Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same

Abstract

In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.

1. An image sensor comprising:
 a first image pickup element, and 
 a second image pickup element, wherein 
 each of said first and second image pickup elements comprises
 a first photoelectric conversion element, 
 a second photoelectric conversion element, 
 a first transferring transistor, one terminal of which is connected to said first photoelectric conversion element, 
 a second transferring transistor, one terminal of which is connected to said second photoelectric conversion element, 
 a reset transistor, one terminal of which is connected to another terminal of said first transferring transistor and another terminal of said second transferring transistor, and 
 an amplifying transistor, a control terminal of which is connected to said another terminal of said first transferring transistor and said another terminal of said second transferring transistor, wherein 
 
 said first photoelectric conversion elements of said first and second image pickup elements are arranged along a first direction, wherein 
 each of said second photoelectric conversion elements is arranged along a second direction relative to each of said first photoelectric conversion elements in the same image pickup element, and wherein 
 a first portion of an interconnection layer between said another terminal of said first transferring transistor and said control terminal of said amplifying transistor is arranged along said second direction to a first side of said second photoelectric conversion element in said first image pickup element, a second portion being the same material as said first portion is arranged along said second direction to a first side of said first photoelectric conversion element in said first image pickup element. 
 
     
     
       2. The image sensor according to  claim 1 , wherein
 said first portion is formed by polysilicon. 
 
     
     
       3. The image sensor according to  claim 1 , wherein
 a length of each of said first and second photoelectric conversion elements in said second direction is shorter than that of each of said first and second photoelectric conversion elements in said first direction. 
 
     
     
       4. The image sensor according to  claim 1 , wherein
 a length of each of said reset transistors in said second direction is shorter than that of each of said reset transistors in said first direction, and wherein 
 a length of each of said amplifying transistors in said second direction is shorter than that of each of said amplifying transistors in said first direction. 
 
     
     
       5. The image sensor according to  claim 4 , wherein
 a length of each control gate of said reset transistors in said second direction is longer than that of each control gate of said reset transistors in said first direction, and wherein 
 a length of each control gate of said amplifying transistors in said second direction is longer than that of each control gate of said amplifying transistors in said first direction.