Semiconductor device having groove-shaped via-hole

Abstract

The semiconductor device has insulating films 40, 42 formed over a substrate 10 ; an interconnection 58 buried in at least a surface side of the insulating films 40, 42 ; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66 a having a pattern bent at a right angle; and buried conductors 70, 72 a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66 a . A groove-shaped via-hole 66 a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66 . Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

1. A semiconductor device comprising:
 a first insulating film formed above a substrate; 
 a first interconnection buried in at least a surface side of the first insulating film; 
 a second insulating film formed above the first insulating film with the first interconnection buried in, and including a groove-shaped via-hole having a pattern which is bent at a right angle formed in a region above the first interconnection; and 
 a first conductor filled in the groove-shaped via-hole, 
 wherein a width at a bent portion of the pattern of the groove-shaped via-hole is smaller than a width at the bent portion of the pattern of the groove-shaped via-hole when the groove-shaped via-hole is bent once at 90°. 
 
     
     
       2. A semiconductor device comprising:
 a first insulating film formed above a substrate; 
 a first interconnection buried in at least a surface side of the first insulating film, 
 a second insulating film formed above the first insulating film with the first interconnection buried in, and including a groove-shaped via-hole having a pattern which is bent at a right angle formed in a region above the first interconnection; and 
 a first conductor material filled in the groove-shaped via-hole, 
 wherein the groove-shaped via-hole is bent a plurality of times at a larger angle than 90° at a bent portion of the pattern. 
 
     
     
       3. The semiconductor device according to  claim 2 , wherein
 the groove-shaped via-hole is bent at the bent portion of the pattern twice each at 135°. 
 
     
     
       4. The semiconductor device according to  claim 2 , wherein a pattern of the first interconnection is bent in substantially the same way as the pattern of the groove-shaped via-hole. 
     
     
       5. The semiconductor device according to  claim 2 , wherein the first interconnection is bent at 90°. 
     
     
       6. The semiconductor device according to  claim 2 , wherein a plurality of groove-shaped via-holes arranged adjacent to each other is formed in the second insulating film. 
     
     
       7. The semiconductor device according to  claim 1  wherein
 the groove-shaped via-hole is formed at the outermost of the groove-shaped via pattern. 
 
     
     
       8. The semiconductor device according to  claim 1 , wherein
 the groove-shaped via pattern is formed above substantially the same way as the first interconnection. 
 
     
     
       9. A semiconductor device comprising:
 a first insulating film formed above a substrate; 
 a first interconnection formed in the first insulating film; 
 a second insulating film formed above the first insulating film with the first interconnection, and including a groove-shaped via-hole having a pattern which is bent at a right angle formed in a region above the first interconnection; and 
 a first conductor material filled in the groove-shaped via-hole, 
 wherein a width at a bent portion of the pattern of the groove-shaped via-hole is smaller than a width at the bent portion of the pattern of the groove-shaped via-hole when the groove-shaped via-hole is bent once at 90°. 
 
     
     
       10. A semiconductor device comprising:
 a first insulating film formed above a substrate; 
 a first interconnection formed in the first insulating film; 
 a second insulating film formed above the first insulating film with the first interconnection; 
 a plurality of groove-shaped via-holes formed in the second insulating film and arranged adjacent to each other, the plurality of groove-shaped via-holes including a first groove-shaped via-hole having a first pattern which has a bent portion with a first angle, and a second groove-shaped via-hole having a second pattern which has a plurality of bent portions with a second angle that is larger than the first angle of the bent portion; and 
 a first conductive layer formed in the first and second groove-shaped via-holes, the first conductive layer connecting to the first interconnection. 
 
     
     
       11. The semiconductor device according to  claim 10 , wherein the first angle is 90°. 
     
     
       12. The semiconductor device according to  claim 11 , wherein the second angle is 135°. 
     
     
       13. The semiconductor device according to  claim 10 , wherein a pattern of the first interconnection is bent in substantially the same way as the second pattern of the second groove-shaped via-hole. 
     
     
       14. The semiconductor device according to  claim 10 , wherein the first interconnection is bent at a right angle. 
     
     
       15. A semiconductor device comprising:
 a substrate; 
 a first insulating film formed above the substrate; 
 a first interconnection formed in the first insulating film; 
 a second insulating film formed above the first insulating film with the first interconnection; 
 a plurality of groove-shaped via-holes formed in the second insulating film and arranged adjacent to each other, the plurality of groove-shaped via-holes including a first groove-shaped via-hole having a first pattern which has a bent portion with a first angle, and a second groove-shaped via-hole having a second pattern which has a plurality of bent portions with a second angle that is larger than the first angle of the bent portion; and 
 a first conductive layer formed in the first and second groove-shaped via-holes, the first conductive layer connecting to the first interconnection, 
 wherein a guard ring comprise the first interconnection and the plurality of groove-shaped via-holes with the first conductive layer. 
 
     
     
       16. The semiconductor device according to  claim 15 , wherein the first angle is 90°. 
     
     
       17. The semiconductor device according to  claim 16 , wherein the second angle is 135°. 
     
     
       18. The semiconductor device according to  claim 15 , wherein a pattern of the first interconnection is bent in substantially the same way as the second pattern of the second groove-shaped via-hole. 
     
