Wireless chip

Abstract

The invention provides a wireless chip which can secure the safety of consumers while being small in size, favorable in communication property, and inexpensive, and the invention also provides an application thereof. Further, the invention provides a wireless chip which can be recycled after being used for managing the manufacture, circulation, and retail. A wireless chip includes a layer including a semiconductor element, and an antenna. The antenna includes a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer, and has a spherical shape, an ovoid shape, an oval spherical shape like a go stone, an oval spherical shape like a rugby ball, or a disc shape, or has a cylindrical shape or a polygonal prism shape in which an outer edge portion thereof has a curved surface.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a conductive layer serving as an antenna; and 
 a semiconductor element electrically connected to the conductive layer, 
 wherein the conductive layer has a first region, a second region and a third region between the first region and the second region, 
 wherein the conductive layer is bent so that a surface of the first region is parallel to a normal direction of the third region, and a surface of the second region is parallel to the normal direction of the third region, and 
 wherein at least a part of the semiconductor element is surrounded by the first region, the second region and the third region. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein the conductive layer comprises at least one selected from the group consisting of gold, silver, copper, palladium, platinum and aluminum. 
     
     
       3. The semiconductor device according to  claim 1  further comprises an insulator surrounded by the first region, the second region and the third region. 
     
     
       4. The semiconductor device according to  claim 3 , wherein the semiconductor element is surrounded by the insulator. 
     
     
       5. A semiconductor device comprising:
 a first conductive layer; 
 a second conductive layer; 
 a third conductive layer, wherein the first conductive layer, the second conductive layer and the third conductive layer serve as an antenna; and 
 a semiconductor element electrically connected to at least one of the first conductive layer, the second conductive layer and the third conductive layer, 
 wherein the first conductive layer has a first region, a second region and a third region between the first region and the second region, 
 wherein the first conductive layer is bent so that a surface of the first region is parallel to a normal direction of the third region, and a surface of the second region is parallel to the normal direction of the third region, 
 wherein at least a part of the second conductive layer is aligned with the first region of the first conductive layer, 
 wherein at least a part of the third conductive layer is aligned with the second region of the first conductive layer, and 
 wherein at least a part of the semiconductor element is surrounded by the first region, the second region and the third region. 
 
     
     
       6. The semiconductor device according to  claim 5 , wherein at least one of the first conductive layer, the second conductive layer and the third conductive layer comprises at least one selected from the group consisting of gold, silver, copper, palladium, platinum and aluminum. 
     
     
       7. The semiconductor device according to  claim 5  further comprises an insulator surrounded by the first region, the second region and the third region. 
     
     
       8. The semiconductor device according to  claim 7 , wherein the semiconductor element is surrounded by the insulator. 
     
     
       9. A semiconductor device comprising:
 a conductive layer serving as an antenna; and 
 a semiconductor element electrically connected to the conductive layer, 
 wherein the conductive layer has a first region, a second region and a third region between the first region and the second region, 
 wherein the conductive layer is bent so that a surface of the first region is parallel to a normal direction of the third region, and a surface of the second region is parallel to the normal direction of the third region, 
 wherein the semiconductor element includes a transistor and a memory portion, and 
 wherein at least a part of the semiconductor element is surrounded by the first region, the second region and the third region. 
 
     
     
       10. The semiconductor device according to  claim 9 , wherein the semiconductor element further comprises a power source circuit portion. 
     
     
       11. The semiconductor device according to  claim 9 , wherein the transistor includes a gate electrode and a sidewall on a side surface of the gate electrode. 
     
     
       12. The semiconductor device according to  claim 9 , wherein the conductive layer comprises at least one selected from the group consisting of gold, silver, copper, palladium, platinum and aluminum. 
     
     
       13. The semiconductor device according to  claim 9  further comprises an insulator surrounded by the first region, the second region and the third region. 
     
     
       14. The semiconductor device according to  claim 13 , wherein the semiconductor element is surrounded by the insulator.