Method for making a silicon quantum dot fluorescent lamp

Abstract

A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

1. A method for making a silicon quantum dot fluorescent lamp, the method comprising the steps of:
 providing a first substrate; 
 coating the first substrate with a buffer layer of titanium; 
 coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum; and 
 
       providing a plurality of nanometer discharging elements on the catalytic layer so that the first substrate, the buffer layer, the catalytic layer and the nanometer discharging elements form a cathode assembly;
 providing a second substrate; 
 coating the second substrate with a silicon quantum dot fluorescent film; 
 coating the silicon quantum dot fluorescent film with a metal film so that the second substrate, the silicon quantum dot fluorescent film and the metal film form an anode assembly; and 
 providing a high voltage source between the cathode and anode assemblies to generate a field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dot fluorescent film to emit visible light. 
 
     
     
       2. The method according to  claim 1 , wherein the first substrate is made of a material selected from a group consisting of silicon, glass, ceramic and stainless steel. 
     
     
       3. The method according to  claim 1 , wherein the nanometer discharging elements are nanometer carbon tubes provided in a chemical vapor deposition process in which a carbon source is selected from a group consisting of ethane and methane. 
     
     
       4. The method according to  claim 1 , wherein the nanometer discharging elements are nanometer silicon wires provided in a chemical vapor deposition process in which a silicon source is selected from a group consisting of monosilane and dichlorosilane. 
     
     
       5. The method according to  claim 1 , wherein the second substrate is transparent. 
     
     
       6. The method according to  claim 1 , wherein the second substrate is made of a material selected from a group consisting of glass, quartz and sapphire. 
     
     
       7. The method according to  claim 1 , wherein the silicon quantum dot fluorescent film is made of a material selected from a group consisting of polymer, silicon oxide, silicon nitride and silicon carbide. 
     
     
       8. The method according to  claim 1 , wherein the silicon quantum dot fluorescent film is made with a high dielectric coefficient. 
     
     
       9. The method according to  claim 1 , wherein the silicon quantum dots are made of various sizes of 1 to 10 nanometers. 
     
     
       10. The method according to  claim 1 , wherein the metal film is a patterned metal film. 
     
     
       11. The method according to  claim 1 , wherein the metal film is a patterned metal mesh. 
     
     
       12. The method according to  claim 1 , wherein the metal film is made of a material selected from a group consisting of gold, silver, copper and aluminum. 
     
     
       13. The method according to  claim 1 , wherein the high voltage source generates a voltage difference between the cathode and anode assemblies to generate a field-effect electric field to accelerate the electrons in the cathode assembly. 
     
     
       14. The method according to  claim 1 , wherein the first substrate is coated with the buffer layer by a device selected from a group consisting of an e-gun evaporation system or a sputtering system. 
     
     
       15. The method according to  claim 1 , wherein the buffer layer is coated with the catalytic layer by a device selected from a group consisting of an e-gun evaporation system or a sputtering system. 
     
     
       16. The method according to  claim 1 , wherein the second substrate is coated with the silicon quantum dot fluorescent film in a chemical vapor deposition process.