Semiconductor device, method of fabricating semiconductor device, and semiconductor device layout method

Abstract

There is provided a semiconductor device including: logic circuit elements disposed within a specific region in respective functional blocks of a logic circuit having a plurality of the functional blocks provided one for each functional unit; and a decoupling capacitor disposed in a region within each of the functional blocks at which no logic circuit element is disposed.

What is claimed is: 
     
       1. A semiconductor device comprising:
 logic circuit elements disposed within a specific region in respective functional blocks of a logic circuit having a plurality of the functional blocks provided one for each functional unit; and 
 a decoupling capacitor disposed in a region within each of the functional blocks at which no logic circuit element is disposed, 
 wherein the functional blocks are partitioned along a first direction into a PMOS region where P-type MOS elements are disposed as the logic circuit elements, and an NMOS region where N-type MOS elements are disposed as the logic circuit elements, and the P-type MOS elements and the N-type MOS elements are disposed so as to face each other along a second direction orthogonal to the first direction, 
 wherein the decoupling capacitor is formed by a gate electrode and an impurity region facing the gate electrode, and a P-type MOS capacitor is disposed in the PMOS region, and an N-type MOS capacitor is disposed in the NMOS region, 
 wherein, in a facing portion of the P-type MOS capacitor to an impurity region of one of the P-type MOS elements, the gate electrode constituting the P-type MOS capacitor is formed so as to project out further to the P-type MOS element side than the impurity region facing the gate electrode, 
 wherein, in a facing portion of the P-type MOS capacitor to the gate electrode of the P-type MOS element, the impurity region facing the gate electrode constituting the P-type MOS capacitor is formed so as to project out further to the P-type MOS element side than the gate electrode, 
 wherein, in a facing portion of the N-type MOS capacitor to an impurity region of one of the N-type MOS elements, the gate electrode constituting the N-type MOS capacitor is formed so as to project out further to the N-type MOS element side than the impurity region facing the gate electrode, and 
 wherein, in a facing portion of the N-type MOS capacitor to the gate electrode of the N-type MOS element, the impurity region facing the gate electrode constituting the N-type MOS capacitor is formed so as to project out further to the N-type MOS element side than the gate electrode. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the decoupling capacitor is shaped to correspond to an outline contour of the logic circuit elements, shaped to correspond to an outline contour designating the region of each of the functional blocks, or shaped with a portion corresponding to the outline contour of the logic circuit elements and a portion corresponding to the outline contour of the region of each of tile functional blocks. 
     
     
       3. The semiconductor device of  claim 1 , wherein a plurality of the P-type MOS elements of a plurality of sizes are disposed in the PMOS region, and a plurality of the N-type MOS elements of a plurality of sizes are disposed in the NMOS region. 
     
     
       4. The semiconductor device of  claim 1 , wherein a ground line and a power source line extend along the first direction over the PMOS region and over the NMOS region, respectively, and the decoupling capacitor is connected to the ground line and to the power source line over each of the corresponding regions.