Electron-assisted deposition process and apparatus

Abstract

Previous limitations in utilizing energetic vapor deposition means are addressed through the introduction of a novel means of vapor deposition, namely, an Electron-Assisted Deposition (EAD) process and apparatus. The EAD mode of film growth disclosed herein is generally achieved by, first, forming a magnetic field that possesses field lines that intersect electrically non-grounded first and second surfaces, wherein at least one surface is a workpiece, thereby forming a magnetic trap between first and second surfaces; second, introducing a high flux of electrons axially into the magnetic field existing between the first and second surfaces, so that the electrons form an electron-saturated space-charge in the space adjacent to the substrate, wherein plasma interactions with the substrate are substantially avoided, and modification of film growth processes is provided predominantly by electron—rather than plasma—bombardment.

1. A vapor deposition apparatus for forming a film on a substrate, comprising:
 a. a vacuum chamber; 
 b. means for positioning a substrate within the chamber, the substrate providing a first surface for forming the film thereon, the first surface electrically floating; 
 c. a second surface, the second surface maintained at a negative potential; 
 d. a vapor source, the vapor source positioned so as to direct a vapor towards the substrate, the vapor containing constituents for forming the film; 
 e. magnetic field assembly means providing a magnetic field, the magnetic field possessing field lines that intersect first and second surfaces, the magnetic field providing containment of electrons; and, 
 f. an electron source, the electron source positioned for providing a flux of electrons centrally into the magnetic field, the flux sufficiently large to provide a negative space-charge adjacent to the first surface, so that a substantial plasma sheath is unable to form at the first surface, the negative space-charge providing a negative potential, V s , to the first surface, wherein acceleration of positive ions toward the first surface by V s  is substantially prevented by the negative space-charge.