Method and solution for forming a patterned ferroelectric layer on a substrate
Abstract
A method for forming a patterned ferroelectric layer, having ferroelectric electronic properties, on a substrate. A composite layer, made of ferroelectric layer producing metal acrylate compounds, a photoinitiator compound and an acrylate crosslinking compound is formed on the substrate. A photomask is formed on the composite layer. Unmasked areas of the composite layer are irradiated with ultraviolet light. A solvent removes non-irradiated areas of the composite layer from the substrate. The patterned composite layer is heated in an oxygen atmosphere to cause a chemical reaction among the ferroelectric layer producing metal acrylate compounds and oxygen, a patterned ferroelectric layer being formed on the substrate.
Claims
exact text as granted — not AI-modified1. A method for forming a patterned ferroelectric layer on a substrate, comprising:
(a) forming a composite layer on a substrate, the composite layer comprising bismuth methacrylate, strontium methacrylate and tantalum dimethacrylate metal acrylate compounds, a photoinitiator compound and an acrylate crosslinking compound;
(b) placing a photomask onto the composite layer, the photomask having areas that are transparent to ultraviolet light;
(c) irradiating the composite layer, through the photomask, with ultraviolet light;
(d) placing a solvent on the irradiated composite layer to remove non-irradiated areas of the composite layer from the substrate, a patterned composite layer being formed on the substrate; and
(e) heating the patterned composite layer in an oxygen atmosphere to cause a chemical reaction among the bismuth methacrylate, strontium methacrylate and tantalum dimethacrylate metal acrylate compounds and oxygen, a patterned ferroelectric layer being formed on the substrate.
2. A method for forming a patterned ferroelectric layer on a substrate, comprising:
(a) depositing a solution onto a substrate, the solution comprising bismuth methacrylate, strontium methacrylate and tantalum dimethacrylate metal acrylate compounds, a photoinitiator compound, an acrylate crosslinking compound and a solvent;
(b) heating the solution and the substrate, to drive solvent from the deposited solution, a composite layer being formed on the substrate;
(c) placing a photomask onto the composite layer, the photomask having areas that are transparent to ultraviolet light;
(d) irradiating the composite layer, through the photomask, with ultraviolet light;
(e) placing a solvent on the irradiated composite layer to remove non-irradiated areas of the composite layer from the substrate, a patterned composite layer being formed on the substrate; and
(f) heating the patterned composite layer in an oxygen atmosphere to cause a chemical reaction among the bismuth methacrylate, strontium methacrylate and tantalum dimethacrylate metal acrylate compounds and oxygen, a patterned ferroelectric layer being formed on the substrate.
3. A method for forming a patterned ferroelectric layer on a substrate, comprising:
(a) depositing a solution onto a substrate, the solution comprising bismuth methacrylate, strontium methacrylate, tantalum dimethacrylate, benzildimethylketal, triethylenglycol dimethacrylate, glyceryl tri-2-ethylhexanoate, and methoxyethoxy alcohol;
(b) heating the solution and the substrate, to drive solvent from the deposited solution, a composite layer being formed on the substrate;
(c) placing a photomask onto the composite layer, the photomask having areas that are transparent to ultraviolet light;
(d) irradiating the composite layer, through the photomask, with ultraviolet light;
(e) placing a solvent on the irradiated composite layer to remove non-irradiated areas of the composite layer from the substrate, a patterned composite layer being formed on the substrate; and
(f) heating the patterned composite layer in an oxygen atmosphere to cause a chemical reaction among the bismuth methacrylate, strontium methacrylate, tantalum dimethacrylate and oxygen, a patterned ferroelectric layer being formed on the substrate.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.