Semiconductor device and method for fabricating semiconductor device

Abstract

A semiconductor device includes a plurality of bit lines repeatedly arranged with a same line width and pitch in a memory device region; a plurality of shunt lines arranged in a same layer as that of the plurality of bit lines, in parallel therewith, and with the same line width and pitch as those of the plurality of bit lines in the memory device region; and an upper-layer contact plug arranged from an upper-layer side so as to be connected to the plurality of shunt lines by extending over two or more shunt lines.

1. A semiconductor device, comprising:
 a plurality of bit lines repeatedly arranged with a same line width and pitch in a memory device region; 
 a plurality of shunt lines arranged in a same layer as that of the plurality of bit lines, in parallel therewith, and with the same line width and pitch as those of the plurality of bit lines in the memory device region; and 
 an upper-layer contact plug arranged from an upper-layer side so as to be connected to the plurality of shunt lines by extending over two or more shunt lines. 
 
     
     
       2. The semiconductor device according to  claim 1 , further comprising:
 a plurality of lower-layer contact plugs for bit lines each arranged so as to be connected to corresponding one of the plurality of bit lines from a lower-layer side by changing an arrangement position alternately regarding a direction in which the plurality of bit lines extends; and 
 a plurality of lower-layer contact plugs for shunt lines each arranged so as to be connected to corresponding one of the plurality of shunt lines from the lower-layer side by changing the arrangement position alternately to successively fit to the arrangement position alternately changed from the side of the plurality of lower-layer contact plugs for bit lines. 
 
     
     
       3. The semiconductor device according to  claim 1 , further comprising a plurality of lower-layer contact plugs for shunt lines arranged so as to be connected to at least one of the plurality of shunt lines from a lower-layer side. 
     
     
       4. The semiconductor device according to  claim 1 , further comprising:
 a first dielectric film arranged on a side surface side of each of the plurality of bit lines; 
 a second dielectric film arranged on the side surface side of each of the plurality of bit lines and on the first dielectric film and which is a film type different from that of the first dielectric film; and 
 a barrier metal film arranged at least in contact with the first dielectric film at the bottom surface of the barrier metal film; 
 wherein the upper-layer contact plug is arranged on the barrier metal film. 
 
     
     
       5. The semiconductor device according to  claim 1 , wherein a thickness of the plurality of shunt lines positioned below the upper-layer contact plug is formed lower than that of the plurality of bit lines. 
     
     
       6. The semiconductor device according to  claim 1 , further comprising a plurality of dummy wires formed in a same layer as that of the plurality of bit lines and in parallel therewith in the memory device region, and arranged with the same line width and pitch as those of the plurality of bit lines and between the plurality of bit lines and the plurality of shunt lines. 
     
     
       7. The semiconductor device according to  claim 1 , further comprising:
 a plurality of lower-layer contact plugs for bit lines each arranged so as to be connected to corresponding one of the plurality of bit lines from a lower-layer side at a same position regarding a direction in which the plurality of bit lines extends; and 
 a lower-layer contact plug for shunt lines arranged so as to be connected to one of the plurality of shunt lines from the lower-layer side with the same line width as that of the plurality of lower-layer contact plugs for bit lines and in the same position as that of the plurality of lower-layer contact plugs for bit lines regarding the direction in which the plurality of bit lines extends. 
 
     
     
       8. The semiconductor device according to  claim 7 , wherein the lower-layer contact plug for shunt lines is arranged adjacent to one of the plurality of lower-layer contact plugs for bit lines with at least a gap of a region in which a plurality of dummy wires is arranged, the region being between the plurality of bit lines and the plurality of shunt lines. 
     
     
       9. The semiconductor device according to  claim 1 , further comprising a lower-layer contact plug for shunt lines arranged so as to be connected to the plurality of shunt lines by extending over two or more shunt lines of the plurality of shunt lines from a lower-layer side. 
     
     
       10. The semiconductor device according to  claim 9 , further comprising:
 a plurality of dummy wires formed in a same layer as that of the plurality of bit lines and in parallel therewith in the memory device region, and arranged with the same line width and pitch as those of the plurality of bit lines and between the plurality of bit lines and the plurality of shunt lines, wherein 
 the lower-layer contact plug for shunt lines is arranged so as to be connected to the plurality of shunt lines by extending over the two or more shunt lines and at least one of the plurality of dummy wires. 
 
     
     
       11. The semiconductor device according to  claim 1 , further comprising:
 a plurality of lower-layer contact plugs for bit lines each arranged so as to be connected to corresponding one of the plurality of bit lines from a lower-layer side at a same position regarding a direction in which the plurality of bit lines extends; and 
 a plurality of lower-layer contact plugs for shunt lines each arranged so as to be connected to corresponding one of the plurality of shunt lines from the lower-layer side with the same line width as that of the plurality of lower-layer contact plugs for bit lines and in the same position as that of the plurality of lower-layer contact plugs for bit lines regarding the direction. 
 