     
       19. The semiconductor device according to  claim 15 , wherein the first interconnection is bent at a right angle. 
     
     
       20. A semiconductor device comprising:
 a substrate; 
 a first insulating film formed above the substrate; 
 a first interconnection formed in the first insulating film; 
 a second insulating film formed above the first insulating film and the first interconnection; 
 a plurality of groove-shaped via-holes formed in the second insulating film and arranged adjacent to each other, the plurality of groove-shaped via-holes including a first groove-shaped via-hole having a first pattern which has a bent portion with a first angle, and a second groove-shaped via-hole having a second pattern which has a plurality of bent portions with a second angle that is larger than the first angle of the bent portion; and 
 a first conductive layer formed in the first groove-shaped via-hole and the second groove-shaped via-hole, the first conductive layer connecting to the first interconnection. 
 
     
     
       21. The semiconductor device according to  claim 20 , wherein the first angle is 90°. 
     
     
       22. The semiconductor device according to  claim 20 , wherein the second angle is larger than 90°. 
     
     
       23. The semiconductor device according to  claim 20 , wherein a pattern of the first interconnection is bent in substantially the same way as the second pattern of the second groove-shaped via-hole. 
     
     
       24. The semiconductor device according to  claim 20 , wherein the first interconnection is bent at a right angle. 
     
     
       25. A semiconductor device comprising:
 a first insulating film formed above a substrate; 
 a first interconnection buried in the first insulating film; 
 a second insulating film formed above the first insulating film with the first interconnection; 
 a plurality of groove-shaped via-holes formed in the second insulating film, arranged adjacent to each other in a region above the first interconnection, and including a first groove-shaped via-hole and a second groove-shaped via-hole; and 
 a first conductive layer filled in the groove-shaped via-holes, 
 wherein the first groove-shaped via-hole has a pattern bent with a first angle, the second groove-shaped via-hole has a pattern bent a plurality of times at each angle with a second angle. 
 
     
     
       26. The semiconductor device according to  claim 25 , wherein the first angle is 90°. 
     
     
       27. The semiconductor device according to  claim 25 , wherein the plurality of times are two times. 
     
     
       28. The semiconductor device according to  claim 25 , wherein the second angle is larger than 90°. 
     
     
       29. The semiconductor device according to  claim 25 , wherein a pattern of the first interconnection is bent in substantially the same way as the pattern of the second groove-shaped via-hole. 
     
     
       30. The semiconductor device according to  claim 25 , wherein the first interconnection is bent at a right angle. 
     
     
       31. A semiconductor device comprising:
 a first insulating film formed above a substrate; 
 a first interconnection buried in the first insulating film; 
 a second insulating film formed above the first insulating film with the first interconnection; 
 a plurality of groove-shaped via-holes formed in the second insulating film, arranged adjacent to each other in a region above the first interconnection, and including a first groove-shaped via-hole and a second groove-shaped via-hole; and 
 a first conductive layer filled in the groove-shaped via-holes, and the first conductive layer connecting to the first interconnection. 
 
     
     
       32. The semiconductor device according to  claim 31 , wherein the first angle is 90°. 
     
     
       33. The semiconductor device according to  claim 31 , wherein the second angle is larger than 90°. 
     
     
       34. The semiconductor device according to  claim 31 , wherein a pattern of the first interconnection is bent in substantially the same way as the pattern of the second groove-shaped via-hole. 
     
     
       35. The semiconductor device according to  claim 31 , wherein the first interconnection is bent at a right angle. 
     
     
       36. A semiconductor device comprising:
 a first insulating film formed above a substrate; 
 a first interconnection formed in the first insulating film; 
 a second insulating film formed above the first insulating film with the first interconnection; 
 a plurality of groove-shaped via-holes formed in the second insulating film, arranged adjacent to each other in a region above the first interconnection, and including a first groove-shaped via-hole and a second groove-shaped via-hole; and 
 a first conductive layer filled in the groove-shaped via-holes, and the first conductive layer connecting to the first interconnection, 
 wherein the first groove-shaped via-hole has a pattern bent at a right angle, the second groove-shaped via-hole has a pattern bent twice at each angle with larger than 90° at a bent portion of a guard ring. 
 
     
     
       37. The semiconductor device according to  claim 36 , wherein a pattern of the first interconnection is bent in substantially the same way as the pattern of the second groove-shaped via-hole. 
     
     
       38. The semiconductor device according to  claim 36 , wherein the first interconnection is bent at a right angle. 
     
     
       39. A semiconductor device comprising:
 a substrate; 
 a first insulating film formed above the substrate; 
 a first interconnection formed in the first insulating film; 
 a second insulating film formed above the first insulating film with the first interconnection; 
 a plurality of groove-shaped via-holes formed in the second insulating film and arranged adjacent to each other, the plurality of groove-shaped via-holes including a first groove-shaped via-hole having a first pattern which has a plurality of bent portions with a first angle, and a second groove-shaped via-hole having a second pattern which has a plurality of bent portions with a second angle; and 
 a first conductive layer formed in the first groove-shaped via-hole and the second groove-shaped via-hole, the first conductive layer connecting to the first interconnection. 
 
     
     
       40. The semiconductor device according to  claim 39 , wherein the first angle and the second angle are larger than 90°. 
     
     
       41. The semiconductor device according to  claim 39 , wherein the first angle is substantially the same as the second angle.