Magnetic element having a smaller critical dimension of the free layer

Abstract

A magnetic element includes a pinned layer, a nonferromagnetic spacer layer, and a free layer. The nonferromagnetic spacer layer resides between the pinned layer and the free layer. The free layer has a track width of not more than 0.08 micron.

1. A magnetic element comprising:
 a pinned layer; 
 a nonferromagnetic spacer layer; 
 a free layer, the nonferromagnetic spacer layer positioned between the pinned layer and the free layer, the free layer configured to have a track width of not more than 0.08 micron; 
 a stop layer on the free layer; and 
 a dielectric antireflective coating (DARC) layer on the stop layer. 
 
     
     
       2. The magnetic element of  claim 1 , wherein the nonferromagnetic spacer layer is a tunneling barrier layer. 
     
     
       3. The magnetic element of  claim 1 , wherein the nonferromagnetic spacer layer is a conductive layer. 
     
     
       4. The magnetic element of  claim 1 , further comprising a single layer mask on the DARC layer. 
     
     
       5. The magnetic element of  claim 4 , wherein the single layer mask comprises a first width for defining the magnetic element on a first portion of the DARC layer. 
     
     
       6. The magnetic element of  claim 5 , wherein the DARC layer comprises a second width not larger than the first width. 
     
     
       7. The magnetic element of  claim 1 :
 wherein the DARC layer comprises a second width for defining the magnetic element, and 
 wherein the stop layer comprises a third width greater than, or equal to, the second width. 
 
     
     
       8. A transducer comprising:
 a magnetic element having a pinned layer, a free layer, and a nonferromagnetic spacer layer residing between the free layer and the pinned layer, the free layer having a track width of not more than 0.08 micron; 
 a dielectric antireflective coating (DARC) layer on a portion of the magnetic element; 
 an insulating layer on a portion of the DARC layer; 
 a ferromagnetic bias layer on at least a portion of the insulating layer; and 
 a filler layer on at least a portion of the ferromagnetic bias layer. 
 
     
     
       9. The transducer of  claim 8 , wherein the filler layer is a Cr filler layer. 
     
     
       10. The transducer of  claim 8 , wherein the magnetic element further comprises an antiferromagnetic layer, wherein the pinned layer is on the antiferromagnetic layer. 
     
     
       11. The transducer of  claim 8 , wherein the filler layer comprises a material selected from the group consisting of alumina, silicon dioxide, and silicon nitride.