Sputtering target and process for producing si oxide film therewith

Abstract

A Si sputtering target that in the measurement of crystal face orientation of sputtering surface according to X-ray diffractometry, exhibits a ratio of peak intensity of (111) face (I (111) ) to peak intensity of (220) face (I (220) ) of Si, (I (111) /I (220) ), falling within the range of 1.8±0.3. The Si sputtering target comprises, for example, an Si sintered material of 70 to 95% relative density. With respect to sputtering films such as Si oxide film, the film thickness characteristics, film formation cost, etc. can be improved by the use of this Si sputtering target.

1. A sputtering target consisting essentially of Si,
 wherein the target comprises Si sintered material having a relative density in a range of 70% or more and 95% or less, and 
 wherein a ratio (I (111) /I (220) )of peak intensity (I (111) ) of (111) face to peak intensity (I (220) ) of (220) face of Si is in a range of 1.8±0.3 when a sputtering surface of the target is measured for crystal face orientation by X-ray diffractometry. 
 
     
     
       2. The sputtering target according to  claim 1 , having hardness in a range of Hv 300 or more and Hv 800 or less in terms of Vickers hardness. 
     
     
       3. The sputtering target according to  claim 1 , which is a target for forming an oxide film. 
     
     
       4. The sputtering target according to  claim 1 , which is used as a target for forming an optical thin film. 
     
     
       5. A process for producing an Si oxide film, comprising forming an Si oxide film by sputtering the sputtering target according to  claim 1  in an oxygen-containing atmosphere. 
     
     
       6. The process for producing an Si oxide film according to  claim 5 , wherein the Si oxide film is an optical thin film. 
     
     
       7. The sputtering target according to  claim 1 , wherein the sputtering target has a sintered structure.