Photomask for forming contact hole in semiconductor device

Abstract

Disclosed is a photomask for forming a contact hole arranged on a wafer in a zigzag form along a transverse direction, including: a light transmitting substrate; a main pattern disposed on the light transmitting substrate with a zigzag form as an upper main pattern disposed in a relatively upper portion and a lower main pattern disposed in a relatively lower portion are arranged alternately along a transverse direction; a first lower auxiliary pattern extending in a vertical direction and disposed adjacently to a lower portion of the upper main pattern; a first upper auxiliary pattern extending in a vertical direction and disposed adjacently to an upper portion of the lower main pattern; a second lower auxiliary pattern extending in the transverse direction and connecting the first lower auxiliary patterns with each other; and a second upper auxiliary pattern extending in the transverse direction and connecting the first upper auxiliary patterns with each other.

1. A photomask for forming contact holes arranged on a wafer in a zigzag form along a transverse direction, comprising:
 a light transmitting substrate; 
 a main pattern disposed on the light transmitting substrate with a zigzag form as upper main patterns disposed in a relatively upper portion and lower main patterns disposed in a relatively lower portion are arranged alternately along a transverse direction; 
 first lower auxiliary patterns, each extending in a vertical direction and disposed adjacently to a lower portion of each of the upper main patterns; 
 first upper auxiliary patterns, each extending in a vertical direction and disposed adjacently to an upper portion of each of the lower main patterns; 
 a second lower auxiliary pattern extending in the transverse direction connecting the first lower auxiliary patterns with each other; and 
 a second upper auxiliary pattern extending in the transverse direction and connecting the first upper auxiliary patterns with each other. 
 
     
     
       2. The photomask of  claim 1 , further comprising: a light shielding layer pattern formed on a region of the light transmitting substrate on which the main pattern, the first lower auxiliary patterns, the first upper auxiliary patterns, the second lower auxiliary pattern and the second upper auxiliary pattern are not disposed. 
     
     
       3. The photomask of  claim 1 , further comprising: a phase shift layer pattern formed on a region of the light transmitting substrate on which the main pattern, the first lower auxiliary patterns, the first upper auxiliary patterns, the second lower auxiliary pattern and the second upper auxiliary pattern are not disposed. 
     
     
       4. The photomask of  claim 1 , wherein a critical dimension of each of the first lower auxiliary patterns and the first upper auxiliary patterns is smaller than a critical dimension of the main pattern. 
     
     
       5. The photomask of  claim 1 , further comprising the second lower auxiliary pattern connected to an end of each of the first lower auxiliary patterns that is opposite to an end adjacent to each or the upper main patterns, and the second upper auxiliary pattern connected to an end of each of the first upper auxiliary patterns that is opposite to an end adjacent to each of the lower main patterns. 
     
     
       6. The photomask of  claim 1 , further comprising: a third auxiliary pattern arranged parallel to the second lower auxiliary pattern. 
     
     
       7. The photomask of  claim 6 , further comprising: a fourth auxiliary pattern arranged parallel to the second upper auxiliary pattern.