Method for fabricating light emitting diode chip

Abstract

A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

1. A method of fabricating a light emitting diode chip, comprising:
 forming a semiconductor device layer on a substrate; 
 forming a current spreading layer on a portion of the semiconductor device layer; 
 after forming the current spreading layer, forming a current blocking layer and a passivation layer on a portion of the semiconductor device layer not covered by the current spreading layer; 
 forming a first electrode on the current blocking layer and the current spreading layer; and 
 forming a second electrode on the semiconductor device layer. 
 
     
     
       2. The method of fabricating the light emitting diode chip as claimed in  claim 1 , wherein the method of forming the semiconductor device layer comprises:
 forming a semiconductor layer on the substrate; and 
 patterning the semiconductor layer to form the semiconductor device layer. 
 
     
     
       3. The method of fabricating the light emitting diode chip as claimed in  claim 1 , wherein the method of forming the semiconductor device layer comprises:
 forming a first type semiconductor material layer, a light emitting material layer, and a second type semiconductor material layer sequentially on the substrate; and 
 patterning the second type semiconductor material layer, the light emitting material layer, and the first type semiconductor material layer to form a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer, wherein the light emitting layer is disposed on a portion of the first type semiconductor layer, and the second type semiconductor layer is disposed on the light emitting layer. 
 
     
     
       4. The method of fabricating the light emitting diode chip as claimed in  claim 3 , wherein the method of forming the current spreading layer comprises:
 forming a conductive layer on the second type semiconductor layer; and 
 patterning the conductive layer to form the current spreading layer. 
 
     
     
       5. The method of fabricating the light emitting diode chip as claimed in  claim 4 , wherein the current spreading layer has an opening to expose an upper surface of the second type semiconductor layer, and the current blocking layer contacts with the upper surface of the second type semiconductor layer through the opening. 
     
     
       6. The method of fabricating the light emitting diode chip as claimed in  claim 5 , wherein a contact area of the current blocking layer and the second type semiconductor layer substantially equals to a bottom area of the opening. 
     
     
       7. The method of fabricating the light emitting diode chip as claimed in  claim 5 , wherein the contact area of the current blocking layer and the second type semiconductor layer is substantially smaller than the bottom area of the opening. 
     
     
       8. The method of fabricating the light emitting diode chip as claimed as  claim 7 , wherein a portion of the second type semiconductor layer exposed by the opening but not covered by the current blocking layer, is electrically connected to the first electrode. 
     
     
       9. The method of fabricating the light emitting diode chip as claimed in  claim 1 , wherein the method of forming the current blocking layer and the passivation layer comprises:
 forming a dielectric layer on a portion of the semiconductor device layer not covered by the current spreading layer; and 
 patterning the dielectric layer to form the current blocking layer and the passivation layer simultaneously. 
 
     
     
       10. The method of fabricating the light emitting diode chip as claimed in  claim 9 , wherein a material of the dielectric layer comprises a silicon carbide based material. 
     
     
       11. The method of fabricating the light emitting diode chip as claimed in  claim 10 , wherein the silicon carbide based material comprises SiOxCy: H, SiC, SiCxNy, or SiOxCyNz. 
     
     
       12. The method of fabricating the light emitting diode chip as claimed in  claim 9 , wherein a material of the dielectric layer comprises silicon oxide, silicon nitride, or silicon oxynitride.