P
US8048396B2ExpiredUtilityPatentIndex 72

Method for manufacturing single-walled carbon nanotubes

Assignee: NIKKISO CO LTDPriority: Dec 13, 2004Filed: Dec 12, 2005Granted: Nov 1, 2011
Est. expiryDec 13, 2024(expired)· nominal 20-yr term from priority
Inventors:YUMURA MORIOOHSHIMA SATOSHIYANA JUNZOFUKUMA KAORI
C01B 32/162C01B 2202/30C01B 2202/36Y10S977/843B82Y 30/00B82Y 40/00C01B 2202/06B82B 1/00B82B 3/00C01B 2202/02
72
PatentIndex Score
7
Cited by
13
References
17
Claims

Abstract

The objective of the present invention is to provide a process of producing single-walled carbon nanotubes, capable of producing single-walled carbon nanotubes with high purity. A process of producing single-walled carbon nanotubes according to the present invention includes feeding a feedstock including a hydrocarbon source, a metallocene, and a sulfur compound in a state of mist to a feeding zone where hydrogen gas flows at a linear velocity of 1-50 m/second wherein the amount of the hydrocarbon source is 0.01-0.2% by mass and the amount of the metallocene is 0.001-0.2% by mass based on the total amount of the hydrogen gas and the feedstock, and the amount by mass of the sulfur compound is ⅛-4 times as much as that of the metallocene; and making the hydrogen gas and the fed feedstock flow through a reaction zone with a temperature of 800-1000° C.

Claims

exact text as granted — not AI-modified
1. A process of producing single-walled carbon nanotubes comprising feeding a feedstock including a hydrocarbon source, a metallocene, and a sulfur compound in a state of mist to a feeding zone located between a nozzle end of a feeding nozzle and a reaction zone at a temperature of 200° C. or less where hydrogen gas flows at a linear velocity of 1 to 50 m/second wherein the amount of the hydrocarbon source is from 0.01 to 0.2% by mass and the amount of the metallocene is from 0.001 to 0.2% by mass based on the total amount of the hydrogen gas and the feedstock, and the amount by mass of the sulfur compound is from ⅛ to 4 times as much as that of the metallocene; and, making the hydrogen gas and the fed feedstock flow through the reaction zone at a temperature of 800 to 1000° C. 
     
     
       2. The process of producing single-walled carbon nanotubes according to the  claim 1 , wherein the feeding zone has a temperature from 50 to 200° C. 
     
     
       3. The process of producing single-walled carbon nanotubes according to  claim 1  or  2 , wherein the feedstock passes through the feeding zone in 0.1 to 10 seconds. 
     
     
       4. The process for producing single-walled carbon nanotubes according to  claim 3 , wherein the produced single-walled carbon nanotubes have an average diameter of 0.5 to 2 nm. 
     
     
       5. The process of producing single-walled carbon nanotubes according to  claim 1  or  2 , wherein the produced single-walled carbon nanotubes have an average diameter of 0.5 to 2 nm. 
     
     
       6. The process of producing single-walled nanotubes according to  claim 2 , wherein the feeding zone has a temperature from 80 to 130° C. 
     
     
       7. The process of producing single-walled carbon nanotubes according to  claim 6 , wherein the temperature of the feeding zone gradually rises from a location where the feedstock is supplied to the feeding zone, toward the reaction zone. 
     
     
       8. The process of producing single-walled carbon nanotubes according to  claim 2 , wherein the feeding zone has a temperature which gradually rises from a location where the feedstock is supplied to the feeding zone, toward the reaction zone. 
     
     
       9. The process of producing single-walled carbon nanotubes according to  claim 8 , wherein the feedstock is fed in generally the same direction as the hydrogen gas. 
     
     
       10. The process of producing single-walled carbon nanotubes according to  claim 9 , wherein the feedstock is continuously fed to the feeding zone, thereby continuously producing single-walled carbon nanotubes. 
     
     
       11. The process of producing single-walled carbon nanotubes according to  claim 8 , wherein the feedstock and the hydrogen gas flow downward and generally vertically through the feeding zone and the reaction zone in this order. 
     
     
       12. The process of producing single-walled carbon nanotubes according to  claim 2 , wherein the feedstock is fed in generally the same direction as the hydrogen gas. 
     
     
       13. The process of producing single-walled carbon nanotubes according to  claim 12 , wherein the feedstock is continuously fed to the feeding zone, thereby continuously producing single-walled carbon nanotubes. 
     
     
       14. The process of producing single-walled carbon nanotubes according to  claim 2 , wherein the feedstock and the hydrogen gas flow downward and generally vertically through the feeding zone and the reaction zone in this order. 
     
     
       15. The process of producing single-walled carbon nanotubes according to  claim 1 , wherein the feedstock is fed in generally the same direction as the hydrogen gas. 
     
     
       16. The process of producing single-walled carbon nanotubes according to  claim 15 , wherein the feedstock is continuously fed to the feeding zone, thereby continuously producing single-walled carbon nanotubes. 
     
     
       17. The process of producing single-walled carbon nanotubes according to  claim 1 , wherein the feedstock and the hydrogen gas flow downward and generally vertically through the feeding zone and the reaction zone in this order.

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