , Lu 2 O 3 , Nd 0.5  Sr 0.5 MnO 3 , Nd 0.5 Ca 0.5 MnO 3 , Sm 0.5 Ca 0.5 MnO 3 , Dy 0.5 Ca 0.5 MnO 3  and Ho 0.5 Ca 0.5 MnO 3 , LaNi x Fe 1-x O 3  where 0<x<0.9, La 1-y Nd y Fe 0.5 Cr 0.5 O 3  where y=0.10, 0.15 or 0.20, La 0.7  Sr 0.3 Mn 1-z Ti z O 3  where z=0, 0.10, 0.20, or 0.30, M 3 Fe 4 V 6 O 24  where M is selected from Zn or Mn, and combinations thereof. 
     
     
       9. The organic light emitting device of  claim 1 , wherein said anode has a thickness of at least 5 nm. 
     
     
       10. The organic light emitting device of  claim 1 , wherein said anode has a thickness of no more than 200 nm. 
     
     
       11. The organic light emitting device of  claim 1 , wherein said electron injection layer includes a magnetic metal halide. 
     
     
       12. The organic light emitting device of  claim 11 , wherein said magnetic metal halide comprises a halide of a metal selected from the group consisting of nickel, silver, chromium, manganese, cesium, iron and combinations thereof. 
     
     
       13. The organic light emitting device of  claim 1 , wherein said electron injection layer has a thickness of at least 0.1 nm. 
     
     
       14. The organic light emitting device of  claim 1 , wherein said cathode comprises hafnium oxynitride. 
     
     
       15. The organic light emitting device of  claim 14 , wherein the cathode further comprises a material selected from the group consisting of aluminum, nickel, titanium, alloys of aluminum, nickel, and titanium, and conductive polymers. 
     
     
       16. The organic light emitting device of  claim 15 , wherein said conductive polymer is selected from a group consisting of polythiophene, poly(p-phenylene vinylenes), poly(3-alkyl thiophenes), nickelphthalocyanine, and combinations thereof. 
     
     
       17. The organic light emitting device of  claim 1 , wherein said cathode has a thickness of between 50 and 200 nm. 
     
     
       18. The organic light emitting device of  claim 1 , wherein an interface layer spaces said anode from said hole transport layer. 
     
     
       19. The organic light emitting device of  claim 1 , wherein said organic light emitting device is supported by a transparent substrate. 
     
     
       20. The organic light emitting device of  claim 19 , wherein said substrate is made of glass. 
     
     
       21. The organic light emitting device of  claim 19 , further including a compliance and/or heat absorbing layer between said substrate and said anode. 
     
     
       22. A light source comprising at least one organic light emitting device according to  claim 1 . 
     
     
       23. A method of manufacturing an organic light emitting device comprising:
 forming an anode comprising a lanthanide oxide doped with at least one of titanium and rubidium; 
 forming a cathode; 
 disposing an organic hole transport layer intermediate said anode and cathode; 
 disposing an organic light emission layer intermediate said anode and cathode; and 
 disposing an electron injection layer intermediate said anode and cathode. 
 
     
     
       24. An organic light emitting device comprising:
 an anode comprising a lanthanide oxide wherein said oxide is doped with a conductive material selected from the group consisting of rubidium, titanium, and combinations thereof; 
 a cathode including hafnium oxynitride; 
 an organic hole transport layer intermediate the anode and cathode; 
 an organic light emission layer intermediate the anode and cathode; and 
 an electron injection layer intermediate the anode and cathode. 
 
     
     
       25. An organic light emitting device comprising:
 an anode comprising a lanthanide oxide wherein said oxide is doped with a conductive material selected from the group consisting of rubidium, titanium, and combinations thereof; 
 a cathode; 
 an organic hole transport layer intermediate the anode and cathode; 
 an organic light emission layer intermediate the anode and cathode, wherein said organic light emission layer has a gradient, in which the thickness varies across the layer; and 
 an electron injection layer intermediate the anode and cathode.

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