Three-terminal power device with high switching speed and manufacturing process

Abstract

An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a thyristor device and a first insulated-gate switch device connected in series between the first and the second conduction terminals; the first insulated-gate switch device has a gate terminal connected to the control terminal, and the thyristor device has a base terminal. The power device is further provided with: a second insulated-gate switch device, connected between the first current-conduction terminal and the base terminal of the thyristor device, and having a respective gate terminal connected to the control terminal; and a Zener diode, connected between the base terminal of the thyristor device and the second current-conduction terminal so as to enable extraction of current from the base terminal in a given operating condition.

1. A power device, comprising:
 a first current-conduction terminal; 
 a second current-conduction terminal; 
 a control terminal configured to receive a control voltage of said power device; and 
 a thyristor device and a first insulated-gate switch device connected in series between said first and second current-conduction terminals, said first insulated-gate switch device having a gate terminal and having a source/drain terminal, the gate terminal connected to said control terminal, and: 
 a second insulated-gate switch device connected between said first current-conduction terminal and said base terminal of said thyristor device, and having a gate terminal connected to said control terminal; 
 wherein said first insulated-gate switch device is a MOSFET, and said second insulated-gate switch device is an IGBT. 
 
     
     
       2. The device according to  claim 1 , wherein said MOSFET has its drain terminal connected to said thyristor device and its drain/source terminal connected to said second current-conduction terminal, and said IGBT has a collector terminal connected to said first current-conduction terminal and an emitter terminal connected to said base terminal of said thyristor device, said MOSFET and said IGBT having respective channels with the same type of conductivity. 
     
     
       3. The device according to  claim 1 , further comprising a selective-current-conduction element connected between said base terminal of said thyristor device and said second current-conduction terminal, and configured to enable extraction of current from said base terminal of said thyristor device towards said second current-conduction terminal in a given operating condition of said first and second insulated-gate switch devices. 
     
     
       4. The device according to  claim 3 , wherein said selective-current-conduction element is a Zener diode, having its anode terminal connected to said second current-conduction terminal and its cathode terminal connected to said base terminal of said thyristor device. 
     
     
       5. An electronic device, comprising:
 a first terminal; 
 a second terminal; 
 a control terminal; 
 a first switch having a first node coupled to the first terminal, a second node, and a trigger node; 
 a trigger having a first node coupled to the first terminal, a second node coupled to the trigger node of the switch, and a control node coupled to the control terminal; and 
 a second switch having a first node coupled to the second node of the first switch, a second node coupled to the second terminal, and a control node coupled to the control terminal; 
 wherein the trigger comprises an insulated-gate bipolar transistor. 
 
     
     
       6. The electronic device of  claim 5  wherein the first switch comprises a thyristor. 
     
     
       7. The electronic device of  claim 5  wherein the first switch comprises a silicon-controlled rectifier. 
     
     
       8. The electronic device of  claim 5  wherein the second switch comprises a transistor. 
     
     
       9. The electronic device of  claim 5  wherein the second switch comprises an insulated-gate transistor. 
     
     
       10. The electronic device of  claim 5 ,
 further comprising a discharger having a first node coupled to the trigger node of the first switch and a second node coupled to the second terminal. 
 
     
     
       11. The electronic device of  claim 5  wherein the trigger node of the first switch is coupled to the second terminal. 
     
     
       12. The electronic device of  claim 5 , further comprising a discharger having a first node coupled to the trigger node of the first switch and a second node coupled to the control terminal. 
     
     
       13. An electronic device, comprising:
 a first terminal; 
 a second terminal; 
 a control terminal; 
 a first switch having a first node coupled to the first terminal, a second node, and a trigger node; 
 a trigger having a first node coupled to the first terminal, a second node coupled to the trigger node of the switch, and a control node coupled to the control terminal; and 
 a second switch having a first node coupled to the second node of the first switch, a second node coupled to the second terminal, and a control node coupled to the control terminal; 
 the device further comprising a diode coupled between the trigger node of the first switch and the second terminal. 
 
     
     
       14. An electronic device, comprising:
 a first terminal; 
 a second terminal; 
 a control terminal; 
 a first switch having a first node coupled to the first terminal, a second node, and a trigger node; 
 a trigger having a first node coupled to the first terminal, a second node coupled to the trigger node of the switch, and a control node coupled to the control terminal; and 
 a second switch having a first node coupled to the second node of the first switch, a second node coupled to the second terminal, and a control node coupled to the control terminal; 
 the device further comprising a Zener diode having a cathode coupled to the trigger node of the first switch and having an anode coupled to the second terminal. 
 
     
     
       15. An electronic device, comprising:
 a first terminal; 
 a second terminal; 
 a control terminal; 
 a first switch having a first node coupled to the first terminal, a second node, and a trigger node; 
 a discharger having a first node coupled to the trigger node of the switch; and 
 a second switch having a first node coupled to the second node of the first switch, a second node coupled to the second terminal, and a control node coupled to the control terminal; 
 wherein the discharger comprises a diode. 
 
     
     
       16. The electronic device of  claim 15  wherein the first switch comprises a thyristor. 
     
     
       17. The electronic device of  claim 15  wherein the second switch comprises a transistor. 
     
     
       18. The electronic device of  claim 15  wherein the discharger has a second node coupled to the second terminal. 
     
     
       19. The electronic device of  claim 15  wherein the discharger has a second node coupled to the control terminal. 
     
     
       20. The electronic device of  claim 15  wherein the trigger node is coupled to the first terminal. 
     
     
       21. An electronic device, comprising:
 a first terminal; 
 a second terminal; 
 a control terminal; 
 a first switch having a first node coupled to the first terminal, a second node, and a trigger node; 
 a discharger having a first node coupled to the trigger node of the switch; and 
 a second switch having a first node coupled to the second node of the first switch, a second node coupled to the second terminal, and a control node coupled to the control terminal; 
 wherein the discharger comprises a Zener diode. 
 
     
     
       22. A method, comprising:
 generating a triggering signal in response to a control signal having a first state; 
 triggering a thyristor to conduct a current with the triggering signal; 
 closing a switch that is serially coupled to the thyristor in response to the control signal having the first state; and 
 opening the switch in response to the control signal having a second state; 
 wherein generating the triggering signal comprises generating the triggering signal with an insulated-gate bipolar transistor. 
 
     
     
       23. The method of  claim 22 , further comprising discharging the thyristor in response to the control signal having the second state. 
     
     
       24. A method, comprising:
 discharging a thryistor in response to a control signal having a first state; 
 opening a switch that is serially coupled to the thyristor in response to the control signal having the first state; and 
 closing the switch in response to the control signal having a second state; 
 wherein discharging the thyristor comprises discharging the thyristor with a Zener diode. 
 
     
     
       25. The method of  claim 24 , further comprising triggering the thyristor to conduct a current in response to the control signal having the second state.