Method of manufacturing through-via

Abstract

Disclosed is a method of manufacturing a through-via. The through-via manufacturing method includes forming a core-via hole in a wafer, forming a suction-via hole adjacent to the core-via hole in the wafer, forming a via core in the core-via hole, forming a polymer-via hole connected to the suction-via hole in the wafer, filling the polymer-via hole with polymer solution by creating a vacuum inside the polymer-via hole by drawing air out of the suction-via hole, and polishing the wafer such that the via core formed in the core-via hole is exposed.

1. A method of manufacturing a through-via, the method comprising:
 forming a core-via hole in a wafer; 
 forming a suction-via hole adjacent to the core-via hole in the wafer; 
 forming a via core in the core-via hole; 
 forming a polymer-via hole connected to the suction-via hole in the wafer; 
 filling the polymer-via hole with polymer solution by creating a vacuum inside the polymer-via hole by drawing air out of the suction-via hole; and 
 polishing the wafer such that the via core formed in the core-via hole is exposed. 
 
     
     
       2. The method of  claim 1 , wherein the forming of the core-via hole in the wafer is performed simultaneously with the forming of the suction-via hole in the wafer. 
     
     
       3. The method of  claim 1 , wherein, after the suction-via hole has been formed in the wafer, a metal seed layer is formed on inner surfaces of the core-via hole and the suction-via hole. 
     
     
       4. The method of  claim 1 , wherein the core-via hole has a depth greater than a depth of the suction-via hole. 
     
     
       5. The method of  claim 1 , wherein the filling of the polymer-via hole with the polymer solution comprises:
 dipping a lower portion of the wafer into a container filled with the polymer solution in a state where the wafer is disposed such that the polymer-via hole is opened downward and the suction-via hole is opened upward; 
 filling the polymer solution in the polymer-via hole by removing air inside the suction-via hole and the polymer-via hole in a manner to draw air of the suction-via hole to the outside; and 
 curing the polymer solution. 
 
     
     
       6. The method of  claim 1 , wherein the forming of the core-via hole and the suction-via hole in the wafer comprises:
 forming photoresist on the wafer; 
 performing exposure and development on the photoresist in a state where a mask is disposed on the photoresist and then etching the core-via hole and the suction-via hole; and 
 removing the photoresist on the wafer. 
 
     
     
       7. The method of  claim 6 , wherein the core-via hole has a depth that is proportional to a diameter of the core-via hole. 
     
     
       8. The method of  claim 6 , wherein the suction-via hole has a depth that is proportional to a diameter of the suction-via hole. 
     
     
       9. The method of  claim 6 , wherein, in the removing of the photoresist from the wafer, an upper surface and a lower surface of the wafer are polished such that the core-via hole passes through the wafer. 
     
     
       10. The method of  claim 1 , wherein the forming of the core-via hole and the suction-via hole in the wafer is performed by radiating a laser beam to the wafer. 
     
     
       11. The method of  claim 10 , wherein the core-via hole and the suction-via hole have a depth that is proportional to output power of the laser beam. 
     
     
       12. The method of  claim 1 , wherein the polymer solution includes polymer filler having a resistance ranging from about 10 8  Ωcm to 10 10  Ωcm. 
     
     
       13. The method of  claim 1 , wherein the forming of the via core in the core-via hole comprises:
 blocking one end of the core-via hole by thermally bonding a metal film to one side of the wafer; and 
 filling metal in the core hole. 
 
     
     
       14. The method of  claim 13 , wherein the filling of the metal in the core-via hole comprises plating with at least one selected from the group consisting of tin, copper and gold. 
     
     
       15. The method of  claim 1 , wherein, in the forming of the core-via hole and the suction-via hole, a plurality of suction-via holes are formed around the core-via hole. 
     
     
       16. The method of  claim 14 , wherein the suction-via holes are formed at predetermined angles around the core-via hole while being spaced apart from each other. 
     
     
       17. The method of  claim 1 , further comprising forming a metal coating layer at an inner wall of the polymer-via hole after forming the polymer-via hole connected to the suction-via hole.