Semiconductor integrated circuit and method of processing address and command signals thereof

Abstract

A semiconductor integrated circuit device includes an input unit configured to receive address and command signals, an internal address generator configured to output an internal address signal by adjusting a timing of the input address signal to correspond to a predetermined internal signal processing timing margin, and an internal command generator configured to output an internal command having a predetermined time difference from the internal address signal by adjusting a timing of the input command signal.

1. A semiconductor integrated circuit device, comprising:
 an input unit configured to receive address and command signals; 
 an internal address generator configured to output an internal address signal by adjusting a timing of the input address signal to correspond to a predetermined internal signal processing timing margin; and 
 an internal command generator configured to output an internal command having a predetermined time difference from the internal address signal by adjusting a timing of the input command signal. 
 
     
     
       2. The semiconductor integrated circuit device of  claim 1 , wherein the internal address generator is configured to output the internal address signal by adjusting the timing of the address signal so as to correspond to timing margins corresponding to write latency signal WL and a burst length signal BL during a write operation of the semiconductor integrated circuit device. 
     
     
       3. The semiconductor integrated circuit device of  claim 1 , wherein the internal address generator is configured to output the internal address signal synchronized with a first edge of a clock pulse signal. 
     
     
       4. The semiconductor integrated circuit device of  claim 3 , wherein the internal command generator is configured to output the internal command signal synchronized with a second edge of the clock pulse signal. 
     
     
       5. The semiconductor integrated circuit device of  claim 1 , wherein the internal address generator is configured to output the internal address signal synchronized with a rising edge of a clock pulse signal. 
     
     
       6. The semiconductor integrated circuit of  claim 5 , wherein the internal command generator is configured to output the internal command signal synchronized with a falling edge of the clock pulse signal. 
     
     
       7. The semiconductor integrated circuit device of  claim 1 , wherein the internal command generator is configured to separately adjust the timings of a write command signal and a read command signal among the command signals. 
     
     
       8. The semiconductor integrated circuit device of  claim 1 , wherein the predetermined time difference is one-half of cycle time interval of the clock pulse signal. 
     
     
       9. The semiconductor integrated circuit device of  claim 1 , wherein the internal command generator includes a first timing controller and a second timing controller. 
     
     
       10. The semiconductor integrated circuit device of  claim 9 , wherein the first timing controller includes a plurality of flip-flops connected in series to output internal write command signals at a time later than the internal address signal by a time interval corresponding to one-half of a time interval of a clock pulse signal. 
     
     
       11. The semiconductor integrated circuit device of  claim 9 , wherein the second timing controller includes a plurality of flip-flops connected in series to output internal read command signals at a time later than the internal address signal by a time interval corresponding to one-half of a time interval of a clock pulse signal. 
     
     
       12. A method of processing address and command signals of a semiconductor integrated circuit device, comprising:
 receiving external address signals and external command signals; 
 producing an internal address signal by adjusting a timing of the external address signals to correspond to a predetermined internal signal processing timing margin; and 
 producing an internal command signal having a predetermined time difference from the internal address signal by adjusting the timing of the external command signals. 
 
     
     
       13. The method of  claim 12 , wherein the predetermined internal signal processing timing margin is determined by write latency signal WL and a burst length signal BL during a write operation of the semiconductor integrated circuit device. 
     
     
       14. The method of  claim 12 , wherein the internal address signal is synchronized with a first edge of a clock pulse signal. 
     
     
       15. The method of  claim 14 , wherein the internal command signal is synchronized with a second edge of the clock pulse signal. 
     
     
       16. The method of  claim 12 , wherein the internal address signal is synchronized with a rising edge of a clock pulse signal. 
     
     
       17. The method of  claim 16 , wherein the internal command signal is synchronized with a falling edge of the clock pulse signal. 
     
     
       18. The method of  claim 12 , wherein a timing of the external command signal is separately adjusted with respect to a write command and a read command among the external command signals.