Semiconductor integrated circuit device and method for manufacturing same

Abstract

In a light detector that is a semiconductor integrated circuit, a wiring structure is disposed on a semiconductor substrate along a periphery of a rectangular region that corresponds to a light receiver, and an interlayer insulating film composed of an SOG film is layered over the wiring structure. In this structure, the interlayer insulating film is thicker at a corner than at a center part of the light receiver. In order to increase efficiency of the incidence of light on the light receiver, the planar shape of the open part is formed so that the corners of the rectangle that surrounds the wiring structure are removed when the interlayer insulating film is etched and the open part is formed (i.e., yielding an octagonal shape). Accordingly, the effects of differences in the thickness of the interlayer film at the center part and corners of the light receiver are avoided, a bottom surface of the open part is formed in a flat manner, and uniformity in the incidence of light from the open part to the light receiver is improved.

1. A semiconductor integrated circuit device comprising:
 a light receiver formed on a semiconductor substrate; 
 a wiring structure disposed on the semiconductor substrate along an edge of a planar shape that surrounds the light receiver and has a corner part; 
 an interlayer insulating film formed by an SOG film on the semiconductor substrate and the wiring structure; and 
 an open part formed by etching the interlayer insulating film formed on the light receiver; wherein 
 an edge of the open part is formed on the light receiver at a location where the interlayer insulating film has a flat surface and has a beveled shape from a top view in which a portion that corresponds to the corner part is removed from the planar shape whose outline is formed by the wiring structure. 
 
     
     
       2. The semiconductor integrated circuit device according to  claim 1 , wherein the open part has a polygonal shape in which the corner part has been beveled in a linear fashion. 
     
     
       3. The semiconductor integrated circuit device according to  claim 1 , wherein the open part has a shape in which the corner part has been beveled in a rounded fashion. 
     
     
       4. The semiconductor integrated circuit device of  claim 3 , wherein the open part has a sidewall, the sidewall of the open part forming substantially a right angle with the light receiver. 
     
     
       5. A method for manufacturing a semiconductor integrated circuit device on a semiconductor substrate provided with a light receiver, comprising the steps of:
 forming a wiring structure on the semiconductor substrate along a planar edge that surrounds the light receiver and has a corner part; 
 spin coating an SOG film onto the semiconductor substrate and wiring structure and forming an interlayer insulating film; and 
 etching the interlayer insulating film formed on the light receiver at a location where the interlayer insulating film has a flat surface and forming an open part; wherein 
 an edge of the open part is formed into a beveled shape from a top view in which a portion that corresponds to the corner part is removed from the planar shape whose outline is formed by the wiring structure. 
 
     
     
       6. The method for manufacturing a semiconductor integrated circuit device according to  claim 5 , wherein the open part has a polygonal shape in which the corner part has been beveled in a linear fashion. 
     
     
       7. The method for manufacturing a semiconductor integrated circuit device according to  claim 5 , wherein the open part has a shape in which the corner part has been beveled in a rounded fashion.