US8012781B2ExpiredUtilityA1

Method for fabricating an electroluminescence device

83
Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Jun 9, 2004Filed: Mar 12, 2010Granted: Sep 6, 2011
Est. expiryJun 9, 2024(expired)· nominal 20-yr term from priority
H10H 20/821H10H 20/813Y10S977/779B82Y 20/00H05B 33/14C09K 11/08B82B 3/00C09K 11/06H10K 50/14H10K 50/115
83
PatentIndex Score
3
Cited by
16
References
11
Claims

Abstract

A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further, a method for fabricating the nanocrystal electroluminescence device.

Claims

exact text as granted — not AI-modified
1. A method for fabricating an electroluminescence device, comprising the steps of:
 patterning a hole-injecting anode on a substrate and forming a polymer hole transport layer thereon; 
 coating a nanocrystal dispersion on the polymer hole transport layer to form a nanocrystal light-emitting layer; 
 forming an organic electron transport layer on the nanocrystal light-emitting layer; and 
 forming an electron-injecting cathode on the organic electron transport layer, 
 wherein the nanocrystal light-emitting layer is formed by dispersing nanocrystals surface-bound by a photosensitive compound in a solvent which does not damage the polymer hole transport layer to obtain a nanocrystal dispersion, and coating the nanocrystal dispersion on the polymer hole transport layer; or dispersing nanocrystals surface-bound by a material containing no photosensitive functional group and a photosensitive compound in a solvent which does not damage the polymer hole transport layer to obtain a nanocrystal dispersion, and coating the nanocrystal dispersion on the polymer hole transport layer. 
 
     
     
       2. The method according to  claim 1 , wherein the nanocrystal light-emitting layer is made of at least one material selected from the group consisting of metal nanocrystals, Group II-VI compound semiconductor nanocrystals, Group III-V compound semiconductor nanocrystals, PbS, PbSe and PbTe, the metal nanocrystals including Au, Ag, Pt, Pd, Co, Cu and Mo, the Group II-IV compound semiconductor nanocrystals including CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe and HgTe, the Group III-V compound semiconductor nanocrystals including GaN, GaP, GaAs, InP and InAs; and when the nanocrystal light-emitting layer is made of a mixture of two or more nanocrystals, the nanocrystals exist in the state of a simple mixture, fused crystals in which the nanocrystals are partially present in the same crystal structure, or an alloy. 
     
     
       3. The method according to  claim 1 , wherein the solvent which does not damage the hole transport layer and disperses the nanocrystals is selected from the group consisting of water, pyridine, ethanol, propanol, butanol, pentanol, hexanol, toluene, chloroform, chlorobenzene, THF, cyclohexane, cyclohexene, methylene chloride, pentane, hexane, heptane, octane, nonane, decane, undecane, dodecane, and mixtures thereof. 
     
     
       4. The method according to  claim 1 , wherein the electron transport layer is formed by spin coating, dip coating, spray coating, or blade coating. 
     
     
       5. The method according to  claim 1 , wherein the nanocrystal dispersion has a concentration of 0.01 wt %˜10 wt %. 
     
     
       6. The method according to  claim 1 , wherein the nanocrystal light-emitting layer has a thickness of 3 nm˜30 nm. 
     
     
       7. The method according to  claim 1 , wherein the polymer hole transport layer is made of a material selected from the group consisting of poly(3,4-ethylenedioxythiophene) (PEDOT)/polystyrene para-sulfonate (PSS), poly-N-vinylcarbazole derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polymethacrylate derivatives, poly(9,9-octylfluorene) derivatives, and poly(spiro-fluorene) derivatives. 
     
     
       8. The method according to  claim 1 , wherein the electron transport layer is formed on the nanocrystal light-emitting layer by thermal deposition, molecular deposition or chemical deposition. 
     
     
       9. The method according to  claim 1 , further comprising the step of exposing the nanocrystal light-emitting layer to UV light to crosslink it, prior to coating the organic electron transporting material on the nanocrystal light-emitting layer. 
     
     
       10. The method according to  claim 1 , wherein the photosensitive compound surface-bound to the nanocrystals contains a double bond, a carboxyl group, an amide group, a phenyl group, a biphenyl group, a peroxide group, an amine group, or an acryl group. 
     
     
       11. The method according to  claim 1 , further comprising the step of inserting a hole injection layer between the anode and the hole transport layer; inserting an electron blocking layer between the nanocrystal light-emitting layer and the hole transport layer; or inserting a hole blocking layer between the nanocrystal light-emitting layer and the electron transport layer.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.