Plasma display device
Abstract
There is provided a plasma display panel device using phosphors to improve reliability and color reproductivity or color performance. A plasma display panel includes: a discharge gas for generating ultraviolet light as a result of electric discharge, and a phosphor layer containing a phosphor for emitting light as a result of excitation by the ultraviolet light, in which the phosphor contains an Eu activated silicate phosphor added with at least one element selected from Al, Ga, Y and Gd, represented by the following General Formula (1): M13-yM2Si2O8:Euy (1) wherein M1 is at least one element selected from the group consisting of Ba, Ca, and Sr; M2 is at least one element selected from the group consisting of Mg and Zn; and y satisfies the condition of 0.001≰y≰0.2.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A plasma display device comprising:
a pair of substrates arranged at a distance so as to face each other;
barrier ribs arranged between the pair of substrates, for defining a space between the pair of substrates;
an electrode pair arranged on at least one of facing sides of the pair of substrates;
a discharge gas sealed in the space defined by the barrier ribs, for generating ultraviolet light as a result of electric discharge upon application of a voltage to the electrode pair; and
a phosphor layer containing a phosphor for emitting light as a result of excitation by the ultraviolet light, formed on at least one of the facing sides of the pair of substrates and wall surfaces of the barrier ribs in the space,
wherein the phosphor contains an Eu activated silicate phosphor added with at least one element selected from a group consisting of Al, Ga, Y and Gd, represented by the following General Formula (1):
M1 3-y M2Si 2 O 8 :Eu y (1)
where M1 is at least one element selected from the group consisting of Ba, Ca, and Sr; M2 is at least one element selected from the group consisting of Mg and Zn; and y satisfies the condition of 0.001≦y≦0.2,
wherein a lattice structure of the phosphor is tetrahedron structures of SiO 4 .
2. The plasma display device according to claim 1 , wherein at least one element selected from the group consisting of Al, Ga, Y, and Gd is added at an amount less than 0.2 mol to a total of 1 mol of the phosphor.
3. The plasma display device according to claim 2 , wherein the phosphor obtains Al by reacting with at least one compound selected from the group consisting of Al 2 O 3 , AIF 3 , AIN, Al(OH) 3 and (CH 3 COO) 3 Al used as a starting material.
4. The plasma display device according to claim 2 , wherein at least one element selected from the group consisting of Al, Ga, Y, and Gd is filled into an octahedron gap between the SiO 4 tetrahedron structures, or is a substitute for a constituent element of the lattice.
5. The plasma display device according to claim 1 , wherein the phosphor contains the Eu activated silicate phosphor represented by the General Formula (2) and at least one element selected from the group consisting of Al, Ga, Y, and Gd added at an amount less than 0.2 mol to a total of 1 mol of the phosphor:
(Ba z M3 1-z ) 3-y M2Si 2 O 8 :Eu y (2)
wherein M3 is at least one element selected from the group consisting of Ca and Sr; M2 is at least one element selected from the group consisting of Mg and Zn; and z satisfies the condition of 0≦z≦0.3.
6. The plasma display device according to claim 5 , wherein the phosphor obtains Al by reacting with at least one compound selected from the group consisting of Al 2 O 3 , AIF 3 , AIN, Al(OH) 3 and (CH 3 COO) 3 Al used as a starting material.
7. The plasma display device according to claim 3 , wherein at least one element selected from the group consisting of Al, Ga, Y, and Gd is filled into an octahedron gap between the SiO 4 tetrahedron structures, or is a substitute for a constituent element of the lattice.
8. The plasma display device according to claim 1 , wherein the phosphor contains the Eu activated silicate phosphor represented by the General Formula (3) and at least one element selected from the group consisting of Al, Ga, Y, and Gd:
(Ba x Sr 1-x ) 3-y MgSi 2 O 8 :Eu y (3)
where x satisfies the condition of 0<≦0.3.
9. The plasma display device according to claim 8 , wherein Al is added at an amount less than 0.2 mol to a total of 1 mol of the phosphor.
10. The plasma display device according to claim 9 , wherein Al is added at an amount not larger than 0.11 mol to a total of 1 mol of the phosphor.
11. The plasma display device according to claim 8 , wherein the phosphor is an Eu activated silicate phosphor represented by the General Formula (4):
(Ba x Sr 1-x ) 3-y Mg 1-a Al a+b Si 2-b O 8 :Eu y (4)
where a and b satisfy the conditions of 0≦a, 0≦b and 0<a+b<0.2, respectively.
12. The plasma display device according to claim 11 , wherein a and b satisfy the condition of 0<a+b≦0.11.
13. The plasma display device according to claim 8 , wherein the phosphor obtains Al by reacting with at least one compound selected from the group consisting of Al 2 O 3 , AIF 3 , AIN, AI(OH) 3 and (CH 3 COO) 3 Al used as a starting material.
14. The plasma display device according to claim 8 , wherein at least one element selected from the group consisting of Al, Ga, Y, and Gd is filled into an octahedron gap between the SiO 4 tetrahedron structures, or is a substitute for a constituent element of the lattice.
15. The plasma display device according to claim 1 , wherein the phosphor obtains Al by reacting with at least one compound selected from the group consisting of Al 2 O 3 , AlF 3 , AIN, Al(OH) 3 and (CH 3 COO) 3 Al used as a starting material.
16. The plasma display device according to claim 1 , wherein the discharge gas contains Xe in a mole fraction of 6% or more.
17. The device of claim 16 , wherein the discharge gas contains Xe in a mole fraction of 10% or more.
18. The plasma display device according to claim 17 , wherein the discharge gas contains Xe in a mole fraction of 12% or more.
19. The plasma display device according to claim 1 , wherein at least one element selected from the group consisting of Ai, Ga, Y, and Gd is filled into an octahedron gap between the SiO 4 tetrahedron structures, or is a substitute for a constituent element of the lattice.Cited by (0)
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