Color imaging device and color imaging device manufacturing method

Abstract

A color imaging device includes a semiconductor substrate including a plurality of photoelectric transducers, and a color filter including a plurality of coloring layers provided to associate with the photoelectric transducers of the semiconductor substrate. Each of the coloring layers of the color filter including a side surface that is erected with respect to a surface of the semiconductor substrate, and an inclined surface that is continuous from an end of the side surface located in the opposite side of the semiconductor substrate toward an end portion of the coloring layer located in the opposite side of the semiconductor substrate. The coloring layers are arranged with their side surfaces being in contact with each other without a gap therebetween, and the end portion of the coloring layer has a curved surface shape protruding toward the opposite side of the corresponding photoelectric transducer.

1. A color imaging device comprising:
 a semiconductor substrate including a plurality of photoelectric transducers; and 
 a color filter including a plurality of coloring layers provided to associate with the plurality of photoelectric transducers of the semiconductor substrate, 
 each of the plurality of coloring layers of the color filter including a side surface that is erected with respect to a surface of the semiconductor substrate, and an inclined surface that is continuous from an end of the side surface located in the opposite side of the semiconductor substrate toward an end portion of the coloring layer located in the opposite side of the semiconductor substrate, 
 the plurality of coloring layers being arranged with their side surfaces being in contact with each other without a gap therebetween, and 
 the end portion of the coloring layer having a curved surface shape protruding toward the opposite side of the corresponding photoelectric transducer. 
 
     
     
       2. The color imaging device according to  claim 1 , wherein the plurality of coloring layers include at least one coloring layer having an asymmetrical vertical section. 
     
     
       3. The color imaging device according to  claim 1 , wherein the inclined surface of the coloring layer has a curved surface shape protruding toward the opposite side of the photoelectric transducer corresponding thereto. 
     
     
       4. The color imaging device according to  claim 1 , wherein the side surface of the coloring layer has a height ranging from 0.4 μm to 0.9 μm, and a height from the end of the side surface located in the opposite side of the semiconductor substrate to the end portion of the coloring layer located in the opposite side of the semiconductor substrate is set in a range between 1.8 μm to 0.1 μm. 
     
     
       5. The color imaging device according to  claim 1 , wherein the coloring layer is formed by exposing and developing a color resist layer. 
     
     
       6. The color imaging device according to  claim 5 , wherein the color resist layer is a positive-type color resist layer. 
     
     
       7. The color imaging device according to  claim 1 , wherein an ultraviolet absorbing layer is interposed between the semiconductor layer and the color filter. 
     
     
       8. A color imaging device comprising:
 a semiconductor substrate including a plurality of photoelectric transducers, and a color filter including a plurality of coloring layers provided to associate with the plurality of photoelectric transducers of the semiconductor substrate, 
 each of the plurality of coloring layers of the color filters including a side surface that is erected with respect to a surface of the semiconductor substrate, and an inclined surface that is continuous from an end of the side surface located in the opposite side of the semiconductor substrate toward an end portion of the coloring layer located in the opposite side of the semiconductor substrate, 
 the plurality of coloring layers being arranged with their side surfaces being in contact with each other without a gap therebetween, 
 the end portion of the coloring layer including a flat surface crossing the inclined surface, 
 a microlens of a transparent resin being laminated on the flat surface of the end portion of the coloring layer, and 
 the microlenses laminated on the flat surfaces of the end portions of the two coloring layers adjacent to each other being connected with each other through the transparent resin filling a groove formed between the opposed inclined surfaces of the two coloring layers adjacent to each other. 
 
     
     
       9. The color imaging device according to  claim 8 , wherein the inclined surface of the coloring layer has a curved surface shape protruding toward the opposite side of the photoelectric transducer corresponding thereto. 
     
     
       10. The color imaging device according to  claim 8 , wherein the plurality of microlenses laminated on the flat surfaces of the end portions of the plurality of coloring layers include at least one microlens having an asymmetrical vertical section. 
     
     
       11. The color imaging device according to  claim 8 , wherein the side surface of the coloring layer has a height ranging from 0.4 μm to 0.9 μm, and a height from the end of the side surface located in the opposite side of the semiconductor substrate to the end portion of the coloring layer located in the opposite side of the semiconductor substrate is set in a range between 0.6 μm to 0.1 μm. 
     
     
       12. The color imaging device according to  claim 8 , wherein the coloring layer is formed by exposing and developing a color resist layer. 
     
     
       13. The color imaging device according to  claim 12 , wherein the color resist layer is a positive-type color resist layer. 
     
     
       14. The color imaging device according to  claim 8 , wherein an ultraviolet absorbing layer is interposed between the semiconductor substrate and the color filter.