Method for manufacturing display device

Abstract

The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.

1. A method for manufacturing a display device comprising the steps of:
 forming an n-channel thin film transistor and a p-channel thin film transistor over a substrate, 
 wherein the method for forming the n-channel thin film transistor and the p-channel thin film transistor comprises: 
 introducing a reactive gas in a reaction chamber; 
 generating plasma in the reaction chamber by superimposing and applying a first high-frequency power having a frequency with a wavelength of equal to or more than 10 m and a second high-frequency power having a frequency with a wavelength of less than 10 m to an electrode in the reaction chamber; and 
 depositing a microcrystalline semiconductor film over the substrate mounted in the reaction chamber, 
 wherein the microcrystalline semiconductor film is included in at least part of channel formation regions of the n-channel thin film transistor and the p-channel thin film transistor. 
 
     
     
       2. A method for manufacturing a display device comprising the steps of:
 forming an n-channel thin film transistor and a p-channel thin film transistor over a substrate, 
 wherein the method for forming the n-channel thin film transistor and the p-channel thin film transistor comprises: 
 introducing a reactive gas in a reaction chamber; 
 generating plasma in the reaction chamber by superimposing and applying a first high-frequency power with a wavelength of equal to or greater than 3 MHz and equal to or less than 30 MHz and a second high-frequency power with a wave length of greater than 30 MHz and equal to or less than 300 MHz to an electrode in the reaction chamber; and 
 depositing a microcrystalline semiconductor film over the substrate mounted in the reaction chamber, 
 wherein the microcrystalline semiconductor film is included in at least part of channel formation regions of the n-channel thin film transistor and the p-channel thin film transistor. 
 
     
     
       3. The method according to  claim 1  further comprising:
 evacuating the reaction chamber lower than 10 −5  Pa before introducing the reactive gas. 
 
     
     
       4. The method according to  claim 1 , wherein a temperature of the substrate during depositing the microcrystalline semiconductor film is equal to or greater than 100° C. and equal to or less than 300° C. 
     
     
       5. The method according to  claim 1 , wherein the plasma is a grow discharge plasma. 
     
     
       6. The method according to  claim 2  further comprising:
 evacuating the reaction chamber lower than 10 −5  Pa before introducing the reactive gas. 
 
     
     
       7. The method according to  claim 2 , wherein a temperature of the substrate during depositing the microcrystalline semiconductor film is equal to or greater than 100° C. and equal to or less than 300° C. 
     
     
       8. The method according to  claim 2 , wherein the plasma is a grow discharge plasma.