     
     
       12. The semiconductor device according to  claim 11 , further comprising:
 a plurality of dummy wires formed in a same layer as that of the plurality of bit lines and in parallel therewith in the memory device region, and arranged with the same line width and pitch as those of the plurality of bit lines and between the plurality of bit lines and the plurality of shunt lines; and 
 a plurality of lower-layer contact plugs for dummy wires each arranged so as to be connected to corresponding one of the plurality of dummy wires from the lower-layer side with the same line width as that of the plurality of lower-layer contact plugs for bit lines and in the same position as that of the plurality of lower-layer contact plugs for bit lines regarding the direction. 
 
     
     
       13. The semiconductor device according to  claim 1 , further comprising:
 a plurality of dummy wires formed in a same layer as that of the plurality of bit lines and in parallel therewith in the memory device region, and arranged with the same line width and pitch as those of the plurality of bit lines and between the plurality of bit lines and the plurality of shunt lines; 
 a plurality of lower-layer contact plugs for bit lines each arranged so as to be connected to corresponding one of the plurality of bit lines from a lower-layer side by changing an arrangement position alternately regarding a direction in which the plurality of bit lines extends; 
 a plurality of lower-layer contact plugs for dummy wires each arranged so as to be connected to corresponding one of the plurality of dummy wires from the lower-layer side by changing the arrangement position alternately to successively fit to the arrangement position alternately changed from a side of the plurality of lower-layer contact plugs for bit lines; and 
 a plurality of lower-layer contact plugs for shunt lines each arranged so as to be connected to corresponding one of the plurality of shunt lines from the lower-layer side by changing the arrangement position alternately to successively fit to the arrangement position alternately changed from the side of the plurality of lower-layer contact plugs for bit lines. 
 
     
     
       14. The semiconductor device according to  claim 1 , further comprising a plurality of lower-layer contact plugs for shunt lines arranged so as to be connected to one of the plurality of shunt lines from a lower-layer side. 
     
     
       15. The semiconductor device according to  claim 14 , further comprising:
 a plurality of dummy wires formed in a same layer as that of the plurality of bit lines and in parallel therewith in the memory device region, and arranged with the same line width and pitch as those of the plurality of bit lines and between the plurality of bit lines and the plurality of shunt lines; 
 a plurality of lower-layer contact plugs for bit lines each arranged so as to be connected to corresponding one of the plurality of bit lines from a lower-layer side at a same position regarding a direction in which the plurality of bit lines extends; and 
 a plurality of lower-layer contact plugs for dummy wires each arranged so as to be connected to corresponding one of the plurality of dummy wires from the lower-layer side with the same line width as that of the plurality of lower-layer contact plugs for bit lines and in the same position as that of the plurality of lower-layer contact plugs for bit lines regarding the direction. 
 
     
     
       16. The semiconductor device according to  claim 14 , further comprising:
 a dummy wire formed in a same layer as that of the plurality of bit lines and in parallel therewith in the memory device region, and arranged with the same line width and pitch as those of the plurality of bit lines and between the plurality of bit lines and the plurality of shunt lines; and 
 a plurality of lower-layer contact plugs for the dummy wire arranged so as to be connected to the dummy wire from the lower-layer side. 
 
     
     
       17. The semiconductor device according to  claim 1 , further comprising a lower-layer contact plug for shunt lines arranged so as to be connected to one of the plurality of shunt lines from a lower-layer side at a position overlapping with the upper-layer contact plug. 
     
     
       18. The semiconductor device according to  claim 17 , further comprising:
 a plurality of dummy wires formed in a same layer as that of the plurality of bit lines and in parallel therewith in the memory device region, and arranged with the same line width and pitch as those of the plurality of bit lines and between the plurality of bit lines and the plurality of shunt lines; 
 a plurality of lower-layer contact plugs for bit lines each arranged so as to be connected to corresponding one of the plurality of bit lines from a lower-layer side at a same position regarding a direction in which the plurality of bit lines extends; and 
 a plurality of lower-layer contact plugs for dummy wires each arranged so as to be connected to corresponding one of the plurality of dummy wires from the lower-layer side with the same line width as that of the plurality of lower-layer contact plugs for bit lines and in the same position as that of the plurality of lower-layer contact plugs for bit lines regarding the direction. 
 
     
     
       19. The semiconductor device according to  claim 6 , wherein the upper-layer contact plug is arranged so as to be connected to the plurality of shunt lines by extending over the two or more shunt lines and at least one of the plurality of dummy wires. 
     
     
       20. The semiconductor device according to  claim 1 , further comprising:
 a first dielectric film formed on a side surface side of each of the plurality of bit lines and each of the plurality of shunt lines in the memory device region; 
 a plurality of cap films selectively formed on the plurality of shunt lines; and 
 a second dielectric film formed above the first dielectric film and on a side surface side of the upper-layer contact plug, wherein 
 the upper-layer contact plug is arranged so as to embed a portion thereof in the first dielectric film.