Fringe field switching type liquid crystal display array substrate and method of manufacturing the same

Abstract

An array substrate comprises a scanning line; a data line crossing the scanning line; a pixel electrode; a common electrode; and a Thin Film Transistor comprising a gate electrode connected to the scanning line, a source electrode connected to the data line and a drain electrode connected to the pixel electrode, the drain electrode and the scanning line forming a first capacitor therebetween. The array substrate further comprises an auxiliary capacitor which is in parallel with the first capacitor.

1. A fringe field switching type liquid crystal display array substrate, comprising:
 a scanning line; 
 a data line crossing the scanning line; 
 a pixel electrode; 
 a common electrode, the common electrode and the pixel electrode forming a storage capacitor; 
 a thin film transistor comprising a gate electrode connected to the scanning line, a source electrode connected to the data line and a drain electrode connected to the pixel electrode, the drain electrode and the scanning line forming a first capacitor therebetween; 
 wherein the array substrate further comprises an auxiliary capacitor in parallel with the first capacitor and adapted for counteracting a variation in the storage capacitor and further for decreasing a variation in feed through voltage, the auxiliary capacitor comprises a first electrode and a second electrode, the first electrode being formed in the same processing with the pixel electrode, the pixel electrode is provided with stripe-like slits, and the first electrode comprises an opening or slot portion with the stripe-like slits. 
 
     
     
       2. The fringe field switching type liquid crystal display array substrate according to  claim 1 , wherein a material of the first electrode is the same as a material of the pixel electrode. 
     
     
       3. The fringe field switching type liquid crystal display array substrate according to  claim 2 , wherein the material of the pixel electrode is a transparent conductive material. 
     
     
       4. The fringe field switching type liquid crystal display array substrate according to  claim 1 , wherein the second electrode of the auxiliary capacitor is formed by the scanning line. 
     
     
       5. The fringe field switching type liquid crystal display array substrate according to  claim 4 , wherein the first electrode overlaps at least a part of the scanning line. 
     
     
       6. The fringe field switching type liquid crystal display array substrate according to  claim 1 , wherein the second electrode of the auxiliary capacitor is formed by a conductor electrically connected to the scanning line. 
     
     
       7. The fringe field switching type liquid crystal display array substrate according to  claim 1 , wherein the first electrode is a portion extending from the pixel electrode. 
     
     
       8. The fringe field switching type liquid crystal display array substrate according to  claim 1 , wherein one end of the first electrode is connected to the drain electrode of the thin film transistor. 
     
     
       9. A method for manufacturing the fringe field switching type liquid crystal display array substrate according to  claim 1  comprising:
 a) forming a common electrode on a substrate; 
 b) forming a scanning line and a common electrode bus line on the substrate the common electrode bus line being electrically connected with the common electrode; 
 c) forming a gate electrode insulating layer and a semiconductor layer in order above the common electrode, the common electrode bus line and the scanning line on the substrate; 
 d) forming a data line, a source electrode and a drain electrode of Thin Film Transistor on the substrate, the source electrode being electrically connected with the data line; 
 e) forming a passivation layer on the substrate, and forming a through-hole in the passivation layer; and 
 f) forming a pixel electrode and an auxiliary capacitor electrode over the passivation layer, and forming slits in the pixel electrode. 
 
     
     
       10. The method according to  claim 9 , wherein the auxiliary capacitor electrode forms an auxiliary capacitor with at least a part of the scanning line, the auxiliary capacitor being in parallel with a first capacitor formed between the drain electrode and the scanning line. 
     
     
       11. The method according to  claim 9 , wherein a material of the auxiliary capacitor electrode is same with that of the pixel electrode. 
     
     
       12. The method according to  claim 9 , wherein the auxiliary capacitor electrode comprises an opening or slot portion. 
     
     
       13. The method according to  claim 9 , wherein the auxiliary capacitor electrode overlaps at least a part of the scanning line.