Substrate with film and glass for formation film

Abstract

A substrate with film and a glass for forming such a film are provided, wherein the film has high gas barrier property, high transmittance in visible light region, and high productivity since the film provides effective gas barrier property even if the film is a single layer. A substrate with film having an inorganic amorphous film having a softening temperature of from 100 to 800° C. formed on at least one surface of a substrate; or a substrate with film having an inorganic amorphous film having a glass transition temperature of from 50 to 500° C. formed on at least one surface of a substrate. Further, a glass for forming film composed of a borate glass containing B 2 O 3 as the main component, a phosphate glass containing P 2 O 5 , a tellurite type composition containing TeO 2 as the main component, a bismuth oxide type composition containing Bi 2 O 3 as the main component or a chalcogenide type composition containing at least one type of element selected from the group consisting of S, Se and Te.

1. A substrate with film comprising:
 a substrate; and 
 a gas barrier film comprising an inorganic amorphous film and provided on at least one surface of the substrate, 
 wherein the inorganic amorphous film has a softening temperature of from 100 to 800° C. and comprises a phosphate glass containing P 2 O 5 , a content of P 2 O 5  in the phosphate glass is from 5 to 39 mol %, and the inorganic amorphous film has a film thickness of from 0.1 to 5 μm and is formed via a vapor phase. 
 
     
     
       2. A substrate with film comprising:
 a substrate; and 
 a gas barrier film comprising an inorganic amorphous film provided on at least one surface of the substrate, 
 wherein the inorganic amorphous film has a glass transition temperature of from 50 to 500° C. and comprises a phosphate glass containing P 2 O 5 , a content of P 2 O 5  in the phosphate glass is from 5 to 39 mol %, and the inorganic amorphous film has a film thickness of from 0.1 to 5 μm and is formed via a vapor phase. 
 
     
     
       3. The substrate with film according to  claim 1 , wherein every component constituting the inorganic amorphous film has a vapor pressure of at least 1×10 −7  atm (1×10 −2  Pa) at 1,600° C. 
     
     
       4. The substrate with film according to  claim 2 , wherein every component constituting the inorganic amorphous film has a vapor pressure of at least 1×10 −7  atm (1×10 −2  Pa) at 1,600° C. 
     
     
       5. The substrate with film according to  claim 1 , which has a minimum transmittance of at least 65% in a wavelength region of 400 to 700 nm. 
     
     
       6. The substrate with film according to  claim 2 , which has a minimum transmittance of at least 65% in a wavelength region of 400 to 700 nm. 
     
     
       7. The substrate with film according to  claim 1 , wherein the phosphate glass further contains a fluoride. 
     
     
       8. The substrate with film according to  claim 2 , wherein the phosphate glass further contains a fluoride. 
     
     
       9. The substrate with film according to  claim 7 , wherein the content of the fluoride in the inorganic amorphous film is from 1 to 70 mol %. 
     
     
       10. The substrate with film according to  claim 8 , wherein the content of the fluoride in the inorganic amorphous film is from 1 to 70 mol %. 
     
     
       11. The substrate with film according to  claim 7 , wherein the fluoride is SnF 2 . 
     
     
       12. The substrate with film according to  claim 8 , wherein the fluoride is SnF 2 . 
     
     
       13. The substrate with film according to  claim 1 , wherein the phosphate glass further contains SnO. 
     
     
       14. The substrate with film according to  claim 2 , wherein the phosphate glass further contains SnO. 
     
     
       15. The substrate with film according to  claim 13 , wherein the content of the SnO in the inorganic amorphous film is from 1 to 80 mol %. 
     
     
       16. The substrate with film according to  claim 14 , wherein the content of the SnO in the inorganic amorphous film is from 1 to 80 mol %. 
     
     
       17. The substrate with film according to  claim 1 , wherein the inorganic amorphous film has a gas barrier property. 
     
     
       18. The substrate with film according to  claim 2 , wherein the inorganic amorphous film has a gas barrier property. 
     
     
       19. The substrate with film according to  claim 1 , wherein the substrate with film is a sealing substrate. 
     
     
       20. The substrate with film according to  claim 2 , wherein the substrate with film is a sealing substrate.